| Project/Area Number |
63302021
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| Research Category |
Grant-in-Aid for Co-operative Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Nagoya University |
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Principal Investigator |
YASUDA Yukio Nagoya University, School of Engineering Professor, 工学部, 教授 (60126951)
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| Co-Investigator(Kenkyū-buntansha) |
YONEZU Hiroo Toyohashi University of Techonology, Faculty of Engineering, Professor, 工学部, 教授 (90191668)
NSHINAGA Tatau The University of Tokyo, Faculty of Engineering, Professor, 工学部, 教授 (10023128)
MIHAMA Kazuhiro Nagoya University, School of Engineering Professor, 工学部, 教授 (50023007)
UCHIYAMA Susumu Nagoya University, School of Engineering Professor, 工学部, 教授 (40023022)
AKASAKI Isamu Nagoya University, School of Engineering Professor, 工学部, 教授 (20144115)
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| Project Period (FY) |
1988 – 1989
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| Project Status |
Completed (Fiscal Year 1989)
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| Budget Amount *help |
¥11,300,000 (Direct Cost: ¥11,300,000)
Fiscal Year 1989: ¥4,900,000 (Direct Cost: ¥4,900,000)
Fiscal Year 1988: ¥6,400,000 (Direct Cost: ¥6,400,000)
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| Keywords | Functional Thin Film / Thin Film Growth Method |
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| Research Abstract |
The purpose of this study is to research new functional thin films and to develop thin film growth methods through a technological and interdisciplinary interchange among the researchers which investigate functional materials and thin film growth methods. In this period of study, various functional thin films and growth methods have been developed in each research field attracted attention now. It can be said that our original purpose has been achieved by the study in closer cooperation with researchers in other fields. A part of concrete results is as follows: (1) Gas source molecular beam epitaxy has been drastically extended in this period, and formation of very thin films of high quality and precise control of film growth has been made possible. (2) By using excited processes, new functional thin films such as diamond and composite films of metal-organic material and thin films which cannot be formed by a conventional method have been formed. In addition, the low temperature growth of high-T_c superconducting thin films has been also successful. (3) The growth control technology at atomic layer level has lead to development of solid state physics at interfaces and surfaces. (4) The study including a possibility as functional thin films, such as an application of diamond films to semiconductors and physical properties of composite films of metal-organic material and insulator semiconductor, has been developed.
We have been able to grasp the relation between thin film growth methods and functional materials in the form of a matrix. This fact leads to the effective application of growth methods and makes clear the field remaining as an unknown domain of science. Therefore, we can expect the development of material and growth methods in this domain, because the unknown domain is considered to have a potential possibility.
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