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Research of Integrated Thick Film Gas Sensors

Research Project

Project/Area Number 63550241
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionNIHON UNIVERSITY

Principal Investigator

NITTA Masayoshi  Nihon University, Industrial Technology, Professor, 生産工学部, 教授 (80059782)

Co-Investigator(Kenkyū-buntansha) ABE Osamu  Nihon University, Industrial Technology, Research Assistant, 生産工学部, 助手 (50130414)
KANEFUSA Shinji  Nihon University, Industrial Technology, Instructor, 生産工学部, 講師 (20060246)
TAKETA Yoshiaki  Nihon University, Industrial Technology, Professor, 生産工学部, 教授 (40059217)
Project Period (FY) 1988 – 1989
Project Status Completed (Fiscal Year 1989)
Budget Amount *help
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1989: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1988: ¥1,200,000 (Direct Cost: ¥1,200,000)
KeywordsGas sensor / Thick film / Thick film resistor / Stannic oxides / Ruthenium oxides / Integration / SnO_2
Research Abstract

In general, the sensitivities of SnO_2-based sensors to reducing gases decrease with the addition of silica, which is mixed in order to improve the mechanical strength of sensors. It was found that sensors made of SnO_2 mixed with GeO_2(40-50%) reduced the deterioration in the sensitivity due to the adding of silica. However, the properties of sensors became unstable. Therefore, the integrated sensors by SnO_2 mixed with ThO_2 instead of GeO_2 were fabricated. Alumina substrate of 0.5 x 1 inch square was used to integrate five different elements such as Pd(1%)- SnO_2(335゚C), {Pd(1%),ThO_2(5%)}-SnO_2(335゚C), Pd(5%)-SnO_2(300゚C), Pd(3%)-SnO_2(235゚C), Pd(3%)-SnO_2 (190゚C). It was found that the detection of the constituents of a gas mixture of H_2, CO, and CH_4 could be done by comparing the properties among the five elements.
Several kinds of metal-phthalocyanine compounds(Pc) were used as gas sensitive pastes of organic semiconductors. Sensors made by PbPc mixed with Pd(3%) and RuO_2(10%) exhibited high sensitivity to H_2 and CO gas at 150 -200゚C of sensor temperature. It was found that the sensor could detect selectively H_2 and CO, since its resistivity decreased with exposure to H_2 and increased with exposure to CO.
It was found that the electrical properties and stabilities of thick film resistors depended upon the conductive particle sizes, glass particle sizes, glass softening temperatures, thermal expansion coefficients of the glass, mixing ratios of the conductive element and glass, and firing temperatures and cycles. It was also found that a resistor with high stability in the high temperature region could be obtained by using a lead borosilicate glass of which average particle size was 1 - 2 mu m and Al_2O_3 as a filler.

Report

(3 results)
  • 1989 Annual Research Report   Final Research Report Summary
  • 1988 Annual Research Report
  • Research Products

    (21 results)

All Other

All Publications (21 results)

  • [Publications] 阿部治: "THE EFFECT OF VARIOUS FACTORS ON THE RESISTANCE AND TCR OF RuO_2 RESISTORS." Active and Passive Electronic Components. 13. 67-83 (1988)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 阿部治: "RuO_2厚膜抵抗体の微細構造と伝導機構" 電気学会論文誌A. 109. 111-118 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 阿部治: "RuO_2厚膜抵抗体における抵抗値とTCR" 電気学会論文誌A. 109. 101-104 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 阿部治: "Mathematical relation between RuO_2 volume fraction and resistance of thick film resistors." JOURNAL OF PHYSICS D:APPLIED PHYSICS. 22. 1777-1787 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 兼房慎二: "Hysteresis Loop observed in Temperature Dependence of Resistivities by SnO_2-Based Gas Sensors." SOLID-STATE ELECTRONICS. 19.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 兼房慎二: "The addition effects of SiO_2 and GeO_2 on SnO_2-based gas sensors." Journal of Electronic Materials.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Osamu Abe: "The Effect of Various Factors on The Resistance And TCR of RuO_2 Resistors." Active and Passive Electronic Components vol.13, pp67-83, 1988.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Osamu Abe: "Microstructure and Electrical Conduction in RuO_2 Thick Film Resistors." Trans. Institute of Electrical Engineers of Japan vol.109-A, pp111-118, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Osamu Abe: "The Relation between Resistance and TCR of RuO_2 Thick Film resistance." Trans. Institute of Electrical Engineers of Japan vol.109-A, pp101-104, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Osamu Abe: "Mathematical relation between RuO_2 volume fraction and resistance of thick film resistors." JOURNAL OF PHYSICS D:APPLIED PHYSICS vol.22, pp1777-1787, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Shinji Kanefusa: "Hysteresis Loop Observed in Temperature Dependence of Resistivities by SnO_2-Based Gas Sensors." SOLID-STATE ELECTRONICS vol.19.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Shinji Kanefusa: "The addition effects of SiO_2 and GeO_2 on SnO_2-based gas sensors." Journal of Electronic Materials.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 阿部治: "THE EFFECT OF VARIOUS FACTORS ON THE RESISTANCE AND TCR OF RuO_2 RESISTORS." Active and Passive Electronic Components. 13. 67-83 (1988)

    • Related Report
      1989 Annual Research Report
  • [Publications] 阿部治: "RuO_2厚膜抵抗体の微細構造と伝導機構" 電気学会論文誌A. 109. 111-118 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] 阿部治: "RuO_2厚膜抵抗体における抵抗値とTCR" 電気学会論文誌A. 109. 101-104 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] 阿部治: "Mathematical relation between RuO_2 volume fraction and resistance of thick film resistors." JOURNAL OF PHYSICS D:APPLIED PHYSICS. 22. 1777-1787 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] 兼房慎二: "Hysteresis Loop observed in Temperature Dependence of Resistivities by SnO_2-Based Gas Sensors." SOLID-STATE ELECTRONICS. 19.

    • Related Report
      1989 Annual Research Report
  • [Publications] 兼房慎二: "The addition effects of SiO_2 and GeO_2 on SnO_2-based gas sensors." Journal of Electronic Materials.

    • Related Report
      1989 Annual Research Report
  • [Publications] 阿部治、武田義章、原留美吉: 電気学会論文誌A. 108. 329-334 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] Osamu Abe.・Yoshiaki Taketa.・Miyoshi Haradome.: Review of Scientific Instruments. 59. 1394-1398 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] Sinii Kanefusa.・Masayoshi Nitta.: Journal of Solid State Electronics.

    • Related Report
      1988 Annual Research Report

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Published: 1988-04-01   Modified: 2016-04-21  

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