プラズマ界面相互作用のナノスケール解析

• Project Area: Creation of Science of Plasma Nano-Interface Interactions
• Project/Area Number: 24110711
• Research Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Osaka University
• Principal Investigator: 浜口 智志 大阪大学, 工学(系)研究科(研究院), 教授 (60301826)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥15,600,000 (Direct Cost: ¥12,000,000、Indirect Cost: ¥3,600,000); Fiscal Year 2013: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000); Fiscal Year 2012: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
• Keywords: プラズマ / ナノ界面 / 分子動力学シミュレーション / プラズマ表面相互作用 / イオンビーム / 反応性イオンエッチング / 反応性エッチング

Research Abstract

本研究は、プラズマ照射下という極めて強い非平衡状態における物質表面・界面近傍のナノスケールの自発的構造形成機構を、その構造形成とナノ界面の近傍の「揺らぎ」との関係から、原子レベルシミュレーションを用いて明らかにすることを目的とする。我々は、平成２２・２３年度の本領域公募研究の支援を受け、半導体製造糧におけるゲートエッチングプロセスで発生するシリコン・リセスと呼ばれる、ゲート酸化膜を通しての基板シリコンの酸化が、プラズマから入射される水素イオンによる増速酸化に起因するものであることを実験的に立証した。本研究では、これらの研究成果を発展させ、分子動力学（MD） シミュレーションを用いて、増速酸化の特徴を詳細に解明した。シミュレーションでは、軽い水素イオンが、一定の入射エネルギーでシリコン基板に入射する際、基板表面近傍に存在する酸素原子が、入射水素原子との衝突により移動する位置を時間（水素イオン注入量）の関数と求め、その運動が、非熱的拡散に対応することを明らかにし、また、Einstein の関係式により、実効的な拡散係数を水素イオン入射エネルギーの関数として求めた。更に、過去に我々が行ったダイヤモンドライクカーボン（DLC）のsp3　構造形成の研究を発展させ、Ir など、炭素とは異なる基板上に結晶ダイヤモンドを成長（ヘテロエピタキシャル成長）させる手法として知られる「基板バイアス核発生法（Bias Enhanced Nucleation 法: BEN 法）」の表面反応の解析も併せて行った。BEN法で用いられる実験条件下で、我々のイオンビーム入射装置（マルチビーム装置）を用いて、Ir基板表面に炭素（Ｃ）イオンビームを入射し、かつ、表面解析を行った。この実験により、Ir基板内部から表面にＣ元素が析出する過程が明らかとなり、Ir基板への高エネルギーＣイオン照射におけるダイヤモンド核形成機構を推定する重要な手掛かりが得られた。

Current Status of Research Progress

Reason

25年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

25年度が最終年度であるため、記入しない。

Research Products

• [Journal Article] on beam experiments for the study on plasma-surface interactions (2014)
  • Author(s): Kazuhiro Karahashi and Satoshi Hamaguchi
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 0
  • Peer Reviewed
• [Journal Article] Low energy indium or gallium ion implantations to SiO2 thin films for development of novel catalysts (2014)
  • Author(s): S. Yoshimura, M. Kiuchi, Y. Nishimoto, M. Yasuda, A. Baba, S. Hamaguchi
  • Journal Title: e-J. Surf. Sci. Nanotech. Volume: 12 Pages: 197-202
  • NAID: 120006955429
  • Peer Reviewed
• [Journal Article] Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas (2014)
  • Author(s): Keita Miyake, Tomoko Ito, Michiro Isobe, Kazuhiro Karahashi, Masanaga Fukasawa, Kazunori Nagahata, Tetsuya Tatsumi, Satoshi Hamaguchi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 53
  • NAID: 210000143490
  • Peer Reviewed
• [Journal Article] Dependence of catalytic properties of indium implanted SiO2 thin films on the film-substrate temperature during indium ion implantation (2013)
  • Author(s): S. Yoshimura, K. Ikuse, K. Kiuchi, Y. Kishimoto, M. Yasuda, A. Baba, and S. Hamaguchi
  • Journal Title: Nucl. Instrum. Meth. B Volume: 315 Pages: 222-226
  • Peer Reviewed
• [Journal Article] Quantum Cascade Laser (QCL) Absorption Spectroscopy with the Amplitude-to-Time Conversion (ATTC) Technique for Atmospheric-Pressure Plasmas (2013)
  • Author(s): Takayoshi Yumii, Noriaki Kimura, and Satoshi Hamaguchi
  • Journal Title: J. Appl. Phys. Volume: 113
  • Peer Reviewed
• [Journal Article] Surface Modification of Poly(methyl methacrylate) by Hydrogen-Plasma Exposure and Its Sputtering Characteristics by Ultraviolet Light Irradiation (2013)
  • Author(s): Satoru Yoshimura, Kazumasa Ikuse, Satoshi Sugimoto, Kensuke Murai, Kuniaki Honjo, Masato Kiuchi, and Satoshi Hamaguchi,
  • Journal Title: Jpn. J. Appl. Phys. Volume: 52
  • NAID: 210000142776
  • Peer Reviewed
• [Journal Article] ポリメタクリル酸メチル樹脂の水素プラズマ暴露と低エネルギーアルゴンイオンビームによるエッチング (2013)
  • Author(s): 吉村智, 幾世和将, 杉本敏司, 村井健介, 木内正人, 浜口智志
  • Journal Title: J. Vac. Soc. Jpn. Volume: 56 Pages: 129-132
  • Peer Reviewed
• [Journal Article] Grid-pattern formation of extracellular matrix on silicon by low-temperature atmospheric-pressure plasma jets for neural network biochip fabrication (2013)
  • Author(s): Ayumi Ando, Hidetaka Uno, Tsuneo Uris, and Satoshi Hamaguchi
  • Journal Title: Appl. Surf. Sci. Volume: 276
  • Peer Reviewed
• [Journal Article] Characteristics of silicon etching by silicon chloride ions (2013)
  • Author(s): Tomoko Ito, Kazuhiro Karahashi, Song-Yun Kang, and Satoshi Hamaguchi,
  • Journal Title: J. Vac. Sci. Technol. A Volume: 31
  • NAID: 120006955427
  • Peer Reviewed
• [Journal Article] Oxidation of Nitric Oxide by Atmospheric Pressure Plasma in a Resonant Plasma Reactor (2013)
  • Author(s): Takayoshi Yumii, Takashi Yoshida，Kyoji Doi，Noriaki Kimura, and Satoshi Hamaguchi
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 46
  • Peer Reviewed
• [Journal Article] Characteristics of silicon etching by silicon chloride ions (2013)
  • Author(s): Tomoko Ito, Kazuhiro Karahashi, Song-Yun Kang, and Satoshi Hamaguchi
  • Journal Title: J. Vac. Sci. Technol. A. Volume: 31
  • NAID: 120006955427
  • Peer Reviewed
• [Journal Article] Efficient modification of the surface properties of interconnected porous hydroxyapatite by low-pressure low-frequency plasma treatment to promote its biological performance (2013)
  • Author(s): Dae-Sung Lee, Yu Moriguchi, Akira Myoui, Hideki Yoshikawa and Satoshi Hamaguchi
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 45
  • Peer Reviewed
• [Journal Article] プラズマの医療応用 (2013)
  • Author(s): 浜口智志
  • Journal Title: パリティ Volume: 1月号 Pages: 16-17
  • Peer Reviewed
• [Journal Article] Chemically reactive species in liquids generated by atmospheric-pressure plasmas and their roles in plasma medicine (2013)
  • Author(s): Satoshi Hamaguchi
  • Journal Title: AIP Conf. Proc. Volume: 未定
  • NAID: 120006957321
  • Peer Reviewed
• [Journal Article] Sputtering yields and surface modification of poly(methyl methacrylate) (PMMA) by low-energy Ar+/CF3+ ion bombardment with vacuum ultraviolet (VUV) photon irradiation (2012)
  • Author(s): S. Yoshimura, Y. Tsukazaki, M. Kiuchi, S. Sugimoto, S. Hamaguchi,.
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 45
  • Peer Reviewed
• [Journal Article] Sputtering yields of magnesium hydroxide [Mg(OH)2] by noble-gas ion bombardment (2012)
  • Author(s): Kazumasa Ikuse, Satoru Yoshimura, Masato Kiuchi, Masaharu Terauchi, Mikihiko Nishitani, and Satoshi Hamaguch
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 45
  • Peer Reviewed
• [Journal Article] Microcavity array plasma system for remote chemical processing at atmospheric pressure (2012)
  • Author(s): Dae-Sung Lee, Satoshi Hamaguchi, Osamu Sakai, Sung-Jin Park and J Gary Eden
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 45
  • Peer Reviewed
• [Journal Article] Si damage due to oblique-angle ion impact relevant for vertical gate etching processes (2012)
  • Author(s): Tomoko Ito, Kazuhiro Karahashi, Song-Yun Kang, and Satoshi Hamaguchi,
  • Journal Title: Jpn. J. Appl. Phys. Volume: 51
  • NAID: 210000141076
  • Peer Reviewed
• [Journal Article] Dependence of catalytic properties of Indium-implanted SiO2 thin films on the energy and dose of incident Indium ions (2012)
  • Author(s): S. Yoshimura, M. Kiuchi, Y. Nishimoto, M. Yasuda, A. Baba, S. Hamaguchi
  • Journal Title: Thin Solid Films Volume: 520 Pages: 4894-4897
  • Peer Reviewed
• [Journal Article] Sputtering yields of CaO, SrO, and BaO by monochromatic noble gas ion bombardment (2012)
  • Author(s): S. Yoshimura, K. Hine, M. Kiuchi, J. Hashimoto, M. Terauchi, Y. Honda, M.Nishitani, and S. Hamaguchi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 51
  • NAID: 210000072700
  • Peer Reviewed
• [Journal Article] Low energy metal ion beam production with a modified Freeman-type ion source for development of novel catalysts (2012)
  • Author(s): S. Yoshimura, M. Kiuchi, Y. Nishimoto, M. Yasuda, A. Baba, S. Hamaguchi
  • Journal Title: e-J. Surf. Sci. Nanotech. Volume: 10 Pages: 139-144
  • Peer Reviewed
• [Presentation] Nano-scale damage formation during plasma etching analysed by multi-beam experiments and molecular dynamics (MD) simulation (2014)
  • Author(s): Satoshi Hamaguchi
  • Organizer: The 9th EU-Japan Joint Symposium on Plasma Processing (JSPP2014)/ EU COST MP1101 Workshop on Atmospheric Plasma Processes and Sources
  • Place of Presentation: Bohinjska Bistrica and Lake Bohinj, Slovenia
  • Invited
• [Presentation] Computational and experimental atomic-scale analyses of surface damage formation in reactive ion etching (RIE) processes for Si based materials, (2014)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 8th International Conference on Reactive Plasmas / 31st Symposium on Plasma Processing (ICRP-8/SPP-31)
  • Place of Presentation: Fukuoka International Congress Center, Fukuoka, Japan
  • Invited
• [Presentation] Ta sputtering by energetic Ar+, CO+ and N+ ion injections at oblique angles (2014)
  • Author(s): Hu Li
  • Organizer: 8th International Conference on Reactive Plasmas / 31st Symposium on Plasma Processing (ICRP-8/SPP-31)
  • Place of Presentation: Fukuoka International Congress Center, Fukuoka, Japan
• [Presentation] Mask etching characteristics for Nanoscale fabrication of MRAM structures (2014)
  • Author(s): Hu Li
  • Organizer: nternational Workshop on Atomically Controlled Fabrication Technology
  • Place of Presentation: Nakanoshima Center, Osaka, Japan
• [Presentation] Ion and Radical Beam Studies on Plasma Etching Mechanisms (2014)
  • Author(s): Satoshi Hamaguchi
  • Organizer: SEMICON Korea 2014
  • Place of Presentation: COEX, Seoul, Korea
  • Invited
• [Presentation] Effects of Hydrogen during Si Etching Processes by Hydrogen Halide Plasma (2014)
  • Author(s): Tomoko Ito
  • Organizer: International Symposium on Non-equilibrium Plasma and Complex-System Sciences (IS-NPCS)
  • Place of Presentation: Osaka, Japan
• [Presentation] Molecular dynamics simulation of silicon surface oxidation by O2 gas cluster beams (2014)
  • Author(s): Kohei Mizotani
  • Organizer: International Symposium on Non-equilibrium Plasma and Complex-System Sciences (IS-NPCS)
  • Place of Presentation: Osaka, Japan
• [Presentation] Surface analyses for MRAM etching processes (2014)
  • Author(s): Hu Li
  • Organizer: International Symposium on Non-equilibrium Plasma and Complex-System Sciences (IS-NPCS)
  • Place of Presentation: Osaka, Japan
• [Presentation] Beam studies of plasma etching (2014)
  • Author(s): Kazuhiro Karahashi
  • Organizer: International Symposium on Non-equilibrium Plasma and Complex-System Sciences (IS-NPCS)
  • Place of Presentation: Osaka, Japan
• [Presentation] プラズマ科学技術の建築分野での活用 (2013)
  • Author(s): 浜口智志
  • Organizer: 建築研究開発コンソーシアム（CBRD） テクニカルフォーラム
  • Place of Presentation: 晴海トリトンスクエア、東京都中央区
  • Year and Date: 2013-04-19
  • Invited
• [Presentation] 低エネルギーインジウム照射SiO2の触媒効果の基板温度依存性 (2013)
  • Author(s): 吉村智
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学神奈川県厚木市
  • Year and Date: 2013-03-27
• [Presentation] ハイドロフルオロカーボン（HFC）プラズマによるSiNエッチングにおける表面ポリマー形成過程の解析 (2013)
  • Author(s): 三宅啓太
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学神奈川県厚木市
  • Year and Date: 2013-03-27
• [Presentation] 酸素ガスクラスタービーム照射によるシリコン表面酸化プロセスの分子動力学シミュレーション (2013)
  • Author(s): 溝谷浩平
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学神奈川県厚木市
  • Year and Date: 2013-03-27
• [Presentation] Taマスクの形状制御のための斜め入射イオンによるスパッタリング解析 (2013)
  • Author(s): 李虎
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学神奈川県厚木市
  • Year and Date: 2013-03-27
• [Presentation] 磁性体エッチングプロセスにおけるN+イオン照射効果 (2013)
  • Author(s): 村木裕
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学神奈川県厚木市
  • Year and Date: 2013-03-27
• [Presentation] プラズマ・ラジカルの物理とその医療応用 (2013)
  • Author(s): 浜口智志
  • Organizer: 日本物理学会第６８回年次大会
  • Place of Presentation: 広島大学東広島キャンパス 広島県東広島市
  • Year and Date: 2013-03-26
  • Invited
• [Presentation] プラズマエッチングにおけるナノメートル表面層反応機構の解明 (2013)
  • Author(s): 伊藤智子
  • Organizer: 第１５６回 応用物理学会シリコンテクノロジー分科会研究会：「プラズマプロセスの最前線」
  • Place of Presentation: 東京大学本郷キャンパス、東京都文京区
  • Year and Date: 2013-02-15
  • Invited
• [Presentation] Numerical Analysis of Damage Formation in Vertical-Walls Gate Etching Processes (2013)
  • Author(s): 溝谷浩平
  • Organizer: 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
  • Place of Presentation: 名古屋大学、愛知県名古屋市
  • Year and Date: 2013-01-28
• [Presentation] Plasma surface modification of porous hydroxyapatite artificial bones (2013)
  • Author(s): Yu Moriguchi
  • Organizer: Orthopaedic Research Society (ORS) 2013 Annual Meeting
  • Place of Presentation: San Antonio, TX, USA
  • Year and Date: 2013-01-26
• [Presentation] 大気圧プラズマにより誘起される水中における活性酸素・活性窒素種の生成 (2013)
  • Author(s): 金澤龍也
  • Organizer: 第30回プラズマプロセシング研究会
  • Place of Presentation: アクトシティ―浜松 静岡県浜松市
  • Year and Date: 2013-01-21
• [Presentation] ゲートエッチングプロセスにおけるハロゲン化シリコンイオン (SiFx+,SiClx+ )による表面反応 (2013)
  • Author(s): 伊藤智子
  • Organizer: 第30回プラズマプロセシング研究会
  • Place of Presentation: アクトシティ―浜松 静岡県浜松市
  • Year and Date: 2013-01-21
• [Presentation] Needs for atomic and molecular database in modern plasma processing (2013)
  • Author(s): Satoshi Hamaguchi
  • Organizer: the Japan-Australia Commemorative Workshop (JAWS25)
  • Place of Presentation: University House, Australian National University, Canberra, Australia
  • Invited
• [Presentation] Numerical simulation of enhanced oxygen diffusion in silico (2013)
  • Author(s): Kohei Mizotani
  • Organizer: the 12th Asia Pacific Physics Conference (APPC12) and Asia-Europe Physics Summit (ASEPS)
  • Place of Presentation: International Conference Hall, Makuhari Messe, Chiba, Japan,
• [Presentation] Effects of hydrogen on plasma etching for silicon and silicon nitride (2013)
  • Author(s): Tomoko Ito
  • Organizer: 21st in International Symposium on Plasma Chemistry
  • Place of Presentation: Cairns, Australia
• [Presentation] Selective etching of Ni over Ta or TaOx by N+ and CO+ ion irradiation (2013)
  • Author(s): Kazuhiro Karahashi
  • Organizer: 35th International Symposium on Dry Process (DPP2013)
  • Place of Presentation: Ramada Plaza Jeju Hotel, Korea
• [Presentation] Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas (2013)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 35th International Symposium on Dry Process (DPP2013)
  • Place of Presentation: Ramada Plaza Jeju Hotel, Korea
• [Presentation] Sputtering Yields and Selectivity of Magnetic Materials by Chemically Reactive Plasmas (2013)
  • Author(s): Hu Li
  • Organizer: American Vacuum Society (AVS) 60 th International Symposium & Exhibition,
  • Place of Presentation: Long Beach, California
• [Presentation] Possible Si Damage Formation and Redeposition in Vertical Gate Etching Processes by HBr Plasmas (2013)
  • Author(s): Yu Muraki
  • Organizer: American Vacuum Society (AVS) 60 th International Symposium & Exhibition
  • Place of Presentation: Long Beach, California
• [Presentation] Mechanisms of Silicon Nitride (SiN) Etching by Hydrofluorocarbon (HFC) Plasmas (2013)
  • Author(s): Keita Miyake
  • Organizer: American Vacuum Society (AVS) 60 th International Symposium & Exhibition
  • Place of Presentation: Long Beach, California
• [Presentation] Numerical Simulation of Oxidation Process in Silicon by O2 Gas Cluster Beam (2013)
  • Author(s): Kohei Mizotani
  • Organizer: American Vacuum Society (AVS) 60 th International Symposium & Exhibition
  • Place of Presentation: Long Beach, California
• [Presentation] Beam Studies of Plasma Etching Reactions (2013)
  • Author(s): Kazuhiro Karahashi
  • Organizer: American Vacuum Society (AVS) 60 th International Symposium & Exhibition
  • Place of Presentation: Long Beach, California
  • Invited
• [Presentation] Beam Studies of Plasma Surface Interaction (2013)
  • Author(s): Kazuhiro Karahashi,
  • Organizer: Tenth International Conference on Flow Dynamics(ICFD)
  • Place of Presentation: Tohoku University, Sendai, Miyagi, Japan
• [Presentation] Recent progress of Molecular Dynamics (MD) simulation techniques for the analysis of plasma-surface interaction (2013)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 8th Asia-Pacific International Symposium on the Basics and Applications of Plasma Technology (APSPT 2013)
  • Place of Presentation: National Chiao Tung University, Hsinchu, Taiwan
  • Invited
• [Presentation] 半導体デバイス加工プロセスにおける表面ダメージ層形成機構の数値解析 (2013)
  • Author(s): 溝谷浩平
  • Organizer: 新学術領域「プラズマとナノ界面の相互作用に関する学術基盤の創成」平成2５年度第１回全体会議
  • Place of Presentation: 湘南国際村センター国際会議場、神奈川県三浦郡
• [Presentation] 高エネルギー水素イオン入射によるSi表面の増殖酸化 (2013)
  • Author(s): 浜口智志
  • Organizer: 第7４回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス、 京都府京田辺市
  • Invited
• [Presentation] 大気圧・液中プラズマ照射によるバイオ・ナノプロセス (2012)
  • Author(s): 浜口智志
  • Organizer: 応用物理理学会励起ナノプロセス研究会主催第８回励起ナノプロセス研究会
  • Place of Presentation: 大阪大学中之島センター大阪市北区
  • Year and Date: 2012-12-17
  • Invited
• [Presentation] 大気圧放電に接する液中に生成される活性酸素・活性窒素 (2012)
  • Author(s): 浜口智志
  • Organizer: 2012年度原子分子データ応用フォーラムセミナー：高Zプラズマの原子過程と、酸素分子が関係する原子分子過程とその応用
  • Place of Presentation: 核融合科学研究所岐阜県土岐市
  • Year and Date: 2012-12-11
  • Invited
• [Presentation] プラズマ医療研究の最前線 (2012)
  • Author(s): 浜口智志
  • Organizer: プラズマ・核融合学会第29回年会
  • Place of Presentation: クローバープラザ 福岡県春日市
  • Year and Date: 2012-11-17
  • Invited
• [Presentation] 量子カスケードレーザーを用いた大気圧RFプラズマリアクター内の赤外吸収分光計測 (2012)
  • Author(s): 弓井孝佳
  • Organizer: プラズマ・核融合学会第29回年会
  • Place of Presentation: クローバープラザ 福岡県春日市
  • Year and Date: 2012-11-17
• [Presentation] Evaluation of sputtering yields of silicon nitride by fluoro/hydrofluorocarbon ions by molecular dynamics (MD) simulations:modeling of thermal relaxation processes for polymer formation (2012)
  • Author(s): Keita Miyake
  • Organizer: International Symposium on Dry Process(DPS)
  • Place of Presentation: U. Tokyo, Tokyo,Japan
  • Year and Date: 2012-11-15
• [Presentation] Etching reaction of CoFeB by carbon monoxide /methyl alcohol based plasmas (2012)
  • Author(s): Kazuhiro Karahashi
  • Organizer: International Symposium on Dry Process(DPS)
  • Place of Presentation: U. Tokyo, Tokyo,Japan
  • Year and Date: 2012-11-15
• [Presentation] 低エネルギーイオンビーム照射によるPMMAエッチングイールドへの紫外線照射および水素プラズマ暴露の影響 (2012)
  • Author(s): 吉村智
  • Organizer: 第53回真空に関する連合講演会
  • Place of Presentation: 甲南大学ポートアイランドキャンパス
  • Year and Date: 2012-11-14
• [Presentation] Roles of hydrogen for hydrofluorocarbon (HFC) plasma etchingof silicon nitride (SiN) (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: American Vacuum Society (AVS) 59th International Symposium Exhibition
  • Place of Presentation: Tampa, FＬ ＵＳＡ
  • Year and Date: 2012-10-28
• [Presentation] Analysis of target oxidation in reactive sputter deposition processes of silicon dioxide (2012)
  • Author(s): Kazuhiro Hoshino
  • Organizer: American Vacuum Society (AVS) 59th International Symposium Exhibition
  • Place of Presentation: Tampa, FＬ ＵＳＡ
  • Year and Date: 2012-10-28
• [Presentation] Etching reaction of CoFeB by carbon monoxide /methyl alcohol based plasmas (2012)
  • Author(s): Kazuhiro Karahashi
  • Organizer: American Vacuum Society (AVS) 59th International Symposium Exhibition
  • Place of Presentation: Tampa, FＬ ＵＳＡ
  • Year and Date: 2012-10-28
• [Presentation] Molecular Dynamic Simulation of Possible Damage Formation at Vertical Walls of finFET Devices during Plasma Etching Processes (2012)
  • Author(s): Kazuhiro. Mizotani
  • Organizer: American Vacuum Society (AVS) 59th International Symposium Exhibition
  • Place of Presentation: Tampa, FＬ ＵＳＡ
  • Year and Date: 2012-10-28
• [Presentation] Reactive etching or deposition properties of silicon halide ions in gate etching processes (2012)
  • Author(s): Tomoko Ito
  • Organizer: American Vacuum Society (AVS) 59th International Symposium Exhibition
  • Place of Presentation: Tampa, FＬ ＵＳＡ
  • Year and Date: 2012-10-28
• [Presentation] Low energy metal iom beam injection to SiO2 thin films for develop ment of novel catalysts (2012)
  • Author(s): Sstoshi Yoshimura
  • Organizer: 25th International Conference on Atomic Collisions in Solids (ICACS-25), (21-25 October, 2012) 8th International Symposium on Swift Heavy Ions in Matter (SHIM2012)
  • Place of Presentation: Kyoto University, Kyoto,Japan
  • Year and Date: 2012-10-24
• [Presentation] Plasma Biomedicine in Orthopedics (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: Workshop on Plasma Biomedicine, 65th Annual Gaseous Electronics Conference
  • Place of Presentation: Austin, TX ＵＳＡ
  • Year and Date: 2012-10-22
  • Invited
• [Presentation] Chemically reactive species in liquids generated by atmospheric-pressure plasmas and their roles in plasma medicine (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 8th International Conference on Atomic and Molecular Data and Their Applications (ICAMDATA-8)
  • Place of Presentation: National Institute of Standards and Technology (NIST), Gaithersburg, MD,USA
  • Year and Date: 2012-09-30
  • Invited
• [Presentation] Ion beam studies on plasma-surface interactions SRC (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: Semiconductor Research Corporation (SRC) NMS(Nanomanufacturing Sciences)Patterning Annual Review
  • Place of Presentation: Chicago, Il, USA
  • Year and Date: 2012-09-25
• [Presentation] Ion-bombardment-induced diffusion and drift of impurity atomsin solids (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: IUMRS (International Union of Materials Research Societies)-International Conference on Electronic Materials (IUMRS-ICEM 2012)
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2012-09-23
  • Invited
• [Presentation] Study on plasma-surface interaction in LIA336 (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: CNRS-LIA336 Workshop
  • Place of Presentation: Kyushu University, Hakozaki Campus, Japan
  • Year and Date: 2012-09-21
  • Invited
• [Presentation] Silicon Etching Characteristics by Ions of Desorbed Species (SiClx+) (2012)
  • Author(s): 李虎
  • Organizer: 第6 回プラズマエレクトロニクスインキュベーションホール
  • Place of Presentation: 国立中央青少年交流の家、静岡県名御殿場市
  • Year and Date: 2012-09-19
• [Presentation] 磁気抵抗メモリ(MRAM)高集積化のための選択性エッチング反応の研究 (2012)
  • Author(s): 村木裕
  • Organizer: 第6 回プラズマエレクトロニクスインキュベーションホール
  • Place of Presentation: 国立中央青少年交流の家、静岡県名御殿場市
  • Year and Date: 2012-09-19
• [Presentation] プラズマエッチングによるFinFET側壁ダメージ層形成機構の数値解析 (2012)
  • Author(s): 溝谷浩平
  • Organizer: 第6 回プラズマエレクトロニクスインキュベーションホール 2012年9月19日
  • Place of Presentation: 国立中央青少年交流の家、静岡県名御殿場市
  • Year and Date: 2012-09-19
• [Presentation] 低圧酸素プラズマを用いた人工骨表面処理 (2012)
  • Author(s): 斉宮大
  • Organizer: 第6 回プラズマエレクトロニクスインキュベーションホール 2012年9月19日
  • Place of Presentation: 国立中央青少年交流の家、静岡県名御殿場市
  • Year and Date: 2012-09-19
• [Presentation] 希ガスイオン照射による水酸化マグネシウムのスパッタ率測定 (2012)
  • Author(s): 幾世和将
  • Organizer: 第73回応用物理学学術講演会
  • Place of Presentation: 松山大学、愛媛県松山市
  • Year and Date: 2012-09-11
• [Presentation] SiFx+イオン照射によるSi, Si3N4およびSiO2エッチング反応解析 (2012)
  • Author(s): 伊藤智子
  • Organizer: 第73回応用物理学学術講演会
  • Place of Presentation: 松山大学、愛媛県松山市
  • Year and Date: 2012-09-11
• [Presentation] 大気圧プラズマにより水中に誘起される化学種の反応シミュレーション (2012)
  • Author(s): 金澤龍也
  • Organizer: 第73回応用物理学学術講演会
  • Place of Presentation: 松山大学、愛媛県松山市
  • Year and Date: 2012-09-11
• [Presentation] メタノールプラズマ中のイオン照射によるCoFeB エッチング反応(2) (2012)
  • Author(s): 唐橋一浩
  • Organizer: 第73回応用物理学学術講演会
  • Place of Presentation: 松山大学、愛媛県松山市
  • Year and Date: 2012-09-11
• [Presentation] ビーム表面相互作用分子動力学(MD)シミュレーションにおける基板熱緩和過程の解析 (2012)
  • Author(s): 三宅啓太
  • Organizer: 第73回応用物理学学術講演会
  • Place of Presentation: 松山大学、愛媛県松山市
  • Year and Date: 2012-09-11
• [Presentation] プラズマエッチングにおけるゲートダメージ層形成機構の数値解析 (2012)
  • Author(s): 溝谷浩平
  • Organizer: 第73回応用物理学学術講演会
  • Place of Presentation: 松山大学、愛媛県松山市
  • Year and Date: 2012-09-11
• [Presentation] プラズマ技術の紹介と現況 (2012)
  • Author(s): 浜口智志
  • Organizer: 建築研究開発コンソーシアム(CBRD) プラズマの建築利用研究会第一回研究会
  • Place of Presentation: 晴海区民館、東京都中央区
  • Year and Date: 2012-08-26
• [Presentation] Plasma treatment of artificial bones (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 2nd International Symposium for Plasma Biosciences (SPB2012)
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2012-08-12
  • Invited
• [Presentation] Analyses of plasma-surface interactions by numerical simulations and multi-beam experiments (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 4th International Conference on Microelectronics and Plasma Technology 2012 (ICMAP2012)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2012-07-04
  • Invited
• [Presentation] Oxidization of Nitric Oxide by Atmospheric Plasmas Generated by a Radio-Frequency (RF) driven High Q-factor Resonator (2012)
  • Author(s): Takayoshi Yumii
  • Organizer: 4th International Conference on Microelectronics and Plasma Technology 2012 (ICMAP2012)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2012-07-04
• [Presentation] Plasma Surface Modification of Artificial Bones for Bone Regeneration (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 4th International Conference on Plasma Medicine
  • Place of Presentation: Orleacute;ans, France
  • Year and Date: 2012-06-17
• [Presentation] Cell proliferation enhanced by atmospheric-pressure plasma application for cells of interest in orthopedics (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: 4th International Conference on Plasma Medicin
  • Place of Presentation: Orleacute;ans, France
  • Year and Date: 2012-06-17
• [Presentation] Numerical Simulation of Reactive Species in Liquids in Contact with Atmospheric Pressure Plasmas (2012)
  • Author(s): Tatsuya Kanazawa
  • Organizer: 4th International Conference on Plasma Medicin
  • Place of Presentation: Orleacute;ans, France
  • Year and Date: 2012-06-17
• [Presentation] Numerical analysis of nano-second pulsed discharge near atmospheric pressure (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: International Workshop “Physics of Microplasmae
  • Place of Presentation: Bochum, Germany
  • Year and Date: 2012-05-30
  • Invited
• [Presentation] ハイドロキシアパタイト人工骨に対する低温プラズマ処理 (2012)
  • Author(s): 森口悠
  • Organizer: 第 6 回連通多孔体セラミックス学術研究会
  • Place of Presentation: 京都センチュリーホテル、京都府京都市
  • Year and Date: 2012-05-17
• [Presentation] Analyses of elementary ion-surface interactions for low-damage plasma etching processes (2012)
  • Author(s): Satoshi Hamaguchi
  • Organizer: Korean Physical Society (KPS) 2012 Spring Meeting
  • Place of Presentation: Daejeon Convention Center, Daejeon, Korea
  • Year and Date: 2012-04-25
  • Invited
• [Remarks] Hamaguchi Lab
  • URL: http://www.camt.eng.osaka-u.ac.jp/hamaguchi/frame1/index_frame.html
• [Remarks]
  • URL: http://www.camt.eng.osaka-u.ac.jp/hamaguchi/frame1/index_frame.html
• [Patent(Industrial Property Rights)] エッチング方法および装置 (2014)
  • Inventor(s): 唐橋一浩、浜口智志、瀬木利夫、松尾二郎、木下啓蔵、溝谷浩平
  • Industrial Property Rights Holder: 唐橋一浩、浜口智志、瀬木利夫、松尾二郎、木下啓蔵、溝谷浩平
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-041240
  • Filing Date: 2014-03-04
• [Patent(Industrial Property Rights)] バイオセラミックスを含む人工骨の改質方法と、その方法で改質された人工骨」 (2012)
  • Inventor(s): 浜口智志、吉川秀樹 他
  • Industrial Property Rights Holder: 浜口智志、吉川秀樹 他
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2012-085854
  • Filing Date: 2012-04-04