2020 Fiscal Year Final Research Report
Research on novel light emitting devices using the unique properties generated by singularity of crystal
| Project Area | Materials Science and Advanced Elecronics created by singularity |
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| Project/Area Number |
16H06420
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| Research Category |
Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Institute of Physical and Chemical Research |
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Principal Investigator |
Hideki Hirayama 国立研究開発法人理化学研究所, 開拓研究本部, 主任研究員 (70270593)
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| Co-Investigator(Kenkyū-buntansha) |
鎌田 憲彦 埼玉大学, 理工学研究科, 教授 (50211173)
寺嶋 亘 国立研究開発法人理化学研究所, 平山量子光素子研究室, 研究員 (30450406)
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| Project Period (FY) |
2016-06-30 – 2021-03-31
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| Keywords | 特異構造結晶 / 深紫外LED / テラヘルツ量子カスケードレーザ / 結晶成長 |
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| Outline of Final Research Achievements |
We aim to realize novel light-emitting devices by utilizing the unique physical properties generated by singularity of the crystal.
AlGaN deep-UV light-emitting diodes (LEDs) were fabricated on the AlN buffer grown on the patterned substrates for the purpose of realizing high light-extraction efficiency, and we obtained single peak emission from the LED. We also fabricated deep-UV laser diode (LD) with a polarization doped p-type cladding layer, and a high current injection operation was obtained assisted by high hole concentration. We improved the performance of terahertz quantum-cascade lasers (THz-QCLs) using inter-subband transition engineering, and realized high output power operation and increasing operating temperature. The room temperature optical gain of the GaN THz-QCL was shown by analysis. A double-metal waveguide GaN-based QCL was fabricated using the Si substrate lift-off process, and the current-voltage characteristics predicted by the analysis were observed.
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| Free Research Field |
量子電子・光デバイス工学、半導体結晶工学
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| Academic Significance and Societal Importance of the Research Achievements |
特異性結晶により得られた特異な物性の発現とそれを利用した新機能光デバイスの研究内容は、新規物性に関する物理的な理解と光デバイスエンジニアリング分野に於いて学術的な意義が大きい。深紫外・テラヘルツ領域の革新的デバイスの創出により、殺菌・ウィルス不活化、浄水、空気浄化など現在問題となっている感染症対策や福祉環境保全が促進され、また、各種透視・非破壊検査用の光源としてセキュリティ検査、医療などの応用分野に波及すると考えられ、我が国の経済発展への寄与が大きい。
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