| Project/Area Number |
61890002
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| Research Category |
Grant-in-Aid for Developmental Scientific Research
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| Allocation Type | Single-year Grants |
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| Research Field |
広領域
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| Research Institution | TOHOKU UNIVERSITY |
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Principal Investigator |
TSUKAMOTO K Faculty of Science Assistgantg Professor, 理学部, 助手 (60125614)
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| Co-Investigator(Kenkyū-buntansha) |
寺嶋 一高 東芝総合研究所, 主任研究員
SUNAGAWA I Tohoku University, Faculty of Science, Professor, 理学部, 教授 (20004426)
TERASIMA K Toshiba Electric Co. Ltd. Head researcher
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| Project Period (FY) |
1986 – 1987
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| Project Status |
Completed (Fiscal Year 1987)
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| Budget Amount *help |
¥20,500,000 (Direct Cost: ¥20,500,000)
Fiscal Year 1987: ¥7,500,000 (Direct Cost: ¥7,500,000)
Fiscal Year 1986: ¥13,000,000 (Direct Cost: ¥13,000,000)
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| Keywords | In situ observation / Crystal growth mechanism / Crystal growth / Surface obserfvation / Infrared microscopy / Space experiment / 宇宙実験 / マイクログラビティー / ホフマンモジュレーション顕微鏡 |
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| Research Abstract |
In situ observation of the crystal growth process for GaAs was performed. This experiment was.performed by the development of a in situ observation growth cell and an optical system using infrared light. Combination of the growth cell and the microscopy enabled us to visualize the growth and dissolution process of GaAs crystals in real time.
The optical systgem also enabled us to visualize the defects in crystals by meand of reflection infreared microscopy for the first time. This observation method was found to be suitable for the present investiga- tion.
Since the in situ observation system is compact and enables to visualize the growth process of varietied of crystals,it was found to be very suitable for the experiment in microgravity.
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