| Project/Area Number |
60460231
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
結晶学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
HASHIZUME Hiroo Tokyo Institute of Technology, Associate Professor, 工業材料研究所, 助教授 (10011123)
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| Co-Investigator(Kenkyū-buntansha) |
TANAKA Kiyoaki Tokyo Institute of Technology, Research Associate, 工業材料研究所, 助手 (00092560)
MINATO Ichiro Tokyo Institute of Technology, Research Associate, 工業材料研究所, 助手 (50114898)
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| Project Period (FY) |
1985 – 1986
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| Project Status |
Completed (Fiscal Year 1986)
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| Budget Amount *help |
¥6,200,000 (Direct Cost: ¥6,200,000)
Fiscal Year 1986: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1985: ¥5,700,000 (Direct Cost: ¥5,700,000)
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| Keywords | Mixed Fluoride / Thin Film / X-Ray Diffraction / Standing Wave / 構造解析 / 格子準整合形弗化物混晶 / エピタキシー結晶の界面原子構造 / 表面X線定在波法 / 微小入射角X線回折 |
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| Research Abstract |
The atomic structure of a single-crystal Ca_xSr_<1-x>F_2 (x = 0.43) film grown on GaAs(111)B surface has been determined with the X-ray standing-wave technique. A new method has been applied which allows complete analysis of mismatched structures using a single specimen. (Ca, Sr) atoms at the interface are found seven-coordinated, supporting the previously proposed growth model of epitaxial cubic fluoride films. The atomic layer spacing across the interface is contracted by 0.37 <Ang> compared with that calculated from the bulk bond lengths. The film is strained in such a way that the (111) interplanar distance is contracted by 0.28 %, although bulk mixed fluoride exactly lattice matches GaAs at room temperature, The study is based on a theoretical re-investigation of the standing-wave position with respect to atomic planes in absorbing non-centrosymmetric crystals.
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