2010 Fiscal Year Final Research Report
Optoelectronics Frontier by Nitride Semiconductor-Ultimate Utilization of Nitride Semiconductor Material Potential-
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
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| Project/Area Number |
18069013
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Ritsumeikan University |
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Principal Investigator |
NANISHI Yasushi Ritsumeikan University, 理工学部, 教授 (40268157)
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIKAWA Akihiko 千葉大学, 工学部, 教授 (20016603)
AMANO Hiroshi 名古屋大学, 理工学部, 教授 (60202694)
KISHINO Katsumi 上智大学, 理工学部, 教授 (90134824)
KAWAKAMI Yoichi 京都大学, 工学研究科, 教授 (30214604)
ARAKI Tsutomu 立命館大学, 理工学, 准教授 (20312126)
FUNATO Mitsuru 京都大学, 工学研究科, 准教授 (70240827)
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| Research Collaborator |
AKASAKI Isamu 名城大学・名古屋大学, 教授・特別教授・名誉教授
SASAKI Akio 京都大学・大阪電気通信大学, 名誉教授
TAKAHASHI Kiyoshi 東京工業大学・最高裁判所, 名誉教授・専門委員
NISHINAGA Tatau 豊橋技術科学大学・東京大学, 客員教授・名誉教授
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| Project Period (FY) |
2006 – 2011
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| Keywords | 窒化物半導体 / 結晶成長 / 半導体物性 / 光デバイス / 紫外 / 赤外 |
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| Research Abstract |
Nitride semiconductors have contributed a great deal to the development of our society. In terms of high intrinsic potential of the materials, however, nitride semiconductors presently produce only a part of the wavelength region from ultraviolet to infrared. The aim of this research area is to extract the full potential of nitride semiconductors. We have developed novel crystal growth techniques, deep understanding of defect physics and luminescence dynamics, and optical devices with wider emission wavelength.
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