| Project/Area Number |
62850050
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| Research Category |
Grant-in-Aid for Developmental Scientific Research
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | TOHOKU UNIVERSITY |
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Principal Investigator |
SHIBATA Tadashi Associate Professor, Faculty of Engineering, Tohoku University, 工学部, 助教授 (00187402)
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| Co-Investigator(Kenkyū-buntansha) |
MORITA Mizuho Research Associate, Faculty of Engineering, Tohoku University, 工学部, 助手 (50157905)
OHMI Tadahiro Professor, Faculty of Engineering, Tohoku University, 工学部, 教授 (20016463)
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| Project Period (FY) |
1987 – 1988
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| Project Status |
Completed (Fiscal Year 1988)
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| Budget Amount *help |
¥19,800,000 (Direct Cost: ¥19,800,000)
Fiscal Year 1988: ¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 1987: ¥14,700,000 (Direct Cost: ¥14,700,000)
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| Keywords | bias-sputtering / thin film formation / low temperature epitaxy / pure aluminum metalization / hillock-free / エピタキシャルシリコン / スパッタ成膜 / アルミ薄膜 |
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| Research Abstract |
The RF-DC coupled-mode bias sputtering system has been developed in which important process parameters are all able to be controlled, precisely and independently. Using this system, a new film formation technology called "Low-Kinetic-Energy Particle Process" has been established. In this process, concurrent low energy ion bombardment of a growing film surface is utilized to activate the surface atoms, thus controlling the kinetics of crystal growth. As a result, formation of high quality thin films at extremely low temperatures have been realized. Pure aluminum films formed by this process exibited hillock-free features up to a 500゜C annealing temperature as well as an excellent step coverage at contact holes. One of the most remarkable achievements in this project is the formation of perfect epitaxial silicon layer at such a low temperature as 300゜C or below. This has been achieved by optimizing the low-energy ion bombardment conditions for film growth as well as for in situ substrate surface cleaning. The research results obtained in this study have opened a new avenue in the fabrication technology for future advanced device structure in deep submicron ULSI era.
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