| Project/Area Number |
60460063
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Osaka University |
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Principal Investigator |
KOBAYASHI Takeshi Faculty of Engineering Science, Osaka University, 基礎工学部, 助教授 (80153617)
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| Co-Investigator(Kenkyū-buntansha) |
FUJIWARA Yasufumi Faculty of Engineering Science, Osaka University, 基礎工学部, 助手 (10181421)
KITA Sadamu Faculty of Engineering Science, Osaka University, 基礎工学部, 助手 (10029449)
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| Project Period (FY) |
1985 – 1986
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| Project Status |
Completed (Fiscal Year 1986)
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| Budget Amount *help |
¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1986: ¥3,000,000 (Direct Cost: ¥3,000,000)
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| Keywords | hot-electron transistor / superconductor / 金属-半導体積層構造 / ヘテロエピタキシャル / プラズマクリーニング |
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| Research Abstract |
In the present research project, a new hot-electron transistor consisting of the superconductor base has been proposed and developed. The related new technologies ecessary for producing the new transistor have been built-up.
The new transistor, hereafter referred to as the Super-Het, is a kind of the ultimate high-speed and high-frequency device. In our preliminary experiment, a Super-Het was fabricated with GaAs-Nb-InSb ternary layers. It showed a pretty good I-V characteristics, being very close to the computor simulation results, at least in its dc behaviors.
The Nb/GaAs heteroepitaxial growth has been performed. The hydrogen plasma cleaning and the interrupted electron-beam deposition substantially helped the epitaxy of Nb on GaAs and AlGaAs substrates. These techniques promise the realization of the excellent Super-HET in near future.
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