Development of new sputtering system for film deposition of perpendicular magnetic recording at high rate
| Project/Area Number |
61550225
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Toyama University |
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Principal Investigator |
YOSHIDA Jundaku Faculty of Engineering, Toyama University, 工学部, 教授 (70126499)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAHASHI Takakazu Faculty of Engineering, Toyama University, 工学部, 助手 (80019223)
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| Project Period (FY) |
1986 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 1987: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1986: ¥1,300,000 (Direct Cost: ¥1,300,000)
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| Keywords | Sputtering / Perpendicular magnetic recording / 薄膜の高速作成 |
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| Research Abstract |
In 1986, Exposed pole (EP) magnetron sputtering cathode was improved in order to research a suitable condition of film deposition and we constructed a new sputtering system. Co-Zr amorphous films for perpendicular magnetic recording head were prerated by using this system. As a result, film deposition rate Rd decreasing with increasing Ar gas pressure Pr was approximately proportional to in put power Pi. Maximum Rd was 0.16<micrn>m/min at Pr=0.2Pa and Pi=600W. Substrate temperature Ts was increases with increasing Pi and about 100゜C at 600W. This suggests that high rate and low temperature sputtering is possible for larger Pi. The easy axis of as deposited films arranged in the direction of magnetron magnetic flux. On the other hand, the hard axis of these is at right angle to the easy axis in the film plane. Coercive force Hc and saturation magnetization <pi>Ms along both axes were about 0.25-1.0 Oe and 10-14 kG, respectively. The obtained films shows the low Hc and high 4<pi>Ms. But
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the film composition was not uniform because films were prerared by using toroidal, disc and cylinder target in this experiment. Composition of Zr in the films ranged from 10 to 20at%.
In 1987 EP magnetron sputtering system only using a toroidal target and operating DC magnetic coil was improved to solve above problem. But it was difficult to erode only toroidal target, though magnetic field on the targets was changed variously. So the outer yoke of Compressed Magnetic Field(CMF) magnetron sputtering system was exposed near the target surface. Co-Zr-Nb amorphous films for perpendicular head were prerared by this system. As a result, dischanrge characteristics showed constant and low voltage and at higher Pr, applied voltage was low. Rd was 0.13 <micrn>/min at 4.4 W/cm^2. As deposited films had soft magnetic properties as well as Co-Zr film Hc ranged 0.25-30 Oe and 4<pi>Ms was about 14kG along the hard axis. EP and CMF magnetron sputtering technique is effective to deposit the magnetic films. In future magnetic circuit of magnetron cathode should be discussed in detail for deposition of higher quality films. Less
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Report
(2 results)
Research Products
(4 results)
