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Growth History of III-V Compound Crystals by IR Light Scattering Tomograpyhy

Research Project

Project/Area Number 61460238
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 結晶学
Research InstitutionGakushuin University

Principal Investigator

OGAWA Tomoya  Department of Physics, Gakushuin University, 理学部, 教授 (50080437)

Co-Investigator(Kenkyū-buntansha) KOJIMA Takahiro  department of Commerce, Senshu University, 商学部, 教授 (50070272)
KAWAI Yoriyoshi  Department of Physics, Gakushuin University, 理学部, 研究員 (30158860)
OOTSUKA Ken-ichi  Departmen of Physics, Gakushuin University, 理学部, 助手 (30101588)
Project Period (FY) 1986 – 1987
Project Status Completed (Fiscal Year 1987)
Budget Amount *help
¥6,100,000 (Direct Cost: ¥6,100,000)
Fiscal Year 1987: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1986: ¥5,100,000 (Direct Cost: ¥5,100,000)
KeywordsLight scattering tomography / Infrared light scattering / III-V compounds / Lattice Defects / 光散乱トモグラフィー / 光散乱
Research Abstract

Defects in crystals are marks and signs which have been introduced during crystal growth and then indicate how the crystals have been grown. Of course, the defects should be extracted from the crystals but we can use the defects to analyze growth mechanism of crystals by detecting distribution, sort and size of the defects. Or we can say that the study of the growth history is only one way to get well qualified crystals.
Optical property of matters do not depend directly upon the atomic numbers of their composite elements but absorption coefficient of x-rays is directly proportional to the atomic number of composite elements. Therefore, infrared (IR) light scattering, which will be caused by density fluctuation of electron densities polarized by IR radiations, is much better than x-ray diffraction if the crystals to be studied are composed of heavy elements. The density fluctuation of electrons will be caused by lattice defects such as dislocations, inclusions and voids and thus we can detect the defects by IR light scattering.

Report

(2 results)
  • 1987 Final Research Report Summary
  • 1986 Annual Research Report
  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] Tomoya Ogawa: Japan. J. Applied Physics. 25. L316-L318 (1986)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa;Nobuhito Nagano: Review of Scientific Instruments. 57. 1135-1139 (1986)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa: Japan. J. Applied Physics. 25. L916-L917 (1986)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa: Japan. J. Applied Physics. 26. L1638-L1641 (1986)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa: J. Crystal Growth. 83. (1988)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa;Takahiro Kojima: "Defect Recognition and image Proccessing in III-V Compounds II" ELSEVIER, Amsterdam, Netherlands, 207-214 (1987)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa: "Correlation between infrared-light scattering and absorption images in an In-doperd LEC GaAs crystal," Japan. J. Applied Physics,. 25. L316-L318 ((1986))

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa and Nobuhito Nango: "Infrared light scattering tomography with an electrical streak camera for characterization of semiconductor crystals," Review of Scientific Instruments,. 57. 1135-1139 (1986)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa: "A comment on defects n GaAs crystals obseved by infrared light scattering tomography and IR absorption microscopy," Japan. J. Applied Physics,. 25. L916-L917 ((1986))

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa: "Characterization of epitaxially grown semiconductive layers by scattering of optical pseudo-surface waves and interfence finges due to guided waves within the layers," Japan. J. Applied Physics. 26. L1638-L1641 ((1987))

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya Ogawa: "Dislocation lines in In-doped GaAs crystals observed by infrared light scattering tomography of about 1 um wavelength radiations," J. Crystal Growth,. 86. ((1988))

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] Tomoya OGAWA;Nobuhito NANGO: Review of Scientific Instruments. 57. 1135-1139 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] Tomoya OGAWA: Japanese Journal of Applied Physics. 26. L316-L318 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] Tomoya OGAWA: Japanese Journal of Applied Physics. 26. L916-L917 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] 小川智哉: 応用物理. 56. 89-90 (1987)

    • Related Report
      1986 Annual Research Report
  • [Publications] 小川智哉: セラミックス. 22. 96-99 (1987)

    • Related Report
      1986 Annual Research Report
  • [Publications] T.Katsumata;H.Okada;T.Kikuta;T.Fukuda;Tomoya OGAWA: "Semi-insulating 【III】-【V】 compouds" Ohmsha,Noth Holland, 6 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] Tomoya OGAWA;N.Toyoda;S.Nishine: "Semi-insulating 【III】-【V】 compound" Ohmsha,North Holland, 1 (1986)

    • Related Report
      1986 Annual Research Report

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Published: 1987-03-31   Modified: 2016-04-21  

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