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Research of Ultra-High-Speed Optical Devices Using Multi Dimensional Quantum-Well Structure

Research Project

Project/Area Number 63850059
Research Category

Grant-in-Aid for Developmental Scientific Research (B).

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

ASADA Masahiro (1990)  Tokyo Institute of Technology, Department of Electrical & Electronics Engineering, Associate Professor, 工学部, 助教授 (30167887)

末松 安晴 (1988-1989)  東京工業大学, 工学部, 教授 (40016316)

Co-Investigator(Kenkyū-buntansha) MIYAMOTO Yasuyuki  Tokyo Institute of Technology, Department of Physical Electronics, Research Asso, 工学部, 助手 (40209953)
浅田 雅洋  東京工業大学, 工学部, 助教授 (30167887)
荒井 滋久  東京工業大学, 工学部, 助教授 (30151137)
Project Period (FY) 1988 – 1990
Project Status Completed (Fiscal Year 1990)
Budget Amount *help
¥27,800,000 (Direct Cost: ¥27,800,000)
Fiscal Year 1990: ¥8,800,000 (Direct Cost: ¥8,800,000)
Fiscal Year 1989: ¥9,000,000 (Direct Cost: ¥9,000,000)
Fiscal Year 1988: ¥10,000,000 (Direct Cost: ¥10,000,000)
KeywordsMultidimensional quantum-well laser / Ultra-high-speed optical device / GaInAs / InP / Quantum wire / Quantum box / Epitaxial Growth / Low-damage dry etching / GaInAs / 多次元量子井戸構造 / 屈折率反射型光スイッチ
Research Abstract

Multidimensional quantum-well structures, such as quantum wire and quantum box, are expected to operate with high speed due to their material properties different from conventional bulk crystals. The main purpose of this research is the development of fabrication technique of multidimensional quantum well structures and the application of these structures to devices for ultra-high capacity optical communication. Results obtained are summarized as follows.
Optimal device structures were found theoretically for laser and optical switch/modulator with multidimensional quantum well structures by analyzing the structure dependence of the laser threshold and the insertion loss of optical switch/modulator precisely.
Lasing action was obtained for the first time at 77K with pulsed current injection in GaInAs/GaInAsP/InP quantum-wire laser with 10nm-thick 30nm-wide wires fabricated by newly developed nanometer fabrication technology viz. Electron beam lithography for pattern writing, wet chemical etching and OMVPE regrowth for embedding process.
GaInAs/GaInAsP/InP multi-quantum-film lasers with wire-like active region, Which were fabricated by two step OMVPE growth and wet chemical etching, operated at room temperature for the first time, An increase in the threshold current density in such lasers was drastically reduced by using a preheating process in hydrogen atmosphere and a thin InP covering layer growth prior to the regrowth of a GaInAsP optical confinement layer.
A GaInAsP/InP quantum wire structure was fabricated by using a high vacuum electron-cyclotron-resonance reactive-ion-beam-etching system with very low acceleration voltage. Large refractive index variation (-4%) and low optical absorption under electric field application was observed in this structuure. This result indicates that multidimensional quantum well structures are suitable for high performance optical switches/modulators.

Report

(4 results)
  • 1990 Annual Research Report   Final Research Report Summary
  • 1989 Annual Research Report
  • 1988 Annual Research Report
  • Research Products

    (30 results)

All Other

All Publications (30 results)

  • [Publications] Ming Cao: "Lasing Action in GaInAs/GaInAsP QuantumーWire Structure" Transaction IEICE of Japan. Eー73. 63-70 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Kazuhiko Simomura: "Analysis of Semiconductor Intersectional Optical Switch/Modulator Using Electric Field Effect" IEEE Journal of Quantum Electronics. QEー26. 883-892 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Tomoyuki Kikugawa: "Observation of Field Induced Refractive Index Variation in GaInAs/InP Quantum Wire (QW)Structure" Electronics Letters. 26. 1012-1013 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Yasuyuki Miyamoto: "HighーQuality nーGaInAs Grown by OMVPE Using Si2H6 by High Velocity Flow" Japanese Journal of Applied Physics. 29. 1910-1911 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K.G.Ravikumar: "LowーDamage GaInAs(P)/InP Nanometer Structure by LowーPressure ECRーRIBE" Japanese Journal of Applied Physics. 29. L1744-L1746 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Yasunari Miyake: "Room Temperature Operation of GaInAs/GaInAsP/InP SCH MultiーQuantumーFilm laser with Narrow WireーLike Active Region" IEEE Photonic Technology Letters. (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] M. Cao: "Lasing Action in GaInAs/GaInAsP Quantum-Wire Structure" Trans. IEICE of Japan. vol. E-73. 63-70 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K. Shimomura: "Analysis of Semiconductor Intersectional Optical Switch/Modulator Using Electric Field Effect" IEEE J. Quantum Electron.vol. QE-26. 883-892 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] T. Kikugawa: "Observation of Field Induced Refractive Index Variation in GaInAs/InP Quantum Wire (QW) Structure" Electron. Lett. vol. 26. 1012-1013 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Y. Miyamoto: "High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High Velocity Flow" Japan. J. Appl. Phys.vol. 29. 1910-1911 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] K. G. Ravikumar: "Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE" Japan. J. Appl. Phys.vol. 29. 1744-1746 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Y. Miyake: "Room Temperature Operation of GaInAs/GaInAsP/InP SCH Multi-Quantum-Film Laser with Narrow Wire-Like Active Region" IEEE Photonic Tec. Lett.(1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] Ming Cao: "Lasing Action in GaInAs/GaInAsP QuantumーWire Structure" Transaction IEICE of Japan. Eー73. 63-70 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Kazuhiko Simomura: "Analysis of Semiconductor Intersectional Optical Switch/Modulator Using Electric Field Effect" IEEE Journal of Quantum Electronics. QEー26. 883-892 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Tomoyuki Kikugawa: "Observation of Field Induced Refractive Index Variation in GaInAs/InP Quantum Wire (QW) Structure" Electronics Letters. 26. 1012-1013 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Yasuyuki Miyamoto: "HighーQuality nーGaInAs Grown by OMVPE Using Si2H6 by High Velocity Flow" Japanese Journal of Applied Physics. 29. 1910-1911 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.G.Ravikumar: "LowーDamage GaInAs(P)/InP Nanometer Structure by LowーPressure ECRーRIBE" Japanese Journal of Applied Physics. 29. L1744-L1746 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Yasunari Miyake: "Room Temperature Operation of GaInAs/GaInAsP/InP SCH MultiーQuantumーFilm laser with Narrow WireーLike Active Region" IEEE Photonic Technology Letters. (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] T.Kikugawa: "Switching operation in OMVPE grown GaInAs/InP intersectional optical switch structures" Photonic Tech.Lett. 1. 126-128 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] Y.Miyamoto: "Threshold current density of GaInAsP/InP quantum-box laser" IEEE J.Quantum Electron.25. 2001-2006 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Matsubara: "Field induced refractive index variation in quantum box structure" Trans.IEICE. E72. 1179-1181 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] Ming CAO: "Lasing Action in GaInAs/GaInAsP Quantum Wire Structure" Trans.IEICE. E73. 63-70 (1990)

    • Related Report
      1989 Annual Research Report
  • [Publications] 菊川知之: "量子細線構造の電界屈折率変化特性測定" 1990年電子情報通信学会春季全国大会.

    • Related Report
      1989 Annual Research Report
  • [Publications] K.G.ラビクマ-ル: "超高真空・低加速電圧ECR-RIBEによるGaInAsP/InPの低損傷微細構造" 1990年春期第37回応用物理学関係連合講演会.

    • Related Report
      1989 Annual Research Report
  • [Publications] P.DASTE: J.Crystal Growth. 93. 365-369 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] M.CAO: Electron.Lett.24. 824-825 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] K.G.Ravikumar: Trans.IEICE Japan. E72. (1989)

    • Related Report
      1988 Annual Research Report
  • [Publications] K.Matsubara: Electron.Lett.

    • Related Report
      1988 Annual Research Report
  • [Publications] T.Kikugawa: Photonic Tech.Lett.

    • Related Report
      1988 Annual Research Report
  • [Publications] 和泉章: 第36回応用物理学会.

    • Related Report
      1988 Annual Research Report

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Published: 1988-04-01   Modified: 2016-04-21  

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