Chemical Reaction and Diffusion in Materials for MOSIC
| Project/Area Number |
61470055
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
金属精錬・金属化学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
GOTO Kazuhiro Tokyo Institute of Technology, Professor, 工学部, 教授 (70016260)
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| Co-Investigator(Kenkyū-buntansha) |
SUSA Masahiro Tokyo Institute of Technology, Research Assistant, 工学部, 助手 (90187691)
NAGATA Kazuhiro Tokyo Institute of Technology, Associated Professor, 工学部, 助教授 (70114882)
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| Project Period (FY) |
1986 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥6,600,000 (Direct Cost: ¥6,600,000)
Fiscal Year 1987: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1986: ¥5,500,000 (Direct Cost: ¥5,500,000)
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| Keywords | MOSIC / Silicon / Silicon dioxide film / Thermal Oxidation / Sputtering / Vacuum Deposition / Chemical Reaction / Diffusion / Evaporation / Condensation Refractive Index / Electrochromism,Li_2O-B_2O_3 / MOS / 薄膜 / RFスパッタ / 比誘電率 / 界面反応 |
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| Research Abstract |
In this work, we have studied chemical reaction and diffusion in the manufacturing process of electronic devices and materials,i.e.,the materials for MOSIC. The work contains the following contents:(1)the kinetics of thermal oxidation of Si wafers, (2)the characterization of SiO_2 films by rf-sputtering,(3)the mechanism of evaporation and condensation process,and (4)the electrochromism of the La_2O_3-WO_3 binary oxide system. The outlines of these studies are mentioned as follows.
(1)Kinetics of thermal oxidation of Si wafers.
The oxidation rate in the ambient of CO_2 was much smaller than that in that of O_2.It can be considered that the oxidation in CO_2 is more suitable to the formation of very thin oxide-film. It was estimated that the reaction rate of the oxidation was controlled by the diffusion of the oxidant in SiO_2 and the species were O_2 and CO_2 gas molecules,respectively.
(2)Characterization of SiO_2 films by rf-sputtering.
The peoduction rate of the film by sputtering was constant, unlike that by the conventional vacuum deposition method. The values of the refractive index and the diffusion coefficient of O_2 were estimated to be almost the same with those of the thermally grown oxides.
(3)Mechanism of evaporation and condensation process.
The dependence of the evaporation- and condensation-rate on the source- and the substrate-temperaure were investigated with the use of the vacuum deposition method. When the source material was Li_2O-B_2O_3,the vapor species was estimated to be LiBO_2 by virtur of thermodynamics and the kinetic theories of gases.
(4)Electrochromism of the La_2O_3-WO_3 binary oxide system.
The electrochromism(EC) of the La_2O_3-WO_3 binary oxide system was presented. The production mechanism and the characte-ristics of the EC cells are now being studied.
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Report
(2 results)
Research Products
(16 results)
