| Project/Area Number |
60550230
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
電子材料工学
|
|---|
| Research Institution | Nagoya Institute of Technology |
|---|
Principal Investigator |
USAMI Akira Department of Electrical and Computer Engineering Nagoya Institute of Technology, 工学部, 助手 (90024265)
|
|---|
| Project Period (FY) |
1985 – 1986
|
| Project Status |
Completed (Fiscal Year 1986)
|
| Budget Amount *help |
¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1986: ¥400,000 (Direct Cost: ¥400,000)
|
|---|
| Keywords | LBIC / non-contact and non-destructiue method / Light-Induced-Diffusion / S・I-GaAs |
|---|
| Research Abstract |
Impurity-doped films were deposited on to the wafers by spin-on, CVD and/or vacumm evaporation. Phosphorus-doped films for front surface and the boron-doped films for back surface on to the p-type silicon wafers. To fabricate the BSF ( <n^+pp^+> -type) silicon solar cells, spin-on deposited wafers were heated with incoherent light radiation from halogenlamps. The advantage of this method in the rapid-thermal-processing (several second order) comparing to the ordinary ion-implantation and/or the impurity diffusion processec. In this study, optimum light-induced-diffusion (LID) conditions for fabrication of high efficiency LID silicon soler cells have been developed. To examine the indepth profiles of carrier and impurity, Hall effects and SIMS measurements were performed. Impurity diffusion processes of LID are depend on the heating temperature and the heating rates. Polycrystalline silicon and the GaAsP alloy semiconductor are also used as for the starting substrates. Conversion efficiency of the GaAsP solar cells is about 10% (AM 1). LID processes are also applid to the Te diffusion for the SI-GaAs. Carrier indepth profiles were measured by the electrochemical C-V profiler.
|
