| Project/Area Number |
62550570
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
無機工業化学
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| Research Institution | University of Osaka Prefecture |
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Principal Investigator |
TOHGE Noboru College of Engineering University of Osaka Prefecture, 工学部, 講師 (00081315)
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| Project Period (FY) |
1987 – 1988
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| Project Status |
Completed (Fiscal Year 1988)
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| Budget Amount *help |
¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1988: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1987: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Keywords | Ferroelectric Films / Sol-Gel Method / Metal Alkoxide / Chelating Agent / PbTiO_3-PbZrO_3系 / ゾルーゲル法 / PbTiO_3ーPbZrO_3系 / キレート化剤 / ペロブスカイト相 |
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| Research Abstract |
The sol-gel method which starts from metal-aldoxides is a promising process to prepare various oxide films. The present study has been carried out to establish the sol-gel process to form ferroelectric films in the system PbTiO_3-PbZrO_3. One of the problems encountered in the process is that these alkoxides of Ti and Zr is easily hydrohyzable. The stabilization of the alkoxides has been examined and then the PbTiO_3-PbZrO_3 films has been prepared from the stabilized alkoxides. The following results have been obtained through the present study: (1) ZrO_2 or B_2O_3-containing multicomponent films have been prepared from very hydrolyzable Zr- or B-alkoxides by carrying out the coating in a dry atmosphere. (2) Metal alkoxides of Al, Ti, or Zr have been found to be stabilized with chelating agents such as betha-diketones. Very homogeneous Al_2O_3, TiO_2, or ZrO_2 films have been obtained from the stabilized alkoxides of corresponding metals. (3) Ferroelectric films in the system PbTiO_3-PbZrO_3 have been prepared from Ti(O-nBu)_4 and Zr(O-nBu)_4 stabilized with acetyleacetone. The films obtained are amorphous below 400 c and crystallized by the heat-treatment at 500 c. The crystallinity of the films is increased with increasing heat-treatment temperature, accompanying the increase in dielectric constant. The dielectric constant of the films in the system PbTiO_3-PbZr/_3 decreases as the content of PbZrO_3 is increased.
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