• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

A Study of Two-Dimensional Exciton Localization and Mobility Edge by Ultrafast Time-Resolved Spectroscopy

Research Project

Project/Area Number 61540221
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 固体物性
Research InstitutionNagoya University

Principal Investigator

NAKAMURA Arao  School of Engineering, associate Professor, 工学部, 助教授 (50159068)

Project Period (FY) 1986 – 1987
Project Status Completed (Fiscal Year 1987)
Budget Amount *help
¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1987: ¥200,000 (Direct Cost: ¥200,000)
Fiscal Year 1986: ¥1,600,000 (Direct Cost: ¥1,600,000)
Keywordsshort-period superlattices / picosecond time-resolved spectroscopy / exciton localization / two-dimensional excitons / carrier sink / Tunneling effect / 共鳴トンネル効果 / トンネル効果を伴った再結合過程 / 二次元励起子量子井戸のキャリヤ吸い込み
Research Abstract

In this project, we have studied dynamics of exciton localization and correlation between localization and exciton transfer perpendicular to the superlatticelayers by means of the picosecond time-resolve spectroscopy. We have used GaAs/AlAs short-period superlattices with a an enlarged well (SQW) which is intentionally introduced.
In order to perform time-resolved spectroscopy, we have installed a time-correlated single photon counting apparatus including a constant fraction discriminator and a fast timing amplifier. We could obtain 50ps time-resolution using this photon counting system and a mode-locke Nd:YAG laer.
We have performed time-resolved photoluminescence experiments in GaAs/AlAs short-period superlattices(SPS). We have found, for the first time, the tunneing-assisted recombination of electrons and holes in different wells of SPS with thin barriers. It is also found that the direct correlation between the carrier flow from SPS and the carrier sink into SQW.
Perpendicular transport is strongly dependent on the barrier thickness. Varying the barrier thickness from 0.9nm to 1.8nm, we have observed the increase in the tunneling transfer and then the formation of the miniband state for the thiner barrier.
In coclusion, picosecond time-resolved spectroscopy of GaAs/AlAs short-period superlattices gives us some important informations on the quantum confinement of carriers and excitons, i.e. the localization(two-dimensionality) and the perpendicular transport(three-dimensionality) due to the formation of Bloch states by the coupling between wells.

Report

(2 results)
  • 1987 Final Research Report Summary
  • 1986 Annual Research Report
  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] A.Nakamura: Physical Review. B34. 9019-9022 (1986)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] K.Fujiwara: Applied Physics Letters. 49. 1193-1195 (1986)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] A.Nakamura: Journal of Luminescence. 39. 719-720 (1988)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] K.Fujiwara: IEEE Journal of Quantum Electronics. (1988)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] A.Nakamura: Physical Review. (1988)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] A. Nakamura: "Dynamics of Photoexcited Carriers Sinking into an Enlarged Well in Short-Period Superlattices" Physical Review. B34. 9019-9022 (1986)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] K. Fujiwara: "Improved Recombination Lifetime of Photoexcited Carriers in GaAs Single Quantum Well Heterostructures Confined by GaAs/AlAs short-period Superlattices" Applied Physics Letters. 49. 1193-1195 (1986)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] A. Nakamura: "Dynamics of Excitons Sinkling into An Enlarged Well in GaAs/AlAs Short-Period Superlattices" Journal of Luminescence. 39. 719-720 (1988)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] K. Fujiwara: "Polarization Anisotropy and Valence Subband Mixing in Short-Period Superlattices" IEEE Journal of Quantum Electronics. (1988)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] A. Nakamura: "Dynamics of Photoexcited Carriers and Resonant Tunneling Effects in GaAs/AlAs Short-Period Superlattices" Physical Review. (1988)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1987 Final Research Report Summary
  • [Publications] A.Nakamura;K.Fujiwara;Y.Tokuda;T.Nakayama;M.Hirai: Physica Review B (Rapid Communicatios). 34. 9019-9022 (1986)

    • Related Report
      1986 Annual Research Report
  • [Publications] A.Nakamura;K.Fujiwara;Y.Tokuda;T.Nakayama;M.Hirai: Journal of Luminescence.

    • Related Report
      1986 Annual Research Report

URL: 

Published: 1987-03-31   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi