| Project/Area Number |
63550229
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
電子材料工学
|
|---|
| Research Institution | The University of Electro-Communications |
|---|
Principal Investigator |
MORISAKI Hiroshi The University of Electro-Communications, Professor, 電気通信学部, 教授 (00029167)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
ONO Hiroshi The University of Electro-Communications, Research Associate, 電気通信学部, 助手 (00134867)
|
|---|
| Project Period (FY) |
1988 – 1990
|
| Project Status |
Completed (Fiscal Year 1990)
|
| Budget Amount *help |
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1990: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1989: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1988: ¥1,600,000 (Direct Cost: ¥1,600,000)
|
|---|
| Keywords | Semiconductor fine particles / Multi-layered Thin films / Ion-beam sputtering / Arc discharge technique / Gasーevaporation technique / Quantumーsize effects / Photoluminescence / ガス中蒸発法 / イオンビームスパッタ法 |
|---|
| Research Abstract |
In the former section of the present study, SiーSiO_2 multiーlayered thin films have been fabricated by ion beam sputtering deposition technique. The structure has been utilized for observing possible quantum-size effects which are expected to become significant when the thickness of Si layers within the multiーlayered structure becomes thin enough. Unfortunately, infrared Raman spectroscopy has shown that the Si layer is non-crystalline or fine poly-crystalline states. In the latter section, crystalline Si fine particles have been prepared by both gas evaporation and arc discharge techniques. Strong photoluminescence with subbandgap photon energies has been observed in the Si fine particles thus prepared. After oxidation of the fine particles, the photoluminescence has become abovebandgap of Si, the band tail covering the visible light region. This blue shift has been explained by aquantum-size effect originated from Si quantum dots. Several fine structures noted in the photoluminescence spectra have been explained consistently by radiative recombination of electrons and holes within a three-dimensional quantum well taking into account the presence of both heavy and light holes.
|
