窒化物光半導体のフロンティア―材料潜在能力の極限発現―

2010 Fiscal Year Annual Research Report

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069013
• Research Institution: Ritsumeikan University
• Principal Investigator: 名西 やす之 立命館大学, 理工学部, 教授 (40268157)
• Keywords: 窒化物半導体 / 結晶成長 / 半導体物性 / 光デバイス / 紫外 / 赤外

Research Abstract

総括班として、領域代表者である名西が中心となり、各研究項目の総括者(A01:名西、A02:吉川、A03:天野、A04:岸野)との間において、研究項目間の連携の強化、調整を密に図り、領域全体の方針策定・立案・調整を、評価担当者の指導を仰ぎながら進めた。
年度末の成果報告会として、平成23年3月1日(火)-2日(水) 長浜ロイヤルホテル(滋賀県長浜市)において、平成22年度研究成果報告会を開催した。13件の計画研究、7件の公募研究、あわせて20件の研究課題からの成果報告を行った。今回が最終年度の報告会となるため、各研究代表者は、研究計画書の内容に基づき、特定領域研究開始当初のターゲット、領域内、グループ内での役割・分担、現在までの到達点、成果、国際的位置づけおよび今後の課題などについてまとめた報告を行った。また成果報告会の最後には、全体討論を行い、領域代表者、各項目代表者を中心として、5年間の特定領域としての成果のまとめ、今後の展開など総括を行った。
上記会議にあわせて、第9回(平成23年3月1日、2日)の総括班ミーティングを行い、総括班メンバー、評価担当者出席のもと、研究活動の総括、今後の報告活動の予定策定などを検討した。
対外活動としては、日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」(平成22年5月14日(金)～15日(土) 三重大学)を共催として開催し、関連研究成果の普及に努めた。

Research Products

• [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN (2011)
  • Author(s): K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
  • Journal Title: Appl.Phys.Lett. Volume: 98 Pages: 042104/1-3
  • Peer Reviewed
• [Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Journal Title: Proceedings of SPIE photonic West 2011 Volume: 7939 Pages: 793904
  • Peer Reviewed
• [Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure (2011)
  • Author(s): T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50 Pages: 04DH08(1-4)
  • Peer Reviewed
• [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers (2010)
  • Author(s): K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
  • Journal Title: phys.stat.sol.(a) Volume: 207 Pages: 1356-1360
  • Peer Reviewed
• [Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization (2010)
  • Author(s): T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
  • Journal Title: Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010) Pages: 92-95
  • Peer Reviewed
• [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN (2010)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50 Pages: 01AE02
  • Peer Reviewed
• [Journal Article] Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure (2010)
  • Author(s): J.Ibanez, A.Segura, F.J.Manjon, L.Artus, T.Yamaguchi, Y.Nanishi
  • Journal Title: Appl.Phys.Lett. Volume: 96 Pages: 201903/1-3
  • Peer Reviewed
• [Journal Article] Structural Anisotropy of Nonpolar and Semipolar InN Epitaxial Layers (2010)
  • Author(s): V.Darakchieva, M.-Y.Xie, N.Franco, F.Giuliani, B.Nunes, E.Alues, C.L.Hsiao, L.C.Chen, T.Yamaguchi, Y.Takagi, K.Kawashima, Y.Nanishi
  • Journal Title: J.Appl.Phys. Volume: 108 Pages: 073529/1-10
  • Peer Reviewed
• [Presentation] N極性及びIn極性のInN-MIS構造の作製と評価 (2011)
  • Author(s): 森本健太、三木彰、山口智弘、前田就彦、荒木努、名西〓之
  • Organizer: 2011年春季 第58回 応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学 神奈川県厚木市
  • Year and Date: 2011-03-24
• [Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証 (2011)
  • Author(s): 櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
  • Organizer: 2011年春季 第58回 応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学 神奈川県厚木市
  • Year and Date: 2011-03-24
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures (2011)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
  • Organizer: Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
  • Place of Presentation: Granada Spain
  • Year and Date: 2011-03-17
• [Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method (2011)
  • Author(s): T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
  • Organizer: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
  • Place of Presentation: Nagoya institute of technology, Aichi Japan
  • Year and Date: 2011-03-09
• [Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN (2011)
  • Author(s): T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
  • Place of Presentation: Nagoya institute of technology, Aichi Japan
  • Year and Date: 2011-03-07
• [Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: SPIE Photonic West 2011
  • Place of Presentation: San Francisco, CA USA
  • Year and Date: 2011-01-24
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Nano-Photonics (2010)
  • Author(s): Y.Nanishi
  • Organizer: 3rd GIST Information and Mechatronics Week 2010
  • Place of Presentation: Seoul Korea
  • Year and Date: 2010-12-02
• [Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価 (2010)
  • Author(s): 名西〓之、山口智広、王科、荒木努、Euijoon Yoon
  • Organizer: 応用物理学会九州支部学術講演会
  • Place of Presentation: 九州大学伊都キャンパス福岡県福岡市
  • Year and Date: 2010-11-27
• [Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長 (2010)
  • Author(s): 山下修平、山口智広、荒木努、名西〓之
  • Organizer: 平成22年 電気関係学会関西連合大会
  • Place of Presentation: 立命館大学キャンパス滋賀県草津市
  • Year and Date: 2010-11-14
• [Presentation] RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討 (2010)
  • Author(s): 荒木努、川島圭介、山口智広、名西〓之
  • Organizer: 2010年度 電子情報通信学会 レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 大阪大学中之島センター大阪府大阪市
  • Year and Date: 2010-11-11
• [Presentation] Recent Research Activities in Japan toward Nitride Semiconductor Opto-electronics Frontier (2010)
  • Author(s): Y.Nanishi
  • Organizer: Korea Optoelectronic Engineering Society
  • Place of Presentation: Seoul Korea
  • Year and Date: 2010-10-08
• [Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure (2010)
  • Author(s): T.Yamaguchi, Y.Nanishi
  • Organizer: 2010 International Coference on Solid State Devices and Materials
  • Place of Presentation: Tokyo Univ, Japan
  • Year and Date: 2010-09-24
• [Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy (2010)
  • Author(s): K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-23
• [Presentation] Raman scattering study of the temperature dependence of phonons in InN (2010)
  • Author(s): N.Domenech-Amador, L.Aruzs, R.Cusco, J.Ibanez, T.Yamaguchi, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Evidence of Rectification in InN pn Junctions (2010)
  • Author(s): N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Free Hole Concentration and Mobility in InN : Mg (2010)
  • Author(s): N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Unintentional incorporation of hydrogen in InN : diffusion kinetics and effect of surface orientation (2010)
  • Author(s): V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, L.Artus, D.Rogala, H.-W.Becker, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Wet Etching Process for InN Device Fabrication (2010)
  • Author(s): A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma (2010)
  • Author(s): T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Mg doped InN and search for holes (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-22
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida USA
  • Year and Date: 2010-09-21
• [Presentation] TEMを用いたDERI法ドープInNの極微構造評価 (2010)
  • Author(s): 坂本努、山口智広、岩本亮輔、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学 文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] DERI法を用いたInGaN成長と組成制御への試み (2010)
  • Author(s): 岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学 文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] InNデバイス作製プロセスへのウエットエッチングの適用 (2010)
  • Author(s): 三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学 文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] DERI法InGaN成長を用いた厚膜化への試み (2010)
  • Author(s): 上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
  • Organizer: 2010年(平成22年)秋季 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学 文教キャンパス長崎県長崎市
  • Year and Date: 2010-09-14
• [Presentation] Growth and Characterization of InN-Related Materials (2010)
  • Author(s): Y.Nanishi
  • Organizer: Rainbow Second Training Workshop
  • Place of Presentation: Madrid Spain
  • Year and Date: 2010-08-31
• [Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method (2010)
  • Author(s): T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 16th International Conference on Molecular Beam Epitaxy (MBE 2010)
  • Place of Presentation: Berlin Germany
  • Year and Date: 2010-08-26
• [Presentation] Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi, E.Yoon
  • Organizer: The second LED domestic conference
  • Place of Presentation: Seoul Korea
  • Year and Date: 2010-08-25
• [Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE (2010)
  • Author(s): T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
  • Organizer: The 16th International Conference on Crystal Growth (ICCG16)
  • Place of Presentation: Beijing China
  • Year and Date: 2010-08-09
• [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy (2010)
  • Author(s): F.J.Manjon, J.Ibanez, A.Segura, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
  • Organizer: 48th European High Pressure Research Group Conference (EHPRG)
  • Place of Presentation: Uppsala Sweden
  • Year and Date: 2010-07-26
• [Presentation] Forty years research toward compound semiconductor frontiers-Tributary road from GaAs to InN through GaN- (2010)
  • Author(s): Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺 静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Wet Etching by KOH for InN Device Fabrication (2010)
  • Author(s): A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺 静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE (2010)
  • Author(s): T.Yamaguchi, H.Umeda, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺 静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Characterization of Contact Resistance of Ti/Al/Ti/Au Ohmic Metal on N-polar and In-polar InN Films grown by RF-MBE (2010)
  • Author(s): K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
  • Organizer: 29th Electronic Materials Symposium (EMS29)
  • Place of Presentation: ラフォーレ修善寺 静岡県伊豆市
  • Year and Date: 2010-07-14
• [Presentation] Growth, Monitoring, P-type doping and MQW Structure Fabrication by DERI Method (2010)
  • Author(s): Y.Nanishi
  • Organizer: The international worskshop on modern and advanced phenomena in wurtzite semiconductors
  • Place of Presentation: Montpellier France
  • Year and Date: 2010-07-09
• [Presentation] Evidence of Free Holes in Mg Doped InN (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
  • Organizer: International Symposium on Growth of III-Nitrides 2010
  • Place of Presentation: Montpellier France
  • Year and Date: 2010-07-06
• [Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE (2010)
  • Author(s): T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
  • Organizer: International Symposium on Growth of III-Nitrides 2010
  • Place of Presentation: Montpellier France
  • Year and Date: 2010-07-06
• [Presentation] Electronic Materials Conference 2010 (EMC2010) (2010)
  • Author(s): K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
  • Organizer: Electronic Materials Conference 2010 (EMC2010)
  • Place of Presentation: Notre Dame, Indiana, USA
  • Year and Date: 2010-06-25
• [Presentation] Hydrogen in InN : Ubiquitous Phenomena in Molecular Beam Epitaxy Grown Material (2010)
  • Author(s): V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
  • Organizer: CIMTEC2010 (5th Forum on New Materials)
  • Place of Presentation: Montecatini Terme, Tuscany Italy
  • Year and Date: 2010-06-16
• [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy (2010)
  • Author(s): J.Ibanez, A.Segura, F.J.Manjon, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
  • Organizer: 2010 E-MRS Spring Meeting
  • Place of Presentation: Strasbourg France
  • Year and Date: 2010-06-10
• [Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization (2010)
  • Author(s): T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
  • Organizer: 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
  • Place of Presentation: Takamatsu symbol tower, Kagawa Japan
  • Year and Date: 2010-06-01
• [Presentation] Free-Charge Carrier Properties and Doping Mechanisms of Thin Films of InN and Related Alloys (2010)
  • Author(s): V.Darakchieva, M.Schubert, K.Lorenz, N.P.Barradas, E.Alves, T.Hofmann, B.Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
  • Organizer: 5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
  • Place of Presentation: Albany, New York USA
  • Year and Date: 2010-05-27
• [Presentation] Growth, Monitoring and InN/InGaN MQW Structure Fabrication by DERI Method (2010)
  • Author(s): Y.Nanishi, T.Yamaguchi
  • Organizer: IX International Conference of Polish Society for Crystal Growth
  • Place of Presentation: Gdansk-Sobieszewo Poland
  • Year and Date: 2010-05-25
• [Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method (2010)
  • Author(s): T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
  • Organizer: The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
  • Place of Presentation: Beijing China
  • Year and Date: 2010-05-18
• [Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断 (2010)
  • Author(s): 勝木拓郎、福本英太、山口智広、荒木努、名西〓之
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学 三重県三重市
  • Year and Date: 2010-05-15
• [Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用 (2010)
  • Author(s): 山口智広、荒木努、名西〓之
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学 三重県三重市
  • Year and Date: 2010-05-14
• [Presentation] Japan-Korea Joint Symposium (2010)
  • Author(s): Y.Nanishi
  • Organizer: Japan-Korea Joint Symposium
  • Place of Presentation: Daejeon Korea
  • Year and Date: 2010-04-21
• [Presentation] 窒化物光半導体フロンティア領域開拓の現状 (2010)
  • Author(s): 名西〓之
  • Organizer: LED総合フォーラム
  • Place of Presentation: 阿波銀ホール 徳島県徳島市
  • Year and Date: 2010-04-17
• [Presentation] Optical Hall Effect in InN : Bulk Doping Mechanism and Surface Electron Accumulation Properties (2010)
  • Author(s): V.Darakchieva, M.Schubert, T.Hofmann, Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W Tu, T.Yamaguchi, Y.Nanishi
  • Organizer: PLCN10
  • Place of Presentation: Cuernavaca Mexico
  • Year and Date: 2010-04-12