| Budget Amount *help |
¥7,700,000 (Direct Cost: ¥7,700,000)
Fiscal Year 1985: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1984: ¥6,300,000 (Direct Cost: ¥6,300,000)
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| Research Abstract |
A number of crystals consisting of multi-component oxides for electrical applications have been successfully grown by the xenon arc image floating zone method, e.g. the <Y_2> <O_3> -Zr <O_2> and the <Sm_2> <O_3> -Zr <O_2> solid solutions, BaTi <O_3> , CaTi <O_3> , La doped SrTi <O_3> and Yb doped SrCe <O_3> perovskite-related compounds, Lanthanoid sesquioxides ( <Yb_2> <O_3> , <Er_2> <O_3> , etc) and ruby (Cr doped <Al_2> <O_3> ). The following techniques associated with obtaining higher quality-controlled crystals have been developped; (1) the modification of the mechanical parts of the arc-image furnace for the feasible control of the growth rate and rotation of feed and seed crystals, (2) the direct observation of the crystal under growth, (3) the process of cutting, grinding and polishing crystals, (4) the computer-aided systems to determine the crystallographic orientation from the back-reflection Laue photographs, and (5) the estimation of the crystalline imperfection by the X-ray topography and the chemical etching coupled with the SEM analysis. The microstructure of the crystals has been investigated by AEM, SEM, EPMA, XRD etc, and discussed in relation to the measured electrical and mechanical properties.
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