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Study on Fabrication Technology of GaInAs/InP Device with Ultrafine Structure

Research Project

Project/Area Number 63850077
Research Category

Grant-in-Aid for Developmental Scientific Research

Allocation TypeSingle-year Grants
Research Field 電子機器工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

FURUYA Kazuhito  Tokyo Inst. Technology, Department of Electrical and Electronic Engineering Professor, 工学部, 教授 (40092572)

Co-Investigator(Kenkyū-buntansha) MIYAMOTO Yasuyuki  Tokyo Inst. Technology, Department of Electrical and Electronic Engineering Rese, 工学部, 助手 (40209953)
浅田 雅洋  東京工業大学, 工学部, 助教授 (30167887)
荒井 滋久  東京工業大学, 工学部, 助教授 (30151137)
Project Period (FY) 1988 – 1989
Project Status Completed (Fiscal Year 1989)
Budget Amount *help
¥13,400,000 (Direct Cost: ¥13,400,000)
Fiscal Year 1989: ¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 1988: ¥8,900,000 (Direct Cost: ¥8,900,000)
KeywordsUltrafine Structure / Organometallic Vapor Phase Epitaxy / Electron Beam Exposure / Wet Chemical Etching / Electron Wave Reflection / Dry Etching / Quantum Wire Laser / OMVPE Embedding / OMVPE / 電子の波動性 / 量子サイズ / 電子波長 / 有機金属気相成長 / 電子ビーム露光法 / ウェットケミカルエッチング
Research Abstract

We have investigated the electron bean exposure and the organometalic vapor phase epitaxy (OMVPE) to create GaInAs/InP ultrafine periodic structure. The following is a summary of our result. 1. We have optimized the OMVPE condition to attain back ground carrier density as low as 10^<13>/cm^3. We have observed definite exciton peaks in room-temperature absorption spectra, the electron wave reflection at heterojunctions showing excellent heterointerfaces. 2. We have attained to draw 40nm-pitch periodic pattern by the electron beam exposure under condition newly obtained; the resist layer-thickness as thin as 40nm, the acceleration voltage as high as 50 KV, diluted developer and lowered-temperature and reduced-period post baking. 3. We have investigated to transfer the pattern to the surface of the semiconductor crystal without introducing of the crystal damage. By the two-step wet chemical etching invented by us, we have attained 50nm-pitch periodic structures which is the world finest period attained by lithography techniques 4. As an alternative transfer method, we have studied the OMVPE selective growth technique to attain 70nm-pitch structures. 5.We have investigated the reactive ion etching to transfer the pattern to obtain promising results. By reducing the acceleration voltage, a strong photoluminescence property have been preserved in samples etched vertically. 6. We have created completely embedded GaInAs/InP ultrafine(70nm-pitch and 40nm-depth) periodic structures by OMVPE regrowth at a lowered growth temperature(520 C). The lasing of the quantum wire laser fabricated by this technique have shown quite good crystal quality.
In short, we have achieved to create GaInAs/InP ultrafine periodic structures without introducing a serious damage. Further reduction in the pitch and a detail study about interface properties to improve the quality of the regrown crystal are very important theme as the next stage.

Report

(3 results)
  • 1989 Annual Research Report   Final Research Report Summary
  • 1988 Annual Research Report
  • Research Products

    (56 results)

All Other

All Publications (56 results)

  • [Publications] M.Aoki: "1.5μm GaInAsP/InP Distributed Reflector(DR)Laser with High-Low Reflection Grating Structure" Electron.Lett.25. 1650-1651 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] M.Cao: "Lasing action in GaInAs/GaInAsP quantum-wire structure" Trans.IEICE of Japan. E73. 63-70 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Furuya: "Possibility of high speed device on electron wave principle" J.Cryst.Growth. 98. 234-242 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 宮本恭幸: "化学エッチング" 応用物理. 58. 1383-1384 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] 古屋一仁: "電子波デバイス" 電子情報通信学会誌. 72. 994-996 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] E.Inamura: "Very fine corrugations formed on lnp by wet chemical etching and electron beam lithography" Electron.Lett.,. 25. 238-240 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Furuya: "Theoretical characteristics of electron diffraction transistor" Trans.IEICE of Japan. E72. 307-309 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Uesaka: "High efficiency hot electron transport in GaInAs/InP hot electron transistor grown by OMVPE" Electron.Lett.25. 704-705 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] T.Kikukawa: "Switching operation in OMVPE grown GaInAs/InP MQW intersectional optical switch structures" IEEE Photonics Technology Letters. 1. 126-128 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] E.Inamura: "Wet chemical etching for ultra fine periodic structures;rectangular InP corrugations of 70nm pitch and 100nm depth" Jpn.J.Appl.Phys.28. 2193-2196 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Kurshima: "Theoretical study of electron wave diffraction caused by transverse potential grating-effect of incident angle" IEEE J.Quantum Electron.25. 2350-2356 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Y.Miyamoto: "Observation of quantum coherence properties of hot electron" IEEE Trans.Electron Devices. 36. 2620 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Furuya: "Proposal of electron diffraction transistor" Trans. IEICE of Japan, 71, 286-288, 1988.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] M.Cao: "GaInAsP/InP single-quantum-well (SQW) laser with wire-like active region towards quantum wire laser" Electron. Lett., 24, 824-825, 1988.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Furuya: "Theoretical properties of electron wave diffraction due to a transversally periodic structure in semiconductor" IEEE J. Quantum Electron., 24, 1652-1658, 1988.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Furuya: "Electron wave diffraction by nanometer grating and its application for high-speed transistors" J. Vac. Sci. Technol., B6, 1845-1848, 1988.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Y.Miyamoto: "OMVPE conditions for GaInAs/InP heterointerfaces and superlattices" J. Cryst. Growth, 93, 353-538, 1988.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] P.Daste: "Fabrication technique for GaInAsP/InP quantum wire structure grown by LP-MOVPE" J. Cryst. Growth, 93, 365-369, 1988.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] E.Inamura: "Very fine corrugations formed on InP by wet chemical etching and electron beam lithography" Electron. Lett., 25, 238-240, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Furuya: "Theoretical characteristics of electron diffraction transistor" Trans. IEICE of Japan, E72 307-309, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Uesaka: "High efficiency hot electron transport in GaInAs/InP hot electron transistor grown by OMVPE" Electron. Lett., 25, 704-705, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] T.Kikukawa: "Switching operation in OMVPE grown GaInAs/InP MQW intersectional optical switch structures" IEEE Photo. Tech. Lett., 1, 126-128, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] E.Inamura: "Wet chemical etching for ultra fine periodic structures; rectangular InP corrugations of 70nm pitch and 100nm depth" Jpn. J. Appl. Phys., 28, 2193-2193, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Kurishima: "Theoretical study of electron wave diffraction caused by transverse potential grating -effect of incident angle" IEEE J. Quantum Electron., 25, 2350-2356, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Y.Miyamoto: "Observation of quantum coherence properties of hot electron" IEEE Trans. Electron Devices, 36, 2620, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] M.Aoki: "1.5mu m GaInAsP/InP Distributed Reflector (DR) Laser with High-Low Reflection Grating Structure" Electron. Lett., 25, 1650-1651, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] M.Cao: "Lasing action in GaInAs/GaInAsP quantum-wire structure" Trans. IEICE of Japan, E73, 63-70, 1990.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Furuya: "Possibility of high speed device on electron wave principle" J. Cryst. Growth, 98, 234-242, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] Y.Miyamoto: "Wet chemical etching" Oyo-Buturi, 58, 1383-1384, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] K.Furuya: "Electron Wave Device" J. IEICE, 72, 994-996, 1989.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1989 Final Research Report Summary
  • [Publications] M.Aoki: "1.5μm GaInAsP/InP Distributed Reflector(DR)Laser with High-Low Reflection Grating Structure" Electron.Lett.25. 1650-1651 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] M.Cao: "Lasing action in GaInAs/GaInAsP quantum-wire structure" Trans.IEICE of Japan. E73. 63-70 (1990)

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Furuya: "Possibility of high speed device on electron wave principle" J.Cryst.Growth. 98. 234-242 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] 宮本恭幸: "化学エッチング" 応用物理. 58. 1383-1384 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] 古屋一仁: "電子波デバイス" 電子情報通信学会誌. 72. 994-996 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Furuya: "Theoretical characteristics of electron diffraction transistor" Trans.IEICE of Japan. E72. 307-309 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Uesaka: "High efficiency hot electron transport in GaInAs/InP hot electron transistor grown by OMVPE" Electron.Lett.1. 126-128 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] E.Inamura: "Wet chemical etching for ultra fine periodic structures;rectangular InP corrugations of 70nm pitch and 100nm depth" Jpn.J.Appl.Phys.28. 2193-2196 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Kurshima: "Theoretical study of electron wave diffraction caused by transverse potential grating -effect of incident angle" IEEE J.Quantum Electron.25. 2350-2356 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] Y.Miyamoto: "Observation of quantum coherence properties of hot electron" IEEE Trans.Electron Devices. 36. 2620 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] K.Furuya: IEEE Journal of Quantum Electronics. 24. 1652-1658 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] K.Furuya: The Trausactions of The IEICE. E71. 286-288 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] K.Furuya: Journal of Vacuum Science and Technology. B6. 1845-1848 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] P.Dast'e: Journal of Crystal Growth. 93. 365-369 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] Y.Miyamoto: Journal of Crystal Growth. 93. 353-358 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] K.Furuya: Japanese Journal of Applied Physics. 28. 303-304 (1989)

    • Related Report
      1988 Annual Research Report
  • [Publications] E.Inamura: Electronics Letters. 25. 238-240 (1989)

    • Related Report
      1988 Annual Research Report
  • [Publications] K.Furuya: The 32nd International Symposium on Electron,Ion,and Photon Beaws,1988,May31-June3,Florida. G7. (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] K.Furuya: Second Optoelectronics Conference(OEC'88)Technical Digest,Oct,1988,Tokyo. 184-185 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] K.Furuya: Abstract of US-Japan Seminar on Alloy Semiconductor Physics and Electronics,Oct.Hawaii. (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] 古屋一仁: 電子情報通信学会電子デバイス研究会技術研究報告. 88. 39-46 (1988)

    • Related Report
      1988 Annual Research Report
  • [Publications] 木下聡: 東京工業大学超高速エレクトロニクス第2回研究報告会. 52-55

    • Related Report
      1988 Annual Research Report
  • [Publications] 栗島賢二: 平成元年春季応用物理学会学術講演会. (1989)

    • Related Report
      1988 Annual Research Report
  • [Publications] 上坂勝己: 平成元年春季応用物理学会学術講演会. (1989)

    • Related Report
      1988 Annual Research Report
  • [Publications] 稲村悦子: 平成元年春季応用物理学会学術講演会. (1989)

    • Related Report
      1988 Annual Research Report
  • [Publications] 古屋一仁: 平成元年電子情報通信学会全国大学. (1989)

    • Related Report
      1988 Annual Research Report

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Published: 1988-04-01   Modified: 2016-04-21  

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