| Project/Area Number |
62470068
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
無機工業化学
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| Research Institution | Aoyama Gakuin University |
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Principal Investigator |
MATSUMOTO Osamu AOYAMA GAKUIN UNIVERSITY DEPARTMENT OF CHEMISTRY, PROFESSOR, 理工学部, 教授 (80082759)
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| Project Period (FY) |
1987 – 1989
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| Project Status |
Completed (Fiscal Year 1989)
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| Budget Amount *help |
¥6,000,000 (Direct Cost: ¥6,000,000)
Fiscal Year 1989: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1988: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1987: ¥4,000,000 (Direct Cost: ¥4,000,000)
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| Keywords | Diamond / Hexagonal BN / Plasma / Non-equilibrium phase / Thin film Synthesis / プラズマジェット / ECR / 透明半導性炭素質膜 / 透明導電性ポリマー / 薄膜 / プラズマ / 直流プラズマジェット / 窒化ホウ素 / 透明半導性ポリマー |
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| Research Abstract |
1. (1) When diamond was deposited from methane -hydrogen Plasma prepared using microwave discharge, graphite, which was codeposited with diamond was removed with atomic hydrogen by a chemical sputtering. Diamond was deposited from a carbon monoxide-hydrogen plasma prepared using microwave discharge. In this case, the reaction scheme, which diamond was deposited through CH_x radicals which were prepared by the Fischer-Tropsch reaction between CO and H_2, proposed.
(2) An addition of several vol.% of hydrogen into the argon-methane plasma jet was necessary to deposit diamond using plasma jet under reduced pressure. In the deposition of diamond, the deposits were changed with changing the substrate materials. This would be due to the solubility of hydrogen into the substrate materials.
2. From the pure methane plasma prepared by the ECR apparatus, a transparent as well as semi conducting polymer thin film was deposited on the substrate placed at the ECR resonant point on the wall of the fused silica tube. The film may contain a small amount of conducting materials, such as graphite, and consist of a three dimensional cross-linked network including conjugated double bond.
3. Boron nitride was deposited by the reaction of B_2H_6 with nitrogen in a microwave discharge. The deposition of hexagonal wurzite type and cubic type BN thin films on the substrate set in the tail of the discharge was detected. As NH and BH radicals identified in the discharge, these radicals reacts on the substrate and BN was formed.
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