| Project/Area Number |
62470064
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
無機工業化学
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| Research Institution | Osaka University |
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Principal Investigator |
KANAMARU Fumikazu Osaka Univ., Inst. Sci. Ind. Research, Prof., 産業科学研究所, 教授 (40029848)
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIASA Akira Hiroshima Univ., Faculty of Sci. Assistant, 理学部, 助手 (00191536)
KOTO Kichiro Tokushima Univ., Integrated Arts and Sci. Prof., 総合科学部, 教授 (40029872)
TAKAHASHI Masao Osaka Univ., Inst. Sci. Ind. Assistant, 産業科学研究所, 助手 (00188054)
NOBUGAI Kouji Osaka Univ., Inst. Sci. Ind. Assistant, 産業科学研究所, 助手 (70156222)
KIKKAWA Shinichi Osaka Univ., Inst. Sci. Ind. Assistant Prof., 産業科学研究所, 助教授 (10127219)
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| Project Period (FY) |
1987 – 1989
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| Project Status |
Completed (Fiscal Year 1989)
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| Budget Amount *help |
¥5,400,000 (Direct Cost: ¥5,400,000)
Fiscal Year 1989: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1988: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1987: ¥3,400,000 (Direct Cost: ¥3,400,000)
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| Keywords | Solid electrolyte / Electrode for 2nd buttery / TiS_2 thin film / Superconducting nitrides / TiN-AlN thin films / MoN-T_MN(T_M=Nb,Zr,Ti) / YBa_2Cu_3O_y(F,Cu) thin film / TiN-AlN系薄膜 / MoNーT_MN(T_M:Nb、Zr、Ti)系薄膜 / YBa_2Cu_3O_<7-X>(F、Cu)薄膜 / 固体電解質薄膜 / Agイオン伝導体 / 窒化物薄膜 / Cu_3N薄膜 / YBa_2Cu_3O_<7-x>(F,Cu)薄膜 / rfースパッタリング法 / βーアルミナ薄膜 / βーAgI薄膜 / TinーAlN系固溶体 / TiNーAlN系窒化物薄膜 / 耐化学性被膜 |
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| Research Abstract |
The thin films of inorganic materials such as solid electrolytes,coating materials ,opto-electronic materials and superconductors were prepared using non-equilibrium reaction processes, e.g. reaction sputtering and plasma CVD methods. The relationships among their properties, microstructure and hybridization were investigated as follows.
1 . Solid electrolyte: (i) The beta-AgI film prepared by direct iodization of the thin Ag film on the silica glass substrate exhibited high ionic conductivity larger by 2-order than that of bulk beta-AgI. (ii)TiS_2 films with the c-plane parallel to the film was fabricated by plasma CVD, and unexpectedly large discharge capacity was observed on a Li battery.
2. Metal nitride films: (i)New mixed crystal films in the TiN-AlN system were prepared by rf-sputtering. Their band gap. varied in a range from 0 to 5.2eV corresponding to the composition, and durability against oxidation for the films was intensively improved. (ii) The mixed crystal films of the MoN-T_MN (T_MN= Ti,Zr,Nb) systems were prepared by a reaction sputtering. Stability regions of NaCl-type and WC-type structures in the systems were determined as functions of the number of valence electron and the atomic radius ratio of metal to nitrogen. Their electronic structure was elucidated on the basis of the results of XPS and hole effect measurements. The newly obtained WC-type mixed crystals in the No-rich composition region exhibited superconductivity with T_c as high as 11 - 15K .
3 . Superconducting oxide film: Fluorine addition to YBa_2CU_3O_y film intensively enhanced both platy YBCO crystal growth above 900ﾟC and preferred orientation with the c-plane parallel to the film.
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