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2018 Fiscal Year Annual Research Report

Computational mateipulationrials design for hetero-bond man

Planned Research

Project AreaMaterials Science and Advanced Elecronics created by singularity
Project/Area Number 16H06418
Research InstitutionMie University

Principal Investigator

伊藤 智徳  三重大学, 工学研究科, 教授 (80314136)

Co-Investigator(Kenkyū-buntansha) 秋山 亨  三重大学, 工学研究科, 准教授 (40362363)
平松 和政  三重大学, 地域イノベーション学研究科, 特任教授(研究担当) (50165205)
河村 貴宏  三重大学, 工学研究科, 助教 (80581511)
寒川 義裕  九州大学, 応用力学研究所, 教授 (90327320)
Project Period (FY) 2016-06-30 – 2021-03-31
Keywords計算科学 / 特異構造 / 窒化物半導体 / ナノ構造
Outline of Annual Research Achievements

初年度および次年度において開発した計算手法の現実系への適用を中心に、国内外の理論グループ、実験グループと緊密な連携をとりつつ特異構造創成に関わる研究を実施した。具体的には、表面・界面エネルギー計算手法と熱力学解析とを組み合わせることにより、表面の寄与を考慮したAlN半極性面における熱力学解析を行った。この解析によりAlN-MOVPE成長における成長条件(温度およ圧力)の実験結果と計算結果を直接的に比較することに成功した。またGaN-MOVPE成長を対象として、Ga原料であるトリメチルガリウムの解離過程、その結果としてのC原子混入について解析を行い、GaN成長条件とC混入料との相関を明らかにした。さらに、表面・界面エネルギー計算手法によって得られた計算結果をもとに、窒化物を含むIII-V族半導体の成長様式およびナノ構造形状をシミュレーションし、選択成長におけるナノ構造形成については形状を決定する支配因子の抽出に成功した。これら成功裏に適用されてきた計算手法を有機的に組み合わせて、エピタキシャル成長において重要な役割を果たすステップの挙動に関して、その安定構造およびそこでの吸着・脱離の挙動解明に向けた検討に着手している。これらに加えて、AlInN混晶およびInN/GaN超格子の光学物性に関する解析を実施し、AlInN混晶における組成依存性、InN/GaN超格子における膜厚依存性を明らかにするとともに、実験結果との比較を通してその妥当性を確認した。

Current Status of Research Progress
Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

当初計画にある特異構造の安定性に関する検討を進めて成果を得るとともに、海外共同研究への展開も含めて計算手法の独自開発、適用を着実に実施している。さらに、これらの各種計算手法を組み合わせることで、当該(H31)年度に遂行予定であるステップを含めた表面、界面、ナノ構造における特異構造創成に向けた予備的成果も得ている。これらの成果は、レビューを含む学術論文、著書、招待講演10件を含む国際会議において発表しており、進捗状況は順調である。

Strategy for Future Research Activity

今後は、これまでに開発したさまざまな計算手法を組み合わせることで、各種成長手法(MBE成長やMOVPE成長)との対応を念頭に、様々な面方位あるいは表面でのステップ形成をも考慮した「表面、界面、ナノ構造における特異構造創成の理論的検討」を進める予定である。具体的には、成長条件を考慮できる量子論的アプローチ、表面・界面エネルギー計算手法に加えて、Kinetic-thermodynamic model、Steepest-Entropy-Ascent Quantum Thermodynamics (SEAQT)、First-principles phonon calculations等を駆使して研究の展開を図る。また、クロスアポイントメントを活用しつつ国内外の理論グループ、実験グループとも連携して、これら特異構造創成指針の確立に向けて研究を加速する。

  • Research Products

    (76 results)

All 2019 2018 Other

All Int'l Joint Research (3 results) Journal Article (12 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 12 results,  Open Access: 1 results) Presentation (59 results) (of which Int'l Joint Research: 38 results,  Invited: 15 results) Book (2 results)

  • [Int'l Joint Research] Institute of High Pressure Physics(ポーランド)

    • Country Name
      POLAND
    • Counterpart Institution
      Institute of High Pressure Physics
  • [Int'l Joint Research] Rice University/University of Maryland/Virginia Institute of Technology(米国)

    • Country Name
      U.S.A.
    • Counterpart Institution
      Rice University/University of Maryland/Virginia Institute of Technology
  • [Int'l Joint Research] Oxford University(英国)

    • Country Name
      UNITED KINGDOM
    • Counterpart Institution
      Oxford University
  • [Journal Article] CH4 Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films2019

    • Author(s)
      Kusaba Akira、Li Guanchen、Kempisty Pawel、von Spakovsky Michael、Kangawa Yoshihiro
    • Journal Title

      Materials

      Volume: 12 Pages: 972-1~14

    • DOI

      10.3390/ma12060972

    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy2019

    • Author(s)
      Inatomi Y.、Kangawa Y.、Pimpinelli A.、Einstein T. L.
    • Journal Title

      Physical Review Materials

      Volume: 3 Pages: 013401-1~8

    • DOI

      10.1103/PhysRevMaterials.3.013401

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Effects of surface and twinning energies on twining-superlattice formation in group III-V semiconductor nanowires: a first-principles study2019

    • Author(s)
      Akiyama Toru、Nakamura Kohji、Ito Tomonori
    • Journal Title

      Nanotechnology

      Volume: 30 Pages: 234001-1~7

    • DOI

      10.1088/1361-6528/ab06d0

    • Peer Reviewed
  • [Journal Article] An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(1?1?1) substrate2019

    • Author(s)
      Akiyama Toru、Tsuboi Yuma、Nakamura Kohji、Ito Tomonori
    • Journal Title

      Journal of Crystal Growth

      Volume: 511 Pages: 89~92

    • DOI

      10.1016/j.jcrysgro.2019.01.036

    • Peer Reviewed
  • [Journal Article] Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoints2019

    • Author(s)
      Ito Tomonori、Akiyama Toru、Nakamura Kohji
    • Journal Title

      Journal of Crystal Growth

      Volume: 512 Pages: 41~46

    • DOI

      10.1016/j.jcrysgro.2019.01.028

    • Peer Reviewed
  • [Journal Article] Modified approach for calculating individual energies of polar and semipolar surfaces of group-III nitrides2019

    • Author(s)
      Akiyama Toru、Seta Yuki、Nakamura Kohji、Ito Tomonori
    • Journal Title

      Physical Review Materials

      Volume: 3 Pages: 023401-1~10

    • DOI

      10.1103/PhysRevMaterials.3.023401

    • Peer Reviewed
  • [Journal Article] Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth2019

    • Author(s)
      Seta Yuki、Akiyama Toru、Pradipto Abdul Muizz、Nakamura Kohji、Ito Tomonori
    • Journal Title

      Journal of Crystal Growth

      Volume: 510 Pages: 7~12

    • DOI

      10.1016/j.jcrysgro.2018.12.011

    • Peer Reviewed
  • [Journal Article] Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)2018

    • Author(s)
      Ito Tomonori、Akiyama Toru、Nakamura Kohji、Pradipto Abdul-Muizz
    • Journal Title

      physica status solidi (a)

      Volume: 216 Pages: 1800476-1~4

    • DOI

      10.1002/pssa.201800476

    • Peer Reviewed
  • [Journal Article] An Interpretation for Defect-Induced Structural Transformation in SiC2018

    • Author(s)
      Ito Tomonori、Akiyama Toru、Nakamura Kohji、Pradipto Abdul-Muizz
    • Journal Title

      ECS Transactions

      Volume: 86 Pages: 427~432

    • DOI

      10.1149/08607.0427ecst

    • Peer Reviewed
  • [Journal Article] Empirical interatomic potential approach to the stability of graphitic structure in BAlN and BGaN alloys2018

    • Author(s)
      Hasegawa Yuya、Akiyama Toru、Pradipto Abdul Muizz、Nakamura Kohji、Ito Tomonori
    • Journal Title

      Journal of Crystal Growth

      Volume: 504 Pages: 13~16

    • DOI

      10.1016/j.jcrysgro.2018.09.016

    • Peer Reviewed
  • [Journal Article] An ab initio approach to polarity inversion of AlN and GaN films on AlN$(000\bar{1})$ substrate with Al overlayers: an insight from interface energies2018

    • Author(s)
      Uchino Motoshi、Akiyama Toru、Nakamura Kohji、Ito Tomonori
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Pages: 098001~098001

    • DOI

      10.7567/JJAP.57.098001

    • Peer Reviewed
  • [Journal Article] First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth2018

    • Author(s)
      Kawamura Takahiro、Kitamoto Akira、Imade Mamoru、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi、Akiyama Toru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Pages: 115504~115504

    • DOI

      10.7567/JJAP.57.115504

    • Peer Reviewed
  • [Presentation] AlN(0001)基板上におけるAlGaN 薄膜の成長様式に関する理論的検討2019

    • Author(s)
      積木伸之介,Abdul-Muizz Pradipto,秋山亨,中村浩次,伊藤智徳
    • Organizer
      2019 年第66 回応用物理学会春季学術講演会
  • [Presentation] GaN(0001)表面におけるステップ端での吸着・脱離の挙動に関する理論的検討2019

    • Author(s)
      秋山亨,相可拓巳,中村浩次,伊藤智徳
    • Organizer
      2019 年第66 回応用物理学会春季学術講演会
  • [Presentation] キンクおよびステップ構造を持つGaN極性表面におけるO不純物の脱離エネルギーの解析2019

    • Author(s)
      河村貴宏,竹田浩基,北本啓,今出完,吉村政志,森勇介,森川良忠,寒川義裕,柿本浩一
    • Organizer
      2019 年第66 回応用物理学会春季学術講演会
  • [Presentation] 窒化物半導体成長モデリングの進展:不純物混入機構の考察2019

    • Author(s)
      寒川義裕
    • Organizer
      第11回九大2D物質研究会「2D物質の形成と構造・物性評価」
    • Invited
  • [Presentation] Ⅲ族窒化物における表面・界面構造の理論解析2019

    • Author(s)
      秋山亨,中村浩次,伊藤智徳
    • Organizer
      第47 回結晶成長国内会議
    • Invited
  • [Presentation] GaN MOVPEにおける炭素取込み機構の考察2018

    • Author(s)
      寒川義裕
    • Organizer
      第47 回結晶成長国内会議
    • Invited
  • [Presentation] 第一原理計算によるGaN結晶成長に関する研究2018

    • Author(s)
      河村貴宏
    • Organizer
      第47回結晶成長国内会議
  • [Presentation] 第一原理計算によるAlN/InN超格子のバンドギャップ解析2018

    • Author(s)
      河村貴宏,藤田裕真,浜地祐矢,秋山亨,寒川義裕
    • Organizer
      日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会 第110回研究会・特別公開シンポジウム
  • [Presentation] A new theoretical model for adatom density and lifetime on polar GaN surfaces during MBE and MOVPE2018

    • Author(s)
      Y. Inatomi, Y. Kangawa, A. Pimpinelli, and T. L. Einstein
    • Organizer
      第37回電子材料シンポジウム
  • [Presentation] 自由エネルギー表式によるAlN(0001)基板上におけるGaN 薄膜の成長様式に関する理論的解析2018

    • Author(s)
      積木伸之介,Abdul-Muizz Pradipto,秋山亨,中村浩次,伊藤智徳
    • Organizer
      2018 年秋季第79 回応用物理学会学術講演会
  • [Presentation] GaN(0001)面におけるステップの安定性に関する理論的研究2018

    • Author(s)
      相可拓巳,Abdul-Muizz Pradipto,秋山亨,中村浩次,伊藤智徳
    • Organizer
      2018 年秋季第79 回応用物理学会学術講演会
  • [Presentation] 窒化物半導体の有機金属気相エピタキシー成長における熱力学解析:半極性面の検討2018

    • Author(s)
      瀬田雄基,秋山亨,Abdul-Muizz Pradipto,中村浩次,伊藤智徳,草場彰,寒川義裕
    • Organizer
      2018 年秋季第79 回応用物理学会学術講演会
  • [Presentation] BAlN およびBGaN における構造安定性および混和性に関する理論的検討2018

    • Author(s)
      長谷川裕也,秋山亨,Abdul-Muizz Pradipto,中村浩次,伊藤智徳
    • Organizer
      2018 年秋季第79 回応用物理学会学術講演会
  • [Presentation] InAs/GaAs(001)系ミスフィット転位形成に関する理論的検討:表面再構成の影響2018

    • Author(s)
      米本和弘,秋山亨,Abdul-Muizz Pradipto,中村浩次,伊藤智徳
    • Organizer
      2018 年秋季第79 回応用物理学会学術講演会
  • [Presentation] Ⅲ族窒化物における極性および半極性の表面エネルギー計算アルゴリズムの構築2018

    • Author(s)
      秋山亨,瀬田雄基,中村浩次,伊藤智徳
    • Organizer
      2018 年秋季第79 回応用物理学会学術講演会
  • [Presentation] Ⅲ族窒化物二次元原子層膜の構造安定性に関する理論的検討:膜厚依存性2018

    • Author(s)
      秋山亨,坪井佑磨,長谷川裕也,中村浩次,伊藤智徳
    • Organizer
      2018 年秋季第79 回応用物理学会学術講演会
  • [Presentation] 計算科学で見るGaN エピタキシャル成長2018

    • Author(s)
      伊藤智徳
    • Organizer
      2018 年秋季第79 回応用物理学会学術講演会
    • Invited
  • [Presentation] III族窒化物半導体超格子におけるバンドギャップの組成依存性2018

    • Author(s)
      河村貴宏,藤田裕真,浜地祐矢,秋山亨,寒川義裕
    • Organizer
      2018 年秋季第79 回応用物理学会学術講演会
  • [Presentation] GaN-MOVPE成長におけるCH4吸着確率とC不純物濃度の面方位依存性2018

    • Author(s)
      草場彰,李冠辰,Pawel Kempisty,Michael R. von Spakovsky,寒川義裕
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
  • [Presentation] AlInN超格子構造におけるバンドギャップの組成依存性2018

    • Author(s)
      藤田裕真,河村貴宏,鈴木泰之,秋山亨,寒川義裕
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
  • [Presentation] 電子材料開発における計算科学の進展2018

    • Author(s)
      寒川義裕
    • Organizer
      佐賀大学シンクロトロン光応用研究センター講演会
    • Invited
  • [Presentation] Recent progress in computational material science for growth of nitride semiconductors I I2018

    • Author(s)
      Toru Akiyama
    • Organizer
      4th International Discussion on Growth of Nitride Semiconductors
    • Int'l Joint Research / Invited
  • [Presentation] Recent progress in computational material science for growth of nitride semiconductors I2018

    • Author(s)
      Tomonori Ito
    • Organizer
      4th International Discussion on Growth of Nitride Semiconductors
    • Int'l Joint Research / Invited
  • [Presentation] Ab initio-based approach to crystal growth of nitride semiconductors: alloy composition and impurity concentration2018

    • Author(s)
      Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi
    • Organizer
      4th International Discussion on Growth of Nitride Semiconductors
    • Int'l Joint Research / Invited
  • [Presentation] Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures2018

    • Author(s)
      Toru Akiyama, Motoshi Uchino, Kohji Nakamura, Tomonori Ito, S. Xiao, Hideto Miyake
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth condition2018

    • Author(s)
      Yuki Seta, Abdul-Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, A. Kusaba, Y. Kangawa
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] A new computational approach for structural stability and miscibility in BAlN and BGaN alloys2018

    • Author(s)
      Yuya Hasegawa, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] First-Principles Investigation of Compositional Dependence of Band Gaps in AlN/InN and InN/GaN Superlattices2018

    • Author(s)
      Yuma Fujita, Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Malgorzata Wierzbowska, Stanislaw Krukowski
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] First-principles analysis of oxygen adsorption on kinked GaN(0001) surface2018

    • Author(s)
      Hiroki Takeda, Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] Theoretical invesigations for growth mode of GaN thin films on AlN(0001) substrate2018

    • Author(s)
      Shinnosuke Tsumuki, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] Surface adatom density and lifetime on polar GaN surfaces during MBE and MOVPE: a theoretical approach2018

    • Author(s)
      Y. Inatomi, Y. Kangawa, A. Pimpinelli, and T. L. Einstein
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] Systematic improvement of III-nitrides surface thermodynamics by including first principles phonon calculations2018

    • Author(s)
      Pawel Kempisty, and Yoshihiro Kangawa
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] Non-equilibrium analysis of CH4 adsorption on GaN(0001) and (000-1): the growth orientation dependence of the C impurity concentration2018

    • Author(s)
      Akira Kusaba, Guanchen Li, Pawel Kempisty, Michael R. von Spakovsky, and Yoshihiro Kangawa
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] Monte Carlo study of influence of MOVPE growth condition on carbon concentration in GaN epi-layer2018

    • Author(s)
      Satoshi Yamamoto, Yuya Inatomi, Akira Kusaba, Pawel Kempisty, Kenji Shiraishi, and Yoshihiro Kangawa
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
  • [Presentation] Effects of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)2018

    • Author(s)
      Kazuhiro Yonemoto, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    • Organizer
      14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
    • Int'l Joint Research
  • [Presentation] Computational approach for the stability of stepped GaN(0001) surfaces2018

    • Author(s)
      Takumi Ohka, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    • Organizer
      14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
    • Int'l Joint Research
  • [Presentation] Ab initio based-approach to impurity incorporation mechanism in GaN MOVPE2018

    • Author(s)
      Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi
    • Organizer
      The 6th Japan-China Symposium on Crystal Growth and Crystal Technology
    • Int'l Joint Research / Invited
  • [Presentation] Influence of surface reconstruction on the impurity incorporation in GaN MOVPE2018

    • Author(s)
      Yoshihiro Kangawa
    • Organizer
      Mathematical Aspects of Surface and Interface Dynamics 16
    • Int'l Joint Research / Invited
  • [Presentation] An interpretation for defect-induced structural transformation in SiC2018

    • Author(s)
      Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
    • Organizer
      American International Meeting on Electrochemistry and Solid State Science
    • Int'l Joint Research
  • [Presentation] Twinning superlattice formation in III-V compound semiconductor nanowires revisited: Effects of surface and twinning energies2018

    • Author(s)
      Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
    • Organizer
      2018 International Conference on Solid State Devices and Materials
    • Int'l Joint Research
  • [Presentation] Theoretical investigations for formation process of submonolayer InAs on GaAs(001) during MBE growth2018

    • Author(s)
      Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
    • Organizer
      The 20th International Conference on Molecular Beam Epitaxy
    • Int'l Joint Research
  • [Presentation] An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Efects of Ag(111) substrate2018

    • Author(s)
      Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
    • Organizer
      The 20th International Conference on Molecular Beam Epitaxy
    • Int'l Joint Research
  • [Presentation] Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoints2018

    • Author(s)
      Tomonori Ito
    • Organizer
      The 20th International Conference on Molecular Beam Epitaxy
    • Int'l Joint Research / Invited
  • [Presentation] Effective approach for calculating absolute surface energies of polar and semipolar planes for group-III nitrides under MOVPE conditions2018

    • Author(s)
      Toru Akiyama, Yuki Seta, Kohji Nakamura, Tomonori Ito
    • Organizer
      The 7th International Symposium of Growth of III-Nitrides
    • Int'l Joint Research
  • [Presentation] Compositional Dependence of Band Gaps in III-Nitride Semiconductor Superlattices2018

    • Author(s)
      Takahiro Kawamura, Toru Akiyama, and Yoshihiro Kangawa
    • Organizer
      The 7th International Symposium of Growth of III-Nitrides
    • Int'l Joint Research
  • [Presentation] A simple theoretical approach to growth mode of III-nitride thin films2018

    • Author(s)
      Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
    • Organizer
      The 7th International Symposium of Growth of III-Nitrides
    • Int'l Joint Research
  • [Presentation] Theoretical study: Impurity incorporation in GaN MOVPE2018

    • Author(s)
      Yoshihiro Kangawa, Pawel Kempisty, and Kenji Shiraishi
    • Organizer
      The 7th International Symposium of Growth of III-Nitrides
    • Int'l Joint Research / Invited
  • [Presentation] Monte Carlo simulation of carbon incorporation in GaN MOVPE2018

    • Author(s)
      S. Yamamoto, Y. Inatomi, A. Kusaba, P. Kempisty, Y. Kangawa
    • Organizer
      The 7th International Symposium of Growth of III-Nitrides
    • Int'l Joint Research
  • [Presentation] A theoretical model for carbon incorporation during step-flow growth of GaN by MOVPE2018

    • Author(s)
      Y. Inatomi, Y. Kangawa
    • Organizer
      The 7th International Symposium of Growth of III-Nitrides
    • Int'l Joint Research
  • [Presentation] Contribution of first principles phonon calculations to thermodynamics analysis of GaN surfaces2018

    • Author(s)
      Pawel Kempisty, Yoshihiro Kangawa, Stanislaw Krukowski
    • Organizer
      The 7th International Symposium of Growth of III-Nitrides
    • Int'l Joint Research
  • [Presentation] Relationship between the CH4 Adsorption Probability and the C Impurity Concentration in the Polar-GaN MOVPE System2018

    • Author(s)
      A. Kusaba, G. Li, M. R. von Spakovsky, P. Kempisty, Y. Kangawa
    • Organizer
      The 7th International Symposium of Growth of III-Nitrides
    • Int'l Joint Research
  • [Presentation] New approach for calculating absolute surface energies of wurtzite structured group III-nitrides2018

    • Author(s)
      Toru Akiyama, Yuki Seta, Kohji Nakamura, Tomonori Ito
    • Organizer
      The 34th International Conference on the Physics of Semiconductors
    • Int'l Joint Research
  • [Presentation] Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth2018

    • Author(s)
      Yuki Seta, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy
    • Int'l Joint Research
  • [Presentation] First-Principles Calculations of GaN Surface Structures under OVPE Growth Conditions and Desorption Energies of Oxygen Impurities2018

    • Author(s)
      Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy
    • Int'l Joint Research
  • [Presentation] Empirical Interatomic potential approach to the stability of graphitic structure in BAlN and BGaN2018

    • Author(s)
      Yuya Hasegawa, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy
    • Int'l Joint Research
  • [Presentation] Surface reconstruction and impurity incorporation in GaN MOVPE: Ab initio-based modeling2018

    • Author(s)
      Y. Kangawa, P. Kempisty, S. Krukowski, K. Shiraishi, K. Kakimoto
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy
    • Int'l Joint Research / Invited
  • [Presentation] Theoretical investigations for surface reconstructions of submonolayer InAs grown on GaAs(001)2018

    • Author(s)
      Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
    • Organizer
      The 45th International Symposium on Compound Semiconductors
    • Int'l Joint Research
  • [Presentation] Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE2018

    • Author(s)
      Y. Inatomi, A. Kusaba, Y. Kangawa, K. Kojima, S. F. Chichibu
    • Organizer
      The 6th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research / Invited
  • [Presentation] Modeling and process design of III-nitride MOVPE2018

    • Author(s)
      Y. Kangawa, P. Kempisty, K. Shiraishi
    • Organizer
      The 6th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research / Invited
  • [Book] Epitaxial Growth of III-Nitride Compounds Computational Approach2018

    • Author(s)
      Tomonori Ito, Toru Akiyama, Yoshihiro Kangawa Takashi Nakayama, Kenji Shiraishi
    • Total Pages
      223
    • Publisher
      Springer
    • ISBN
      978-3-319-76640-9
  • [Book] Advances in Computer Simulation Studies on Crystal Growth2018

    • Author(s)
      Hiroki Nada (Editor), Tomonori Ito, Toru Akiyama 他
    • Total Pages
      137
    • Publisher
      Mdpi AG

URL: 

Published: 2019-12-27  

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