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Dynamical Observations of MBE Grown Thin Films by Ultrahigh Vacuum In-situ Electron Microscopy

Research Project

Project/Area Number 63550543
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 金属材料(含表面処理・腐食防食)
Research InstitutionWaseda University

Principal Investigator

OSAKA Toshiaki  Waseda University, School of Science and Engineering, 理工学部, 教授 (50112991)

Project Period (FY) 1988 – 1989
Project Status Completed (Fiscal Year 1989)
Budget Amount *help
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1989: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1988: ¥1,500,000 (Direct Cost: ¥1,500,000)
KeywordsUltrahigh Vacuum In-situ Electron Microscopy / MBE Growth / Heteroepitaxial Growth / Surface Reconstructed Structure / Lattice Fitting / 超高真空その場観察顕微鏡法 / 表面緩和構造
Research Abstract

We have studied homoepitaxial growth processes and surface reconstruction of InSb{111} using ultrahigh vacuum in-situ transmission electron microscopy (UHV in-situ TEM) combined with UHV in-situ reflection electron microscopy (REM). From the TEN observations for InSb(111)B and the REM observations for both reconstructed InSb(111)A and reconstructed InSb(111)B surfaces, the following results were obtained:
(1) When the incident fluxes(1:1) of Sb_4 and In_1 are impinged onto the InSb(111)B substrate, the respective molecules form homoepitaxially grown InSb films, leaving an excess molecule Sb^* which does not contribute to the formation of the InSb films. As a result, there exists a critical temperature(T_h) for the condensation of Sb^* molecules. Below T_h, the surface concentration of Sb^*(n_<sb*>) becomes higher than a critical concentration for the condensation (n^c_), SO that two phases (InSb+Sb) grow in a polycrystalline state. However, above T_h as n_<sb*> becomes lower than n^c_, InSb films grow with the 2x2 reconstructed surfaces. This critical temperature is defined as a homoepitaxial temperature. Quantitative interpretations of T_h were discussed.
(2) By using UHV in-situ REM, changes in the surface reconstructions of InSb(111)B and InSb(111) A were for the first time observed: for (111)B from the 2x2-Sb to the 3xl-In structure at 420゚C and for (111)A from the 2x6-Sb to the 2x2-In structure at 300゚C. The particles formed on the InSb(111)B and (111)A surface at 420゚C and 450゚C respectively, intensely affected the structural transformation in the InSb(111) surface. Also, the particle formed on the InSb(111)B-3xl-In substrate played an important role in spreading the (111)B-3x3-In region which appeared during the homoepitaxial growth of InSb(111)B.

Report

(3 results)
  • 1989 Annual Research Report   Final Research Report Summary
  • 1988 Annual Research Report
  • Research Products

    (7 results)

All Other

All Publications (7 results)

  • [Publications] 大坂,他6名: "Ultrahigh vacuum in-situ transmission electron microscopy observations of molecular-beam epitaxially grown InSb(111)" J.Appl.Phys.63. 5751-5755 (1988)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 大坂,他3名: "In-situ observation of polar InSb{111}reconstructed surfaces by ultrahigh vacuum reflection electron microscopy" Surface Sci.222. L825-L830 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Osaka et al: "Ultrahigh vacuum in-situ transmission electron microscopy observations of molecular-beam epitaxially grown InSb(111)" J.Appl.Phys., 63(1988)5751.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Osaka et al: "In-situ observation of polar InSb{111} reconstructed surfaces by ultrahigh vacuum reflection electron microscopy" Surface Sci., 222(1989)L825.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 大坂他3名: "IN-SITU OBSERVATION OF THE POLAR InSb(111)RECONSTRUCTED SURFACE BY ULTRA HIGH VACUUM REFLECTION ELECTRON MICROSCOOY" Surface Sci.222. L825-L830 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] 大坂 他: J.Appl.Phys.63. 5751-5755 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] 大坂 他: Phil.Mag.,.

    • Related Report
      1988 Annual Research Report

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Published: 1988-04-01   Modified: 2016-04-21  

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