| Project/Area Number |
61460126
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Hosei University |
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Principal Investigator |
HARA Tohru Dipartment of Electrical Engineering. Professor, 工学部, 教授 (00147886)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAMOTO Yashhiro Ion Beam Technology Laboratory, Associae Professor, イオンビーム工学研究所, 助教授 (50139383)
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| Project Period (FY) |
1986 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥7,000,000 (Direct Cost: ¥7,000,000)
Fiscal Year 1987: ¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 1986: ¥4,600,000 (Direct Cost: ¥4,600,000)
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| Keywords | Silicide / Ion implantation / Gate / Interconnection / Ohmic contact / 不純物プロファイル / デンキョク / イオンチュウニュウ / フジュンブツブンプ |
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| Research Abstract |
Ion imlantation in silicides and metals is an important process technology in MOS LSI's. Impurity concentration profiles of ion implantation in tungsten silicide with different compositions and metalS deposited by sputtering and chemical vapor diposition (CVD) were measured by Rutherford back scattering spectometry (RBS)and others.
Impurity concentration profile in CVD tungsten silicide can be described by Gaussian distribution and profile tailing is not so evident. In sputtered W film, however, profile tailing occurs markedly. The tailing can be suprresed in CVD W film.
when annealing of the ion implanted WSIx are performed. precipitation of the impurity ocurs rapidly together with excess Si from the Si rich silicide through the grain boundary of silicide.
Out-diffusion of impurity takes place rapidly when capless annealing is done. Details of these impurity profiles are studied.
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