The Development of High Power Microwave Tube Using LASER and Photocathode for applying Ultra High Energy LINIAC.
| Project/Area Number |
60460014
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
核・宇宙線・素粒子
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| Research Institution | Research Institute of Electronics, Shizuoka University. |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SHIDARA Tetsuo 高エネルギー物理学研究所, 助手 (50132684)
NOMURA Takashi 静岡大学, 電子工学研究所, 助手 (90172816)
HAGINO Minoru 静岡大学, 電子工学研究所, 教授 (90022128)
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| Project Period (FY) |
1985 – 1986
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| Project Status |
Completed (Fiscal Year 1986)
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| Budget Amount *help |
¥7,600,000 (Direct Cost: ¥7,600,000)
Fiscal Year 1986: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1985: ¥6,000,000 (Direct Cost: ¥6,000,000)
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| Keywords | Photocathode / NEA-GaAs / LASERTRON / Life-time test / accelelator / アルミ系の材料 |
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| Research Abstract |
We construct two type of test system. The one is for testing the effect of the high electric field on the lifetime and sensitivity of NEA photo-cathode. The another is for establishing the technique to make a NEA-GaAs photocathode having large area, high sensitivity, and long lifetime.
The system is also test the effect of Aluminum materials on the NEA-photocathode. This material is not poisoned on the photocathode compared to the conventional stainless-steel vacuum system.
Surface cleaning of GaAs are done by the heating in ultra-high vacuum using electron bombarding and resistive heating from the outside of vacuum.
Final sensitivity of photocathode is strongly affected by the process of preparing the GaAs crystals, but it can controlled.
The surface become low sensitivity is recovered by the adsorption of Cs only, and its lifetime is more longer than initial it.
We find one problem that we can re-cleaning the surface by heating over 650oC, but sensitivity after the activation become lower than initial surface. It may occur from the evaporation of p-dopant of Zn from the surface, we are studying to solve this problem.
We are rearranging one system for the diode testing and RF generation. Several ampere of electron beams can be emitted from the NEA-GaAs photo-cathode.
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Report
(1 results)
Research Products
(8 results)
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[Publications] Y.Fukushima, T.Kamei, H.Matsumoto, H.Mizuno, I.Sato, T.Shidara, T.Shintake, K.Takata, Y.Kato, H.Kuroda, N.Nakano, H.Nishimura, M.Miyao, M.Mutoh, M.Yoshioka, S.Takeda: "LASERTRON, a new type of RF source using photoemission triggerd by pulsed LASER beam." Nuclear Instruments and Methods in Physics Research.A238. 215-219 (1985)
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Publications] Y.Fukushima, T.Kamei, H.Matsumoto,, I.Sato, H.Mizuno T.Shidara, T.Shintake, K.Takata, M.Yoshioka, M.Mutoh, H.Kuroda, N.Nakano, H.Nishimura, M.Miyao, S.Takeda Y.Kato: "LASERTRON, a photocathode microwave device switched by LASER." IEEE Transaction, Nuclear Science.NS-32. 2831-2833 (1985)
Description
「研究成果報告書概要(欧文)」より
Related Report
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