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Research on Dynamics of Two-dimensional Carriers in Ultrathin semiconductor Heterostructure Devices

Research Project

Project/Area Number 61460122
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionUniversity of Tokyo

Principal Investigator

SAKAKI Hiroyuki  (Professor) Institute of Industrial Science, university of Tokyo, 生産技術研究所, 教授 (90013226)

Co-Investigator(Kenkyū-buntansha) ARAKAWA Yasuhiko  (Associate Professor) Institute of Industrial Science University of Tokyo, 生産技術研究所, 助教授 (30134638)
HAMASAKI Joji  (Professor) Institute of Science, University of Tokyo (BABA,Hiroshi), 生産技術研究所, 教授 (00013079)
Project Period (FY) 1986 – 1987
Project Status Completed (Fiscal Year 1987)
Budget Amount *help
¥6,800,000 (Direct Cost: ¥6,800,000)
Fiscal Year 1987: ¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 1986: ¥3,600,000 (Direct Cost: ¥3,600,000)
Keywordsuantum Well Laser / Resonant Tunneling Diode / High-electron-mobility Transistor / Two-dimensional Electron / Radiative Recombination Coefficient / Tunneling Escape Rate / Phonon Emission / 飽和速度 / 量子井戸レーザ
Research Abstract

Dynaics of carriers in quantum wells ( Ws) and related hetero- structures (HS) are the key factor that dominates the performances of various quatntum HS devices; in this project, we investigate dynamics in W lasers, resonant tunneling diodes (RTD), and HSFETs.
(1) Recombination dynamics in Ws: Although a controversy exists as to the relative roles of excitons and free carriers in Ws, the radiative recombination in W lasers may well be dominated by the free carrier process, since excitons are quenched under a high excitation condition. The lifetime of such free carriers is determined by using picosecond laser pulse and found to be well explained by the theory of band-to-band transition.
(2) Tunneling dynamics in RTDs: Since electrons tunneling through double-barrier RTDs involves the multiple reflection, it may lead to an intrinsic time delay. We have successfully measured this delay for the first time and nave shown that this delay is well explained by the theory.
(3) Acceleration dynamics in HSFETs: The velocity-field relationship of electrons is established for HEMT and other HSFETs and key mechamisms for velocity saturation are disclosed. Implementation of thie finding to HEMT device modeling has shown the importance of low field mobility for the achievement of high gm and high drain current.

Report

(2 results)
  • 1987 Final Research Report Summary
  • 1986 Annual Research Report
  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] K. Hirakawa: Applid Physics Letters. 49. 889-891 (1986)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] K. Yokoyama: IEEE Electron Device Letters. EDL-8. 73-75 (1987)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] M. Tsuchiya: Physical Review Letters. 59. 2356-2359 (1987)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] K. Hirakawa: Journal of Applied Physics.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] H. Sakaki: IEEE Electron Device Letters.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] T. Matsusue: Applied Physics Letters. 50. 1429-1431 (1987)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] K. Hirakawa: "Energy relaxation of two-dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctions" Applied Physics Letters. 49. 889-891 (1986)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] K. Yokoyama: "Importance of low-field drift velocity characteristics for HEMT modeling" IEEE Electron Device Letters. EDL-8. 73-75 (1987)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] M. Tsuchiya: "Tunneling escape rate of electrons from quantum well in double barrier heterostructures" Physical Review Letters. 59. 2356-2359 (1987)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] K. Hirakawa: "Hot-electron transport in selectively doped n-type AlGaAs/GaAs heterojunctions" Journal of Applied Physics.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] H. Sakaki: "Roles of low field mobility and its carrier-concentration dependence in high electron mobility transistors and other field effect transistors" IEEE Electron Device Letters.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] T. Matsusue: "Radiative recombination coefficient of free carriers in GaAs-AlGaAs quantum wells and its dependence on temperature" Applied Physics Letters. 50. 1429-1431 (1987)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Kazuhiko Hirakawa;Hiroyuki Sakaki: Physical Review B. Vol.33No.12. 8291-8303 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] Kazuhiko Hirakawa;Hiroyuki Sakai: APPl.Phys.lett.Vol.49no.14. 889-891 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] H.Uchiki;T.Kobayashi;Y.Arakawa;H.Sakaki: Surface Science 174. 174. 272-277 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] Toshio Matsusue;Hiroyuki Sakai: APPl.Phys.Lett.(1987)

    • Related Report
      1986 Annual Research Report

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Published: 1987-03-31   Modified: 2016-04-21  

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