Creation of singularity structure by top-down method based on thermal equiburium condition

2020 Fiscal Year Final Research Report

• Project Area: Materials Science and Advanced Elecronics created by singularity
• Project/Area Number: 16H06415
• Research Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Mie University
• Principal Investigator: Hideto Miyake 三重大学, 地域イノベーション学研究科, 教授 (70209881)
• Co-Investigator(Kenkyū-buntansha): 宮川 鈴衣奈 名古屋工業大学, 工学(系)研究科(研究院), 助教 (10635197) ; 荒木 努 立命館大学, 理工学部, 教授 (20312126)
• Project Period (FY): 2016-06-30 – 2021-03-31
• Keywords: 窒化物半導体 / 高温アニール / 窒化アルミニウム / AlN / AlGaN / 深紫外LED

Outline of Final Research Achievements

We conducted research aimed at developing electronic applications of science that deepens crystal growth and crystal control of singular structures. The technique of producing a high-quality AlN film as a two-dimensional singular structure on a sapphire substrate is extremely important, but the AlN film on the sapphire substrate has high-density penetrating dislocations. We found that the crystallinity of AlN can be significantly improved by using high-temperature annealing of sputtering-deposited AlN on a sapphie, and clarified the mechanism. In addition, deep-ultraviolet LEDs and high-speed electron mobility transistors were manufactured using sputtered and annealed AlN templates, demonstrating the usefulness of high-quality AlN templates.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

近年，波長230-350 nmの深紫外発光ダイオード(LED)やレーザーダイオード(LD)は殺菌・浄水，医療分野，高密度光記録用光源として注目されている．高効率なデバイスの実現には、サファイアを基板に用いたAlNテンプレートの高品質化が非常に重要である．窒化物半導体の特異構造として、格子ミスマッチの大きい系における界面層制御に注目し、高温熱処理により超高品質のAlN層が得られることを明らかにした。