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2010 Fiscal Year Annual Research Report

窒化物光半導体のフロンティア―材料潜在能力の極限発現―

Administrative Group

Project AreaOptoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
Project/Area Number 18069013
Research InstitutionRitsumeikan University

Principal Investigator

名西 やす之  立命館大学, 理工学部, 教授 (40268157)

Keywords窒化物半導体 / 結晶成長 / 半導体物性 / 光デバイス / 紫外 / 赤外
Research Abstract

総括班として、領域代表者である名西が中心となり、各研究項目の総括者(A01:名西、A02:吉川、A03:天野、A04:岸野)との間において、研究項目間の連携の強化、調整を密に図り、領域全体の方針策定・立案・調整を、評価担当者の指導を仰ぎながら進めた。
年度末の成果報告会として、平成23年3月1日(火)-2日(水) 長浜ロイヤルホテル(滋賀県長浜市)において、平成22年度研究成果報告会を開催した。13件の計画研究、7件の公募研究、あわせて20件の研究課題からの成果報告を行った。今回が最終年度の報告会となるため、各研究代表者は、研究計画書の内容に基づき、特定領域研究開始当初のターゲット、領域内、グループ内での役割・分担、現在までの到達点、成果、国際的位置づけおよび今後の課題などについてまとめた報告を行った。また成果報告会の最後には、全体討論を行い、領域代表者、各項目代表者を中心として、5年間の特定領域としての成果のまとめ、今後の展開など総括を行った。
上記会議にあわせて、第9回(平成23年3月1日、2日)の総括班ミーティングを行い、総括班メンバー、評価担当者出席のもと、研究活動の総括、今後の報告活動の予定策定などを検討した。
対外活動としては、日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」(平成22年5月14日(金)~15日(土) 三重大学)を共催として開催し、関連研究成果の普及に努めた。

  • Research Products

    (57 results)

All 2011 2010

All Journal Article (8 results) (of which Peer Reviewed: 8 results) Presentation (49 results)

  • [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011

    • Author(s)
      K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
    • Journal Title

      Appl.Phys.Lett.

      Volume: 98 Pages: 042104/1-3

    • Peer Reviewed
  • [Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011

    • Author(s)
      T.Yamaguchi, Y.Nanishi
    • Journal Title

      Proceedings of SPIE photonic West 2011

      Volume: 7939 Pages: 793904

    • Peer Reviewed
  • [Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011

    • Author(s)
      T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50 Pages: 04DH08(1-4)

    • Peer Reviewed
  • [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010

    • Author(s)
      K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
    • Journal Title

      phys.stat.sol.(a)

      Volume: 207 Pages: 1356-1360

    • Peer Reviewed
  • [Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010

    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Journal Title

      Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)

      Pages: 92-95

    • Peer Reviewed
  • [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2010

    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50 Pages: 01AE02

    • Peer Reviewed
  • [Journal Article] Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure2010

    • Author(s)
      J.Ibanez, A.Segura, F.J.Manjon, L.Artus, T.Yamaguchi, Y.Nanishi
    • Journal Title

      Appl.Phys.Lett.

      Volume: 96 Pages: 201903/1-3

    • Peer Reviewed
  • [Journal Article] Structural Anisotropy of Nonpolar and Semipolar InN Epitaxial Layers2010

    • Author(s)
      V.Darakchieva, M.-Y.Xie, N.Franco, F.Giuliani, B.Nunes, E.Alues, C.L.Hsiao, L.C.Chen, T.Yamaguchi, Y.Takagi, K.Kawashima, Y.Nanishi
    • Journal Title

      J.Appl.Phys.

      Volume: 108 Pages: 073529/1-10

    • Peer Reviewed
  • [Presentation] N極性及びIn極性のInN-MIS構造の作製と評価2011

    • Author(s)
      森本健太、三木彰、山口智弘、前田就彦、荒木努、名西〓之
    • Organizer
      2011年春季 第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学 神奈川県厚木市
    • Year and Date
      2011-03-24
  • [Presentation] 電流-電圧特性の温度依存性評価によるp型InNの検証2011

    • Author(s)
      櫻井秀昭、井脇明日香、岩本亮輔、山口智弘、城川潤二郎、荒木努、名西〓之
    • Organizer
      2011年春季 第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学 神奈川県厚木市
    • Year and Date
      2011-03-24
  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011

    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      Granada Spain
    • Year and Date
      2011-03-17
  • [Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method2011

    • Author(s)
      T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya institute of technology, Aichi Japan
    • Year and Date
      2011-03-09
  • [Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN2011

    • Author(s)
      T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
    • Place of Presentation
      Nagoya institute of technology, Aichi Japan
    • Year and Date
      2011-03-07
  • [Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011

    • Author(s)
      T.Yamaguchi, Y.Nanishi
    • Organizer
      SPIE Photonic West 2011
    • Place of Presentation
      San Francisco, CA USA
    • Year and Date
      2011-01-24
  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Nano-Photonics2010

    • Author(s)
      Y.Nanishi
    • Organizer
      3rd GIST Information and Mechatronics Week 2010
    • Place of Presentation
      Seoul Korea
    • Year and Date
      2010-12-02
  • [Presentation] 窒化物光半導体未踏領域への挑戦-InNと関連混晶の新しい成長技術と評価2010

    • Author(s)
      名西〓之、山口智広、王科、荒木努、Euijoon Yoon
    • Organizer
      応用物理学会九州支部学術講演会
    • Place of Presentation
      九州大学伊都キャンパス福岡県福岡市
    • Year and Date
      2010-11-27
  • [Presentation] MBE法を用いたA面GaNテンプレート上A面InN選択成長2010

    • Author(s)
      山下修平、山口智広、荒木努、名西〓之
    • Organizer
      平成22年 電気関係学会関西連合大会
    • Place of Presentation
      立命館大学キャンパス滋賀県草津市
    • Year and Date
      2010-11-14
  • [Presentation] RF-MBE法を用いたr面サファイア基板上A面InN結晶高品質化に関する検討2010

    • Author(s)
      荒木努、川島圭介、山口智広、名西〓之
    • Organizer
      2010年度 電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学中之島センター大阪府大阪市
    • Year and Date
      2010-11-11
  • [Presentation] Recent Research Activities in Japan toward Nitride Semiconductor Opto-electronics Frontier2010

    • Author(s)
      Y.Nanishi
    • Organizer
      Korea Optoelectronic Engineering Society
    • Place of Presentation
      Seoul Korea
    • Year and Date
      2010-10-08
  • [Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure2010

    • Author(s)
      T.Yamaguchi, Y.Nanishi
    • Organizer
      2010 International Coference on Solid State Devices and Materials
    • Place of Presentation
      Tokyo Univ, Japan
    • Year and Date
      2010-09-24
  • [Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010

    • Author(s)
      K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-23
  • [Presentation] Raman scattering study of the temperature dependence of phonons in InN2010

    • Author(s)
      N.Domenech-Amador, L.Aruzs, R.Cusco, J.Ibanez, T.Yamaguchi, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
  • [Presentation] Evidence of Rectification in InN pn Junctions2010

    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
  • [Presentation] Free Hole Concentration and Mobility in InN : Mg2010

    • Author(s)
      N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
  • [Presentation] Unintentional incorporation of hydrogen in InN : diffusion kinetics and effect of surface orientation2010

    • Author(s)
      V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, L.Artus, D.Rogala, H.-W.Becker, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
  • [Presentation] Wet Etching Process for InN Device Fabrication2010

    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
  • [Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma2010

    • Author(s)
      T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
  • [Presentation] Mg doped InN and search for holes2010

    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-22
  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010

    • Author(s)
      Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Year and Date
      2010-09-21
  • [Presentation] TEMを用いたDERI法ドープInNの極微構造評価2010

    • Author(s)
      坂本努、山口智広、岩本亮輔、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
  • [Presentation] DERI法を用いたInGaN成長と組成制御への試み2010

    • Author(s)
      岩本亮輔、山口智広、上松尚、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
  • [Presentation] InNデバイス作製プロセスへのウエットエッチングの適用2010

    • Author(s)
      三木彰、森本健太、前田就彦、山口智広、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
  • [Presentation] DERI法InGaN成長を用いた厚膜化への試み2010

    • Author(s)
      上松尚、山口智広、岩本亮輔、坂本努、藤嶌辰也、荒木努、名西〓之
    • Organizer
      2010年(平成22年)秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学 文教キャンパス長崎県長崎市
    • Year and Date
      2010-09-14
  • [Presentation] Growth and Characterization of InN-Related Materials2010

    • Author(s)
      Y.Nanishi
    • Organizer
      Rainbow Second Training Workshop
    • Place of Presentation
      Madrid Spain
    • Year and Date
      2010-08-31
  • [Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method2010

    • Author(s)
      T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      16th International Conference on Molecular Beam Epitaxy (MBE 2010)
    • Place of Presentation
      Berlin Germany
    • Year and Date
      2010-08-26
  • [Presentation] Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications2010

    • Author(s)
      Y.Nanishi, T.Yamaguchi, E.Yoon
    • Organizer
      The second LED domestic conference
    • Place of Presentation
      Seoul Korea
    • Year and Date
      2010-08-25
  • [Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE2010

    • Author(s)
      T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG16)
    • Place of Presentation
      Beijing China
    • Year and Date
      2010-08-09
  • [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010

    • Author(s)
      F.J.Manjon, J.Ibanez, A.Segura, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
    • Organizer
      48th European High Pressure Research Group Conference (EHPRG)
    • Place of Presentation
      Uppsala Sweden
    • Year and Date
      2010-07-26
  • [Presentation] Forty years research toward compound semiconductor frontiers-Tributary road from GaAs to InN through GaN-2010

    • Author(s)
      Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
  • [Presentation] Wet Etching by KOH for InN Device Fabrication2010

    • Author(s)
      A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
  • [Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE2010

    • Author(s)
      T.Yamaguchi, H.Umeda, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
  • [Presentation] Characterization of Contact Resistance of Ti/Al/Ti/Au Ohmic Metal on N-polar and In-polar InN Films grown by RF-MBE2010

    • Author(s)
      K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
    • Organizer
      29th Electronic Materials Symposium (EMS29)
    • Place of Presentation
      ラフォーレ修善寺 静岡県伊豆市
    • Year and Date
      2010-07-14
  • [Presentation] Growth, Monitoring, P-type doping and MQW Structure Fabrication by DERI Method2010

    • Author(s)
      Y.Nanishi
    • Organizer
      The international worskshop on modern and advanced phenomena in wurtzite semiconductors
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-09
  • [Presentation] Evidence of Free Holes in Mg Doped InN2010

    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
  • [Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010

    • Author(s)
      T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
    • Organizer
      International Symposium on Growth of III-Nitrides 2010
    • Place of Presentation
      Montpellier France
    • Year and Date
      2010-07-06
  • [Presentation] Electronic Materials Conference 2010 (EMC2010)2010

    • Author(s)
      K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
    • Organizer
      Electronic Materials Conference 2010 (EMC2010)
    • Place of Presentation
      Notre Dame, Indiana, USA
    • Year and Date
      2010-06-25
  • [Presentation] Hydrogen in InN : Ubiquitous Phenomena in Molecular Beam Epitaxy Grown Material2010

    • Author(s)
      V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
    • Organizer
      CIMTEC2010 (5th Forum on New Materials)
    • Place of Presentation
      Montecatini Terme, Tuscany Italy
    • Year and Date
      2010-06-16
  • [Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010

    • Author(s)
      J.Ibanez, A.Segura, F.J.Manjon, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
    • Organizer
      2010 E-MRS Spring Meeting
    • Place of Presentation
      Strasbourg France
    • Year and Date
      2010-06-10
  • [Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010

    • Author(s)
      T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
    • Organizer
      22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      Takamatsu symbol tower, Kagawa Japan
    • Year and Date
      2010-06-01
  • [Presentation] Free-Charge Carrier Properties and Doping Mechanisms of Thin Films of InN and Related Alloys2010

    • Author(s)
      V.Darakchieva, M.Schubert, K.Lorenz, N.P.Barradas, E.Alves, T.Hofmann, B.Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
    • Organizer
      5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
    • Place of Presentation
      Albany, New York USA
    • Year and Date
      2010-05-27
  • [Presentation] Growth, Monitoring and InN/InGaN MQW Structure Fabrication by DERI Method2010

    • Author(s)
      Y.Nanishi, T.Yamaguchi
    • Organizer
      IX International Conference of Polish Society for Crystal Growth
    • Place of Presentation
      Gdansk-Sobieszewo Poland
    • Year and Date
      2010-05-25
  • [Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method2010

    • Author(s)
      T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing China
    • Year and Date
      2010-05-18
  • [Presentation] DERI法のRHEED強度その場観察手法を用いたラジカルセル診断2010

    • Author(s)
      勝木拓郎、福本英太、山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学 三重県三重市
    • Year and Date
      2010-05-15
  • [Presentation] DERI法を用いたIn系窒化物半導体の結晶成長とデバイス構造作製への応用2010

    • Author(s)
      山口智広、荒木努、名西〓之
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学 三重県三重市
    • Year and Date
      2010-05-14
  • [Presentation] Japan-Korea Joint Symposium2010

    • Author(s)
      Y.Nanishi
    • Organizer
      Japan-Korea Joint Symposium
    • Place of Presentation
      Daejeon Korea
    • Year and Date
      2010-04-21
  • [Presentation] 窒化物光半導体フロンティア領域開拓の現状2010

    • Author(s)
      名西〓之
    • Organizer
      LED総合フォーラム
    • Place of Presentation
      阿波銀ホール 徳島県徳島市
    • Year and Date
      2010-04-17
  • [Presentation] Optical Hall Effect in InN : Bulk Doping Mechanism and Surface Electron Accumulation Properties2010

    • Author(s)
      V.Darakchieva, M.Schubert, T.Hofmann, Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W Tu, T.Yamaguchi, Y.Nanishi
    • Organizer
      PLCN10
    • Place of Presentation
      Cuernavaca Mexico
    • Year and Date
      2010-04-12

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Published: 2012-07-19  

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