| Project/Area Number |
61460124
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
NAKAMURA Tetsuro Toyohashi University of Technology, 工学部, 教授 (00126939)
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| Co-Investigator(Kenkyū-buntansha) |
NAMIKI Akira Toyohashi University of Techonology, 工学部, 助教授 (40126941)
ISHIDA Makoto Toyohashi University of Technolgy, 工学部, 助教授 (30126924)
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| Project Period (FY) |
1986 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥6,500,000 (Direct Cost: ¥6,500,000)
Fiscal Year 1987: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1986: ¥5,500,000 (Direct Cost: ¥5,500,000)
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| Keywords | epitaxial growth of Al_2O_3 films / Gas Source MBE / Ultra-Violet irradiation / silicon substrate / X線光電子分光法 / 絶縁膜 / 超高真空 / XPS分析 |
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| Research Abstract |
In order to grow epitaxially insulator films (Al_2O_3) on Si substrates, absorption of Al(CH_3)_3 and N_2O gases and reaction between Si surface and the gases were investigated using X-ray photoelectron spectroscopy (XPS). It was found that TMA adsorption on Si clean surface at room temperature was physical adsorption, and that SiC layers were formed at the interface by annealing at 600゜C. To keep away from this phenomenon, it is very useful to cover the Si surface with a few atomic layers of oxide. From these results, epitaxial growth of Al_2O_3 films was sudied by four kinds of method : Solid phase epitaxy, laser CVD, MO-MBE, and LP-CVD. We succeeded in epitaxial growth of Al_2O_3 films on Si substrates using MO- MBE, and LP-CVD methods. Heteroepitaxial growth by MO-MBE method was performed onto (100) and (111) Si substrates at growth temperatures between 720゜C and 800゜C, in the case of LP-CVD, the growth temperature was 1000゜C. The epitaxial films had a structure of <gamma>-Al_2O_3, and the oientation relationships of (100) <gamma>-Al_2O_3/(100)Si and (111) <gamma>- Al_2O_3/(111)Si. The lattice mismatch was 2.4%, which was smaller than that of Si on Sapphire (<gamma>-Al_2O_3).
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