Creation of a multi-dimensional and scale singularity structure in crystals and understanding of its mechanism

2020 Fiscal Year Final Research Report

• Project Area: Materials Science and Advanced Elecronics created by singularity
• Project/Area Number: 16H06416
• Research Category: Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Meijo University
• Principal Investigator: Kamiyama Satoshi 名城大学, 理工学部, 教授 (10340291)
• Co-Investigator(Kenkyū-buntansha): 竹内 哲也 名城大学, 理工学部, 教授 (10583817) ; 岩谷 素顕 名城大学, 理工学部, 教授 (40367735) ; 本田 善央 名古屋大学, 未来材料・システム研究所, 准教授 (60362274)
• Project Period (FY): 2016-06-30 – 2021-03-31
• Keywords: GaN / ナノワイヤ / 量子殻 / 選択成長 / 半導体レーザー

Outline of Final Research Achievements

Crystal growth mechanism, extended defect formation mechanism and optical properties of a singularity structure composed of GaN nanowire and GaInN-based multi-quantum shells (MQSs) were studied. Tunnel junction to enhance current injection to the MQS was also investigated. Due to a great influence of surface energy in the small-scale singularity structure, shape of the nanowire/MQS structure was found to be greatly dependent on the growth condition. By applying this feature positively, particular shapes of the structure such as very high aspect ratio GaN nanowire could be grown reproducibly. The selective area growth technique made it possible to form periodic nanowire/MQS arrangement was obtained, and room-temperature pulsed operation of a blue MQS laser was demonstrated.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

本研究により単一モードの光共振器や半導体レーザー、またアクティブなフォトニック結晶を構成することが可能となり、新規高性能半導体デバイスにつながり学術的に大きな意義がある。また、本課題で示した量子殻レーザーの低しきい値電流動作は、高出力かつ、高エネルギー効率実現へのポテンシャルを持つこと、また3次元モード解析により、高出力と単一モード動作が可能であることが示され、将来の省エネルギー技術への期待が高まった。