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Investigation on the Effect of in situ Plasma Supply During Growth of Polycrystalline Silicon Films by Low-Pressure Chemical Vapor Deposition, and on their Electric Conduction Properties

Research Project

Project/Area Number 63550011
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionKanazawa University

Principal Investigator

HASEGAWA Seiichi  Kanazawa Univ. Fac. of Tech., Professor, 工学部, 教授 (10019755)

Project Period (FY) 1988 – 1989
Project Status Completed (Fiscal Year 1989)
Budget Amount *help
¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1989: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1988: ¥1,300,000 (Direct Cost: ¥1,300,000)
KeywordsPolycrystalline Si / CVD / Plasma supply / Preferential orientation / Surface roughness / Doping efficiency / Thin-film transistor / プラズマ印加効果 / 結晶軸配向 / ドーピング効率 / 伝導機構
Research Abstract

Polycrystalline Si (poly-Si) films were prepared on a fused quartz substrate as a function of the rf power (0-30 W), deposition temperature (T_d = 620-770゚C) and hydrogen dilution ratio (H_2/SiH_4 = 0 to 8).
1. Structural Changes and Stability against Foreign Contamination in Undoped Poly-Si films. As the rf power is increased, the preferential orientation to a random, <100> and <110> texture can be selected. The effect of rf plasma supply during the film growth on the structural properties was found to act as an equivalent effect to a decrease in T_d or a decrease in H_2/SiH_4 (an increase in the partial pressure of SiH_4). Furthermore, the plasma supply was found to have industrially useful effects for smoothing the film surface and improving the stability against foreign contamination such as oxygen. The structural change with the plasma supply was interpreted in terms of both of a change in deposition rate and a change in a surface-diffusion coefficient of SiH-related adsorbates. Th … More e improvement of surface roughness with the plasma supply was explained in terms of a sputtering effect which is likely to be also responsible for the structural change.
2. Doping Efficiency. The doping efficiency for phosphorus and boron in poly-Si films deposited by plasma-enhanced chemical vapor deposition (PECVD) method was largely improved as compared with that in poly-Si films prepared by low-pressure CVD (LPCVD) without plasma supply. The structure of doped films was similar to that of undoped films. Also PECVD films had very smooth surface independent of doping level, though the roughness of LPCVD films largely increased in an intermediate doping range.
3. Examination of Thin-Film transistors. The field-effect mobility for thin-film transistors fabricated on the undoped poly-Si films was investigated. The highest mobility was observed for PECVD films exhibiting a dominant <110> texture, while LPCVD films with a random texture had the lowest mobility. These results were discussed in terms of the crystallite size, preferential orientation and surface roughness. Less

Report

(3 results)
  • 1989 Annual Research Report   Final Research Report Summary
  • 1988 Annual Research Report
  • Research Products

    (11 results)

All Other

All Publications (11 results)

  • [Publications] 長谷川誠一: "Structural and electrical properties of P-and B-doped polycrystalline silicon by plasma-enhanced CVD at 700℃" Japanese Juurnal of Applied Physics. 28. 1522-1524 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 長谷川誠一: "Control of preferential orientation by in situ plasma supply during growth of polycrystalline silicon films" Applied Physics Letters. 55. 142-144 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 長谷川誠一: "Control of preferential orientation in polycrystalline silicon films prepared by plasma-enhaced chemical vapor deposition" Journal of Electrochemical Society.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Seiichi HASEGAWA: "Structural and electrical properties of P- and B-doped polycrystalline silicon by plasma-enhanced CVD at 700゚C" Japanese Journal of Applied Physics, 28-4, L522-L524, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Seiichi HASEGAWA: "Control of preferential orientation by in situ plasma supply during growth of polycrystalline silicon films" Applied Physics Letters, 55-2, 142-144, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Seiichi HASEGAWA: "Control of preferential orientation in polycrystalline silicon films prepared by plasma-enhanced chemical vapor deposition" Journal of Electrochemical Society.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 長谷川誠一: "Structural and electrical properties of P-and B-doped polycrystalline silicon by plasma-enhanced CVD at 700℃" Japanese Journal of AppliedPhysics. 28. L522-L524 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] 長谷川誠一: "Control of preferential orientation by in situ plasma supply during growth of polycrystalline silicon films" Applied Physics Letters. 55. 142-144 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] 長谷川誠一: "Control of preferential orientation in polycrystalline silicon films prepared by plasma-enhanced chemical vapor deposition" Journal of Electrochemical Society.

    • Related Report
      1989 Annual Research Report
  • [Publications] 長谷川誠一: Japanese Journal of Applied Physics.

    • Related Report
      1988 Annual Research Report
  • [Publications] 長谷川誠一: Applied Physics Letters.

    • Related Report
      1988 Annual Research Report

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Published: 1988-04-01   Modified: 2016-04-21  

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