An Analysis of Anisotropic Etching Process and Prediction of Finished Profile
| Project/Area Number |
63460084
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
機械工作
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| Research Institution | TOKYO METROPOLITAN UNIVERSITY |
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Principal Investigator |
FURUKAWA Yuji TOKYO METROPOLITAN UNIV., FACULTY OF TECHNOLOGY, Prof., 工学部, 教授 (10087190)
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| Co-Investigator(Kenkyū-buntansha) |
YOKOGAWA Munehiko TOKYO METROPOLITAN UNIV., FACULTY OF TECHNOLOGY, Research Associate, 工学部, 助手 (10191496)
MORONUKI Nobuyuki TOKYO METROPOLITAN UNIV., FACULTY OF TECHNOLOGY, Research Associate, 工学部, 助手 (90166463)
SAKUMA Hideo TOKYO METROPOLITAN UNIV., FACULTY OF TECHNOLOGY, Research Associate, 工学部, 助手 (20128573)
OHISHI Susumu AOYAMA GAKUIN UNIV., FACULTY OF TECHNOLOGY, Assistant Prof., 工学部, 助教授 (70094258)
SAKAKI Yasuaki TOKYO METROPOLITAN UNIV., FACULTY OF TECHNOLOGY, Prof., 工学部, 教授 (50083332)
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| Project Period (FY) |
1988 – 1989
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| Project Status |
Completed (Fiscal Year 1989)
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| Budget Amount *help |
¥8,100,000 (Direct Cost: ¥8,100,000)
Fiscal Year 1989: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1988: ¥7,700,000 (Direct Cost: ¥7,700,000)
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| Keywords | etching / micro maching / finished accuracy / computer simulation / 異方性 / 仕上がり形状 / コンピュータシミュレーション |
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| Research Abstract |
Single crystalized pure silicon possesses very high mechanical properties which are equivalent to those of steels, nevertheless, it is not widely applied to the mechanical component because of its difficulty to machine precisely by cutting operation.
On behalf of this, etching is often used in which anisotropic characteristic of single crystal is used. The orientation of faces to compose the shape of finished workpiece can be fundamentally decided by the anisotropic characteristic, however, the finished profile does not always coincide with that of mask, which limits the utilization of the process.
This study makes the anisotropic etching mechanism clear through the experiments under a variety of conditions, and the relation between each etching condition with the process parameters is established empirically. Then, the computer simulation of the process is established based on these relations, by which it becomes possible to foresee the finished profile for any given mask now.
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Report
(3 results)
Research Products
(10 results)
