Research on Electronic Structure of Alkali overlayer on Semiconductors and Metals
| Project/Area Number |
61550026
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Fukuoka Institute of Technology |
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Principal Investigator |
KATO Tomohiko Fukuoka Institute of Technology,Professor, 工学部・電子工学科, 教授 (90023217)
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| Co-Investigator(Kenkyū-buntansha) |
OHTOMI Ken-ichi Fukuoka Institute of Technology,Associate Professor, 工学部・電子工学科, 助教授 (80140804)
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| Project Period (FY) |
1986 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1987: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1986: ¥700,000 (Direct Cost: ¥700,000)
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| Keywords | work function / surface of semiconductor / alkali overlayer random system on surface / 表面不規則系 / クラスターCPA |
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| Research Abstract |
The aim of this project is to give a general method for calculation of the electronic structure of the adatom-surface system.The process and results are as follows;
(1986/4-1987/3)
First a formulation for the electronic structure of a surface random system was tried in the central-site-coherent-potential approximation.It was found that the approximation gives a foundamental difficulty.Second the boundary-site-CPA was adopted and rather reasonable results were obrained.
(1987/4-1988/3)
Above approximation has a limitation that it can be adopted only the system with a nearest neighbor hopping.The present system has more distant hopping.To include this effect,the Cell-CPA is adopted and the numerical results for alkali on Si(100)explain the characteristic feature of the coverage dependence of the eotk function and the electronic structure.
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Report
(2 results)
Research Products
(5 results)
