| Project/Area Number |
62550216
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
電子材料工学
|
|---|
| Research Institution | Kitami Institute of Technology |
|---|
Principal Investigator |
SASAKI Katsutaka Kitami Institute of Technology, Associate Professor, 工学部, 助教授 (80091552)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
NOYA Atsushi Kitami Institute of Technology, Research Associate, 工学部, 助手 (60133807)
|
|---|
| Project Period (FY) |
1987 – 1988
|
| Project Status |
Completed (Fiscal Year 1988)
|
| Budget Amount *help |
¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1988: ¥200,000 (Direct Cost: ¥200,000)
Fiscal Year 1987: ¥800,000 (Direct Cost: ¥800,000)
|
|---|
| Keywords | Intermetallic compound film / Diffusion barrier / Interdiffusion / Interface reaction / Auger electron spectroscopy / オージェ電子分光分析 / キャラクタリゼーション / SiLSI薄膜技術 / 金属関化合物膜 / 結晶構造 / 表面のキャラクタリゼーション |
|---|
| Research Abstract |
ABSTRACT OF PROJECT We have prepared Al_3Ta intermetallic compound film as one of the possible metallization materials in Si-LSI thin film technology. The stoichiometric Al_3Ta film can prepared by using co-sputtering method at substrate temperature of 400゜C. It is shown that the resistivity value of Al_3Ta film prepared by this method corresponds to that of bulk Al_3Ta. It is also found that the film surface is passivated with thin Al_2O_3 layer by the preferential oxidation. We have then studied the interdiffusion between Al_3Ta film and Si substrate by Auger depth profile varying substrate temperatures during deposition. It is revealed that the interfacial Ta layer containing silicide bonding is formed on Si during deposition and acts as a blocking barrier of Al spike formation into Si. This is due to the location of chemical species in each Al_3Ta, interfacial layer ans Si. However, the diffusions of Si into Al_3Ta are observed with increasing substrate temperatures. Thus, we have constituted Al_3Ta/Ta/Si contact structure by interposing artificial Ta layer of about 300 A^^゜ between Al_3Ta and Si in order to reduce such diffusions. It is concluded by Auger examination that the contact structure is sufficiently stable up to 500 ゜C at least.
|
