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Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devices

Research Project

Project/Area Number 61460071
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionThe Institute of Physical and Chemical Research

Principal Investigator

AOYAGI Yoshinobu  The Institute of Physical and Chemical Research, レーザー分子加工グループ・副主任研 (70087469)

Co-Investigator(Kenkyū-buntansha) MEGURO Takashi  The Institute of Physical and Chemical Research, レーザー科学研究グループ, 研究員補 (20182149)
DOI Atsutoshi  The Institute of Physical and Chemical Research, 国際フロンティア研究システム, 研究員
SEGAWA Yusaburo  The Institute of Physical and Chemical Research, レーザー科学研究グループ, 研究員 (30087473)
IWAI Sohachi  The Institute of Physical and Chemical Research, レーザー科学研究グループ, 研究員 (40087474)
Project Period (FY) 1986 – 1987
Project Status Completed (Fiscal Year 1987)
Budget Amount *help
¥6,300,000 (Direct Cost: ¥6,300,000)
Fiscal Year 1987: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1986: ¥4,500,000 (Direct Cost: ¥4,500,000)
KeywordsMOVPE / Ar^+ laser / 有機金属 / アルコンイオンレーザ / レーザーMOCV / ALE / 原子層エピタキシー / パターン化結晶成長
Research Abstract

The laser defined epitaxial growth of GaAs using meetalorganic compounds as source gases has been investigated for the purpose of its application on the new optoelectric devices structure. We have obtained results as follows;
I) The enhancement of the growth fate of GaAs by the Ar^+ laser irradiation during the epitaxial growth was caused from the surface photochemical reaction of alkylgallium.
II) The laser-assisted atomic layer epitaxy (laser-ALE) and the strict structural control of the epitaxial layers have been also studied. It is clarified that the photochemical "site-selective decomposition" process of metalorganic compounds at the As-terminated surface due to the absorption band broadening of adsorbed alkylgallium is the main mechanism for the laser-ALE.
III) We have proposed the unified growth model which was based upon the rate equations for the dissociation of alkylgallium at the growing surface. This model well explains with results both of the conventional and the pulsed MOVPE.
IV) The applications of the laser-ALE for the device fabrication technology was also discussed. We have successfuly realized the GaAs/ALAs multiquantum well (MQW) structure and the direct patterned growth with the Ar^+ laser scanning.

Report

(2 results)
  • 1987 Final Research Report Summary
  • 1986 Annual Research Report
  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] Atsutoshi Doi;Yoshinobu Aoyagi;Susumu Namba: Materials Research Society Symposia Proceedings. 75. 217 (1987)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Yoshinobu Aoyagi;Atsutoshi Doi;Souhachi Iwai;Susumu Namba: Journal of Vacuum Science and Technology. B5. 1460-1464 (1987)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Jun-ichi Kusano;Yusasburo Segawa;Sohachi Iwai;Yoshinobu Aoyagi;Susumu Namba: Journal of Applied Physics. 62. 1376-1380 (1987)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Jun-ichi Kusano;Yusasburo Segawa;Yoshinobu Aoyagi;Susumu Namba: Applied Physics Letters. 52. 67-68 (1987)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Yoshinobu Aoyagi;Atsutoshi Doi;Takashi Meguro;Sohachi Iwai;Susumu Namba: Journal of Electrochemcal Society.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Takashi Meguro;Takeshi Suzuki;Akira Hirata;Kouichi Ozaki;Yasuhiro Yamamoto;Souhachi Iwai;Yoshinobu Aoyagi;Susumu Namba: Journal of Crystal Growth.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Atsutoshi Doi, Yoshinobu Aoyagi and Susumu Namba: "Stepwise monolayer growth of GaAs by switched laser metalorganic vapor-phase epitaxy" Material Research Society symposia Proceedings. 75. 217- (1987)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Yoshinobu Aoyagi, Atsutoshi Doi, Sohachi Iwai and Susumu Namba: "Atomic-layer growth of GaAs by modulated-continuous-wave laser metalorganic vaspor-phase epitaxy" Journal of Vacuum Science and Technology. B5. 1460-1464 (1987)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Jun-ichi Kusano, Yusaburo Segawa, Sohachi Iwai, Yoshinobu Aoyagi, and Susumu Namba: "Optical characterizations of undoped GaAs crystals grown by reduced pressure metalorganic vaporpahse epitaxy" Journal of Applied Physilcs. 62. 1376-1380 (1987)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Jun-ichi Kusanom, Yusaburo Segawa, Yoshinobu Aoyagi and Susumu Namba: "Laser irradiation effects on photoluminescence spectra of undoped GaAs grown by metalorganic vaporphase epitaxy" Applied Physics Letters. 52. 67-68 (1987)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Thkashi Meguro, Takeshi Suzuki, Akira Hirata, Kouich Ozaki, Yasuhiro Yamamoto, Sohach Iwai, Yoshinobu Aoyagi, and Susumu Namba: "Sourface processes in laser-atomic layer epitaxy (laser-ALE) of GaAs" Journal of Crystal Growth. to be publishoo.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Atsutoshi Doi;Yoshinobu Aoyagi;Susumu Namba: Applied Physics Letters. 48. 1787-1789 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] Atsutoshi Doi;Yoshinobu Aoyagi;Susumu Namba: Applied Physics Letters. 49. 785-787 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] Yoshinobu Aoyagi;Manabu Kanazawa;Atsutoshi Doi;Sohachi lwai;Susumu Namba: Journal of Applied Physics. 60. 3131-3135 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] Yoshinobu Aoyagi;Atsutoshi Doi;Sohachi lwai;SuSumu Namba: Journal of Vacuum Science and Technology. (1987)

    • Related Report
      1986 Annual Research Report

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Published: 1987-03-31   Modified: 2016-04-21  

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