Project/Area Number |
60550014
|
Research Category |
Grant-in-Aid for General Scientific Research (C)
|
Allocation Type | Single-year Grants |
Research Field |
Applied materials
|
Research Institution | Kanazawa Institute of Technology |
Principal Investigator |
MINAMI Tadatsugu Kanazawa Institute of Technology, Associate Professor, 工学部, 助教授 (70113032)
|
Co-Investigator(Kenkyū-buntansha) |
TAKATA Shinzo Kanazawa Institute of Technology, Professor, 工学部, 教授 (70064467)
NANTO Hidehito Kanazawa Institute of Technology, Associate Professor, 工学部, 助教授 (30133466)
|
Project Period (FY) |
1985 – 1987
|
Project Status |
Completed (Fiscal Year 1988)
|
Budget Amount *help |
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1987: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1986: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1985: ¥1,100,000 (Direct Cost: ¥1,100,000)
|
Keywords | conducting transparent film / zinc oxide / indium tin oxide / tin oxide / magnetron sputtering / transparent electrode |
Research Abstract |
At present, indium tin oxide (ITO) and tin oxide (TO) films have been widely used as transparent electrodes for display devices, transparent touch-switchs and solar cells. It has been also required to prepare a transparent conducting thin film with a sheet resistance below 1 / . It is generally known that the visible transmittance is reduced with decreasing the resistivity for transparent conducting thin films with the resistivity of the order of 10^<-4> cm. However, the theoretical relationship between electrical properties and optical properties of transparent conducting thin films are still poorly understood. The purpose of this reseach project is to investigate the detail of the electrical and optical properties of various transparent conducting thin films, and to realize films with a low-sheet resistance below 1 / . Furthermore, the problem in the pratical use of transparent conducting thin films is also solved. In order to realize ITO, TO and impurity-doped ZnO films with the lowest resistivity, we prepared these films using rf magnetron sputtering in plasma foucsing magnetic field. Detailed measurements of electrical and optical properties were carried out for these films under various conditions, and then the theoretical relationship between these properties was discussed. As the method to obtain the sheet resistance below 1 / , the transparent conducting thin films with multilayer structures is also discussed.
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