Development of Ceramics/metal Multiple Layered Films with High Strength and Ductility
| Project/Area Number |
61460205
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
金属材料(含表面処理・腐食防食)
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| Research Institution | Osaka University |
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Principal Investigator |
KAWABE Hideaki Faculty of Engineering, Osaka University, 工学部, 教授 (90028978)
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| Co-Investigator(Kenkyū-buntansha) |
YASUTAKE Kiyoshi Faculty of Engineering, Osaka University, 工学部, 助手 (80166503)
YOSHII Kumayasu Faculty of Engineering, Osaka University, 工学部, 助教授 (30029152)
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| Project Period (FY) |
1986 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥6,300,000 (Direct Cost: ¥6,300,000)
Fiscal Year 1987: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1986: ¥5,300,000 (Direct Cost: ¥5,300,000)
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| Keywords | Ceramics / metal multiple layered films / Ion beam sputtering device / Atomic structures of amorphous silicon carbide films / Interfacial reactions of Al / 非晶質炭化ケイ素多層膜の界面反応 / イオンビームスパッター蒸着 / 多層薄膜 / 金属 / アモルファス薄膜界面 / 界面反応 / アモルファス炭化ケイ素 |
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| Research Abstract |
The purpose of the present work is to dvelope the multiple layer films composed of ceramics and metal films, having new mechanical and physical properties. In order to fabricate such a layer film, ion beam sputtering device was developed, in which some designs have been made to meet the requirements that the specimens can be prepared in high vacuum and that the deposition can be carried out with the atomic order. Silicon carbide films and alminium/silicon carbide multiple layer films were deposited by the ion beam sputtering and r.f. magnetron sputtering devices, and their atomic structures were studied. The results obtained are as follows.
1. Silicon carbide films were made on (001) Si wafer substrates at the temperatures below 573 K, and they had amorphous structures (a-Si_<1-x>C_x). It is shown from IR measurements, X-ray diffraction and transmision electron diffraction that C atoms are distributed uniformly in the films, and that the coordination number of C atoms is four-fold in the C mole fraction range of O<equal or less than>X<equal or less than>0.5.
2. The positions of halo peaks observed in RHEED profiles for a-Si_<0.5>C_<0.5> (a-Sic) films differ from those observed in X-ray and transmission electron diffraction profiles. From a comparison of these data it can be considered that distance between the nearest neighbor atoms at the surface is longer than that in the film, and also from the distorted micro-crystalline model it is suggested that the structure in th surface layer is more distorted than in the film.
3. Reflection electron diffraction and Auger electron spectroscopy of a-SiC/Al/a-Sic triple layer films found that some thin reaction layer might exist at the Al/a-SiC interface. When the triple. layered films were annealed above 673 K, Si presipitates and Al_4C_3 layer were formed at the interface.
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Report
(2 results)
Research Products
(10 results)
