Study of point defects and light-emitting dynamics in group-III nitride semiconductors

2008 Fiscal Year Self-evaluation Report

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069001
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: University of Tsukuba
• Principal Investigator: UEDONO Akira University of Tsukuba, 大学院数理物質科学研究科, 准教授 (20213374)
• Project Period (FY): 2006 – 2010
• Keywords: III族窒化物半導体 / 点欠陥 / 発光ダイナミックス

Research Abstract

本研究の目的は,陽電子消滅と高精度時間分解PL測定法等の光学特性評価を組み合わせ,AlGaInNの発光効率を支配する輻射・非輻射再結合寿命を定量化し,非輻射再結合中心である点欠陥(空孔型欠陥や格子間型欠陥)の密度と種類との相関を明らかにすることにある.さらに,第一原理計算を用いて各種欠陥の原子・電子構造や表面・界面のバンド構造等について知見を得て,実験結果を理論的側面からバックアップする.

Research Products

• [Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation (2009)
  • Author(s): A. Uedono, H. Nakamori, K. Narita, and J. Suzuki, X. Wang, S.-B. Che, Y. Ishitani, A. Yoshikawa and S. Ishibashi
  • Journal Title: J. App. Phys 105 Pages: 054507 (1-6)
  • Peer Reviewed
• [Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy (2009)
  • Author(s): T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, A. Uedono and S. F. Chichibu
  • Journal Title: J. App. Phys 105 Pages: 023529 (1-7)
  • Peer Reviewed
• [Journal Article] Intrinsic ferromagnetism due to cation vacancies in Gd-doped GaN, "First principles simulation" (2008)
  • Author(s): Y. Gohda and A. Oshiyama
  • Journal Title: Phys. Rev B 78 Pages: 161201R (1-4)
  • Peer Reviewed
• [Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam (2008)
  • Author(s): A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo and S. Ishibashi
  • Journal Title: J. App. Phys 103 Pages: 104505 (1-5)
  • Peer Reviewed
• [Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques (2007)
  • Author(s): S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sot
  • Journal Title: Philosophical Magazine 87 Pages: 2019-2039
  • Peer Reviewed
• [Presentation] 窒化物半導体における陽イオン空孔による磁性 (2008)
  • Author(s): 合田義弘,押山淳
  • Organizer: 日本物理学会2008年秋季大会
  • Place of Presentation: 岩手大学
  • Year and Date: 2008-09-21
• [Presentation] Point defects in group-III nitride semiconductors studied by positron annihilation (2008)
  • Author(s): A. Uedono, S. Ishibashi, T. Ohdaira, R. Suzuki
  • Organizer: The 2nd International Symposium on Growth of III-Nitrides
  • Place of Presentation: Izu, Japan
  • Year and Date: 2008-07-06
• [Presentation] Impacts of point defects on the recombination dynamics and emission efficiency of (Al,Ga)N (2008)
  • Author(s): S. F. Chichibu, T. Onuma, and A. Uedono
  • Organizer: The Fourth Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2008-05-23
• [Presentation] Raditive and nonradiative processes in (Al,In,Ga)N alloy films (2007)
  • Author(s): S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota
  • Organizer: 14th Semiconducting and Insulating Materials Conference
  • Place of Presentation: Fayetteville, Arkansas, USA
  • Year and Date: 2007-05-15
• [Book] Advances in Light Emitting Materials, edited by B. Monemar and H. Grimmeiss, (edited by B. Monemar and H. Grimmeiss), (Impact of Point Defects on the Luminescence Properties of (Al,Ga)N) (2008)
  • Author(s): S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck and S. Nakamura
  • Total Pages: 278
  • Publisher: Stafa-Zuerich
• [Remarks] 2008年度 応用物理学会論文賞「JJAP論文賞」, 論文名:K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, "Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes", Jpn. J. Appl. Phys. 46,, 2007,. L187-L189
• [Remarks] 第7回 (2008年) ドコモ・モバイル・サイエンス賞 基礎科学部門優秀賞 「非視認通信および表示・照明用III族窒化物半導体の物性研究」
• [Patent(Industrial Property Rights)] 紫外線窒化物半導体発光素子およびその製造方法 (2007)
  • Inventor(s): 秩父重英,尾沼猛儀,小山享宏,宗田孝之,池田大勝
  • Industrial Property Rights Holder: 東北大学・早稲田大学
  • Industrial Property Number: 特願2007-297191
  • Filing Date: 2007-11-15