| Project/Area Number |
62470100
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
高分子合成
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| Research Institution | Chiba University |
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Principal Investigator |
SUGITA Kazuyuki Faculty of Engineering, Chiba University, 工学部, 助教授 (70009273)
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| Co-Investigator(Kenkyū-buntansha) |
KOSEKI Ken-ichi Faculty of Engineering, Chiba University, 工学部, 助手 (70092054)
UENO Nobuo Faculty of Engineering, Chiba University, 工学部, 助手 (40111413)
YAMAOKA Tsuguo Faculty of Engineering, Chiba University, 工学部, 教授 (60009256)
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| Project Period (FY) |
1987 – 1988
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| Project Status |
Completed (Fiscal Year 1988)
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| Budget Amount *help |
¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1988: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1987: ¥1,900,000 (Direct Cost: ¥1,900,000)
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| Keywords | VUV / photoetching / lithography / polymer resist / 表面光化学反応 / リソグラフィー / 高分子 |
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| Research Abstract |
We performed mass spectroscopic study of vaporized species during ultraviolet (UV) and vacuum UV (VUV) light irradiation to polymer resists including poly(methylmethacrylate) (PMMA), and found a remarkable difference between the spectra obtained during UV and VUV irradiation. In the case of VUV irradiation, the intense mass peaks which are the result of direct main chain scission were obviously observed. Further, the effective unzipping reaction to produce monomer was found for the etching in vacuum at a temperature below the ceiling temperature.
On the other hand, the possibility of directional photoetching of silicon (100) and PMMA was studied using VUV light under the existence of reactive species pruduced by 2.4k GHz discharge of CF_4/0_2 gas. For both materials, the chemical dry etching by the reactive species was clearly enhanced by VUV irradiation to the surface of the materials. The results indicate that the VUV induced etching is the result of a surface photochemical reaction which is useful in producing anisotropic photoetching.
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