| Project/Area Number |
63460056
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Kyoto University |
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Principal Investigator |
MATSUNAMI Hiroyuki Kyoto Univ., Dept. of Electrical Eng., Professor, 工学部, 教授 (50026035)
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIMOTO Masahiro Kyoto Univ., Dept. of Electrical Eng., Research Associate, 工学部, 助手 (20210776)
FUYUKI Takashi Kyoto Univ., Dept. of Electrical Eng., Associate Professor, 工学部, 助教授 (10165459)
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| Project Period (FY) |
1988 – 1989
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| Project Status |
Completed (Fiscal Year 1991)
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| Budget Amount *help |
¥6,500,000 (Direct Cost: ¥6,500,000)
Fiscal Year 1989: ¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 1988: ¥3,700,000 (Direct Cost: ¥3,700,000)
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| Keywords | amorphous semiconductor / heterojunction / hot-electron / tunneling conduction / amorphous silicon / amorphous silicon carbon / superstructure / 超格子 / 熱電子放出伝導 / アモルファスシリコンカーボン / キャリア輸送過程 / 膜内水素 / 光電子分光法 |
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| Research Abstract |
In this paper, we discuss microscopic structures and electrical properties of the a-Si : H/a-Si_<1-x>C_x : H (x=0.2, 0.5 and 0.8) ultra-thin multilayers fabricated by a glow discharge method.
The scheme of hydrogen incorporation in the well layer was determined by the analysis of infrared absorption measurements over the range of the well-layer thickness from 11 to 510 A. Hydrogen atoms are incorporated into the well layer in the form of Si-H_2 dihydride bonds up to a well-layer thickness of 40 A, and then Si-H monohydride bonds are formed. Even up to. 100 A, the Si-H_2 dihydride bonds are dominant rather than the Si-H monohydride bonds.
The transport mechanism across the multilayers has been investigated. In a-Si : H/a-Si_<0.2>C_<0.8> : H multilayers with p-type well layers, Schottky mission conduction is dominant at first and then the Fowler-Nordheim conduction is observed with increasing applied voltage. For p-type well layers, room-temperature tunneling currents is demonstrated on an optimum condition for the doping level in the well layer.
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