| Project/Area Number |
60460121
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
UMENO Masayoshi Nagoya Institute of Technology, 工学部, 教授 (90023077)
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| Co-Investigator(Kenkyū-buntansha) |
SOGA Tetsuo Nagoya Institute of Technology, 工学部, 助手 (20197007)
SAKAI Shiro Nagoya Institute of Technology, 工学部, 助手 (20135411)
JIMBO Takashi Nagoya Institute of Technology, 工学部, 助教授 (80093087)
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| Project Period (FY) |
1985 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥7,000,000 (Direct Cost: ¥7,000,000)
Fiscal Year 1987: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1986: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1985: ¥5,400,000 (Direct Cost: ¥5,400,000)
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| Keywords | MOCVD / LPE / Hybrid growth / Si substrate / InP / GaAs Strained layer superlattice / レーザ / GaAsPLED / 混晶半導体 / 可視光レーザ |
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| Research Abstract |
1.GaAs and GaAsP are grown on Si with the intermediate layers of GaP, GaP/GaAsP strained layer superlattice (SLS) and GaAsP/GaAs SLS. AlGaAs/GaAs lasers are fabricated on Si and the threshold current is as low as 110mA at room temperature pulse conditions.Visible GaAs_<0.6>P_<0.4> LED's are fabricated on Si.The optimum intermediate layer structure between Si and InP is InP/ (InP/InGaP)SLS/(InGaP/GaP)SLS/GaP/Si.InP is grown on Si by MOCVD.
2.InGaAsP is grown on GaAsP by LPE and InGaAsP lasers are fabricated on GaAsP substrate.
3.InGaAsP is grown on MOCVD-grown GaAsP/Si by LPE.However,the crystal quality is poor because the dislocation density of GaAsP/Si is larger than that of GaAsP substrate.
4.(MOCVD-LPE)hybrid growth will produce the high quality optical devices on Si by reducing the dislocation density in the MOCVD-grown epi-layer on Si.
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