Preparation of composition-modulated ALN/Al_2O_3 structure and its application to acoustic wave devices
| Project/Area Number |
61550272
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子機器工学
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| Research Institution | Chiba University |
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Principal Investigator |
YAMAGUCHI Masatsune Chiba University, Professor, 工学部, 教授 (00009664)
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| Co-Investigator(Kenkyū-buntansha) |
HASHIMOTO Ken-ya Chiba University, Research Assistant, 工学部, 助手 (90134353)
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| Project Period (FY) |
1986 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1987: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1986: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Keywords | ZnO / AlN / Sputter / Acoustic Waves / SAW / Composition-modulated Structure / Elastic Super Lattice / 有限要素法 |
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| Research Abstract |
The project is aimed at synthesising composition-modulated piezoelectric materials and applying them to acoustic wave devices. The composition-modulated materials are those which are realised by spacially arranging more than two materials of different kind.
The result has shown that the composition-modulated material can be regarded as a homogeneous material when the periodicity for the spacial arrangement is less than about 1/5 acoustic wavelengths. However, for an increased periodicity (or a decreased acoustic wavelength), higher order modes propagate and the behaviour of the composition-modulated material becomes complicated. Added to these facts, it is shown that sophisticated arrangements of its constituent materials give the composition-modulated material new properties which do not lie between those of its constituent materials. Experimentally, preparation of piezoelectric AlN films by reactive DC magnetron sputtering in an N_2 or N_2+Ar atmosphere has been attempted. Finally, a ZnO and AlN structure was prepared on a GaAs substrate to develop a monolithic surface acoustic wave device. As was expected from the theoretical analysis, the structure exhibited a large piezoelectric coupling. However, it was found that a technique to prepare very thin piezoelectric AlN fims of less than 0.5<micrn> is needed to develop a composition-modulated structure consisting of thin multi-layers.
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Report
(2 results)
Research Products
(15 results)
