Photon-Induced Redox Reactions in Amorphous Materials
Project/Area Number |
60470070
|
Research Category |
Grant-in-Aid for General Scientific Research (B)
|
Allocation Type | Single-year Grants |
Research Field |
無機工業化学
|
Research Institution | Tokyo Institute of Technology |
Principal Investigator |
KAWAZOE Hiroshi Department of Inorganic Materials, Tokyo Institute of Technology, 工学部, 助教授 (80087288)
|
Co-Investigator(Kenkyū-buntansha) |
INOUE Satoru Department of Inorganic Materials, Tokyo Institute of Technology, 工学部, 助手 (70111648)
|
Project Period (FY) |
1985 – 1986
|
Project Status |
Completed (Fiscal Year 1986)
|
Budget Amount *help |
¥7,500,000 (Direct Cost: ¥7,500,000)
Fiscal Year 1986: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1985: ¥6,800,000 (Direct Cost: ¥6,800,000)
|
Keywords | Optical waveguides / ESR / Photo-Luminescence / 正孔捕獲中心 / フォトルミネフセンス / ESR |
Research Abstract |
Thermal decomposition reaction of <TO_2> (T=Sior Ge) melts at high temperature and photon-induced redox reactions related to Ge or P in <SiO_2> glasses were studied by use of ESR, Raman scattering, optical absorption and photo-luminescence. A model reaction was proposed which can totally explain formation of the defects detected in <SiO_2> or <SiO_2> : <GeO_2> glasses. They are E', NBOHC, T-T homobonds, peroxy linkages (or O-O homobonds) and T O or T( <II> ) species. The initial reaction is radical decompositionof T-O bonds at high temperatures and the defects are product of secondary reactions between the initial radical species. The net reaction is expressed as <2TO_2> 2TO+ <O_2> , Which predicts the dependence of concentration of the radical species on <pO_2> during glass preparation. Germanium traps an electron upon low temperature-irradiation of the glasses with -ray and the positive hole is trapped on an oxygen. This is similar to the results for the phosphorus-doped glasses.
|
Report
(1 results)
Research Products
(11 results)