| Project/Area Number |
60550008
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Shizuoka University |
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Principal Investigator |
FUJIYASU Hiroshi Faculty of Engineering, Shizuoka University, 工学部, 教授 (60022232)
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| Co-Investigator(Kenkyū-buntansha) |
桑原 弘 静岡大学, 工業短期大学部, 教授 (60022141)
KUWABARA Hiroshi College of Engineering, Shizuoka University (60022232)
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| Project Period (FY) |
1985 – 1986
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| Project Status |
Completed (Fiscal Year 1986)
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| Budget Amount *help |
¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1986: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1985: ¥600,000 (Direct Cost: ¥600,000)
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| Keywords | II-VI compound semiconductor / Quantum well / Semiconductor superlattice / ZnSe / ZnSSe / フォトルミネッセンス / ラマン散乱 / X線回折 |
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| Research Abstract |
ZnSSeTe II-VI semiconductors are useful materials for light emitting devices. In this study ZnSe-ZnSSe and ZnTe-ZnSSe superlattices(SLs) were prepared on the GaAs(100) by hot wall epitaxy(HWE), using the Flip-Flop ( growth- interruption) method invented by us. (ZnSe-ZnSSe SLs): <ZnS_(1-X)> Se mixed crystals(x: 0 0.3) have been succeeded in making. Resolved X-ray satellite patterns(RXSPs) have been observed for the ZnSe-ZnSSe Sls. For the ZnSe-ZnS SL the photo luminescence(PL) photon energy was analyzed using the Harrison's data for the band offset, taking into account the strain effect on the band gap of the material and on the band offset. Good agreement in between the experimental and theoretical resuls was obtained with the conduction band offset <DELTA> <E_C> = 0.1 eV. (ZnTe-ZnSSe SL): The RXSPs were observed for the ZnTe(170 <ang> )-ZnSe(10 <ang> ) SL, even though the lattice mismatch is 7 %. PL from the band gap of the SL has been for the first time observed in the case using HeCd laser excitor. The similar PL was observed for the resonance Raman measurement.h <upsilon_(PL)S> were analyzed for the various kind of the SLs and the SLs were found to be type <I> . The inter diffusion was found to be very small from the Raman measurement for the ZnTe(5 <ang> )-ZnSe(5 <ang> ) SL. For the ZnTe-ZnS SLs many satellites were observed in the X-ray measurement, even though the lattice mismatch is 13 %. Folding modes were observed for their Raman measurements. The experimental results show HWE using the Flip-Flop method is good for the preparation of the II-VI semiconductor SLs.
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