Development of Znse Blue Light Emitting Devices by Metalorganic Molecular Beam Epitaxy(MOMBE)
| Project/Area Number |
60460060
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Chiba University |
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Principal Investigator |
KASAI Haruo Faculty of Engineering,Chiba University, 工学部, 教授 (00009226)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAGA Shigeki Faculty of Engineering,Chiba Universty, 工学部, 助手 (90158080)
YOSHIKAWA Akihiko Faculty of Engineering,Chiba University, 工学部, 助教授 (20016603)
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| Project Period (FY) |
1985 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥7,600,000 (Direct Cost: ¥7,600,000)
Fiscal Year 1987: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1986: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1985: ¥3,800,000 (Direct Cost: ¥3,800,000)
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| Keywords | Metalorganic Molecular Beam Epitaxy / Growth of ZnSe Films / Growth Kinetics Cracking / Blue light Emitting Devices / II-VI Compounds / II-V1化合物 / 表面モフォロジー / 化合物半導体 / 【II】-【VI】族化合物半導体 / セレン化亜鉛 / 分子線エピタキシー / MOCVD / MOMBE |
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| Research Abstract |
ZnSe, which is one of the most promising semiconductors for blue light-emitting-diodes, has been grown by Metalorganic Molecular Beam Epitaxy(MOMBE) using Dimethylzinc (DMZn) and H_2Seas reactans.In MOMBE, since the filmsu are grown at low temperature in a clean atmosphere,growth of very high-quality crystals can be expected.Furthermore,sinceZnSe films are grown under high-vaccum condition,"premature reaction"in gas-phase,that is one of the serious problem in conventional MOCVD,can be avoidable in MOMBE.We have investigated MOMBE growth of ZnSe and obtained several important results as followings,
1.The MOMBE system developed in this work has a turbo-molecular-pump and l sccm Mass-Flow-Control-ler in order to achieve the growth under high-vaccum condition.Furthermore,it has a quadru-pole mass spectometer(QMS)and cracking cells.
2.Pyrolysis of source-gases in the cracking cell has been examind by using QMS.It was found that DMZn and H_2Se completely dissociate into Zn and Se_2 at cracking temperature of 860゜C and 680゜C,resperctively.
3.Growth kinetics of ZnSe films has been studied through investigating the effects of sourcegas cracking on the growth rates of the films.It was shown that the cracking of source-gases drastically affects both the growth kinetics and surface morphology of the films.
4.When the source gases are cracked,very smooth and featureless surface can be achieved in MOMBE.Furthermore, through the examinations of low-temperature photoluminescence properties it was found that relatively high-quality ZnSe films can be obtained.
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Report
(2 results)
Research Products
(16 results)
