| Co-Investigator(Kenkyū-buntansha) |
YOSHIDA MASAYUKI PROFESSOR, KYUSHU INSTITUTE OF DESIGN, 共通専門教室, 教授 (80038984)
NANNICHI YASUO PROFESSOR, DEPARTMENT OF MATERIALS ENGINEERING, THE UNIVERSITY OF TSUKUBA, 物質工学系, 教授 (10133026)
UMENO MASATAKA PROFESSOR, FACULTY OF ENGINEERING, OSAKA UNIVERSITY, 工学部, 教授 (50029071)
MIKOSHIBA NOBUO PROFESSOR, RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION, TOHOKU UNIVERSITY, 電気通信研究所, 教授 (70006279)
TAKEUCHI SHIN PROFESSOR, THE INSTITUTE FOR SOLID STATE PHYSICS, THE UNIVERSITY OF TOKYO, 物性研究所, 教授 (60013512)
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| Budget Amount *help |
¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 1986: ¥3,800,000 (Direct Cost: ¥3,800,000)
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| Research Abstract |
FOLLOWING PROBLEMS HAVE BEEN INVESTIGATED AND NEW RESULTS ARE OBTAINED :
1. ELECTRONIC STATES OF DISLOCATIONS AND DEFORMATION-INDUCED DEFECTS ;
(1) ELECTRONIC STATES ORIGINATING FROM ATOMIC STRUCTURE CHARACTERISTIC OF DISLOCATION, (2) EVALUATION OF THE ENERGY OF DISLOCATION CORE BY BOND-ORBITAL METHOD, (3) METALLIC CONDUCTION ALONG DISLOCATION IN SmS, (4) SHALLOW LEVELS ASSOCIATED WITH DEFORMATION-INDUCED DEFECTS.
2. DISLOCATION DYNAMICS ;
(1) PHONON SCATTERING DUE TO DISLOCATIONS, (2) ELEMENTARY PROCESS OF DISLOCATION MOTION AND EXPERIMENTAL VERIFICATION, (3) INTERACTION OF DISLOCATIONS WITH VARIOUS KINDS OF IMPURITIES IN GaAs, (4) EFFECT OF DEFECTS ON BRITTLE FRACTURE OF Si, (5) EFFECT OF INTERACTION BETWEEN DISLOCATIONS AND LIGHT-INDUCED REACTION PRODUCTS ON PLASTICITY IN ORGANIC SEMICONDUCTORS.
3. DEFECTS INDUCED BY IRRADIATION OR QUENCHING FROM HIGH TEMPERATURE ;
(1) FORMATION PROCESSES OF POINT DEFECT CLUSTERS IN Si, Ge AND GaAs, (2) EFFECT OF <gamma> -RAY IRRADIATION ON PHOTOLUMINESCENCE IN SUPERLATTICE OF AlAs AND GaAs, (3) OPTICAL PROPERTIES OF INTRINSIC DEFECTS AND THEIR COMPLEXES IN <II> - <VI> COMPOUNDS, (4) ELECTRONIC LEVELS OF DEFECTS INDUCED BY QUENCHING FROM HIGH TEMPERATURE .
4. IMPURITY-RELATED DEFECTS ;
(1) FORMATION PROCESS OF OXYGEN DONORS IN Si AND Ge, (2) NITROGEN-OXYGEN COMPLEXES AS SHALLOW DONORS AND THEIR FORMATION PROCESSES IN Si, (3) RELAXATION PROCESS OF NITROGEN DOPED IN SURFACE LAYER OF Si, (4) INTRODUCTION AND RECOVERY PROCESSES OF IMPURITY GOLD IN Si, (5) FEFECT OF IMPURITIES ON PRECIPITATION OF OXIDES IN Si.
5. DEFECT PROPERTIES AND CHARACTERIZATION TECHNIQUES ;
(1) CHARACTERIZATION AND ATOMIC STRUCTURE OF EL2 DEFECTS IN GaAs, (2) EFFECT OF ARSENIC PRESSURE ON ANNEALING PROCESS IN ION-IMPLANTED GaAs, (3) DEFECT CHARACTERIZATION IN GaAs BY PHOTOLUMINESCENCE, (4) DEFECT CHARACTERIZATION IN SEMICONDUCTORS BY PHOTO-THERMAL RADIATION TECHNIQUE, (5) DEFECT CHARACTERIZATION IN GaAs BY IMPROVED TSC.
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