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2008 Fiscal Year Self-evaluation Report

Study of point defects and light-emitting dynamics in group-III nitride semiconductors

Planned Research

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Project AreaOptoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
Project/Area Number 18069001
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionUniversity of Tsukuba

Principal Investigator

UEDONO Akira  University of Tsukuba, 大学院数理物質科学研究科, 准教授 (20213374)

Project Period (FY) 2006 – 2010
KeywordsIII族窒化物半導体 / 点欠陥 / 発光ダイナミックス
Research Abstract

本研究の目的は,陽電子消滅と高精度時間分解PL測定法等の光学特性評価を組み合わせ,AlGaInNの発光効率を支配する輻射・非輻射再結合寿命を定量化し,非輻射再結合中心である点欠陥(空孔型欠陥や格子間型欠陥)の密度と種類との相関を明らかにすることにある.さらに,第一原理計算を用いて各種欠陥の原子・電子構造や表面・界面のバンド構造等について知見を得て,実験結果を理論的側面からバックアップする.

  • Research Products

    (13 results)

All 2009 2008 2007 Other

All Journal Article (5 results) (of which Peer Reviewed: 5 results) Presentation (4 results) Book (1 results) Remarks (2 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Vacancy-type defects in Mg-doped InN probed by means of positron annihilation2009

    • Author(s)
      A. Uedono, H. Nakamori, K. Narita, and J. Suzuki, X. Wang, S.-B. Che, Y. Ishitani, A. Yoshikawa and S. Ishibashi
    • Journal Title

      J. App. Phys 105

      Pages: 054507 (1-6)

    • Peer Reviewed
  • [Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2009

    • Author(s)
      T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, A. Uedono and S. F. Chichibu
    • Journal Title

      J. App. Phys 105

      Pages: 023529 (1-7)

    • Peer Reviewed
  • [Journal Article] Intrinsic ferromagnetism due to cation vacancies in Gd-doped GaN, "First principles simulation"2008

    • Author(s)
      Y. Gohda and A. Oshiyama
    • Journal Title

      Phys. Rev B 78

      Pages: 161201R (1-4)

    • Peer Reviewed
  • [Journal Article] Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam2008

    • Author(s)
      A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo and S. Ishibashi
    • Journal Title

      J. App. Phys 103

      Pages: 104505 (1-5)

    • Peer Reviewed
  • [Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques2007

    • Author(s)
      S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sot
    • Journal Title

      Philosophical Magazine 87

      Pages: 2019-2039

    • Peer Reviewed
  • [Presentation] 窒化物半導体における陽イオン空孔による磁性2008

    • Author(s)
      合田義弘,押山淳
    • Organizer
      日本物理学会2008年秋季大会
    • Place of Presentation
      岩手大学
    • Year and Date
      2008-09-21
  • [Presentation] Point defects in group-III nitride semiconductors studied by positron annihilation2008

    • Author(s)
      A. Uedono, S. Ishibashi, T. Ohdaira, R. Suzuki
    • Organizer
      The 2nd International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Izu, Japan
    • Year and Date
      2008-07-06
  • [Presentation] Impacts of point defects on the recombination dynamics and emission efficiency of (Al,Ga)N2008

    • Author(s)
      S. F. Chichibu, T. Onuma, and A. Uedono
    • Organizer
      The Fourth Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2008-05-23
  • [Presentation] Raditive and nonradiative processes in (Al,In,Ga)N alloy films2007

    • Author(s)
      S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota
    • Organizer
      14th Semiconducting and Insulating Materials Conference
    • Place of Presentation
      Fayetteville, Arkansas, USA
    • Year and Date
      2007-05-15
  • [Book] Advances in Light Emitting Materials, edited by B. Monemar and H. Grimmeiss, (edited by B. Monemar and H. Grimmeiss), (Impact of Point Defects on the Luminescence Properties of (Al,Ga)N)2008

    • Author(s)
      S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck and S. Nakamura
    • Total Pages
      278
    • Publisher
      Stafa-Zuerich
  • [Remarks] 2008年度 応用物理学会論文賞「JJAP論文賞」, 論文名:K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, "Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes", Jpn. J. Appl. Phys. 46,, 2007,. L187-L189

  • [Remarks] 第7回 (2008年) ドコモ・モバイル・サイエンス賞 基礎科学部門優秀賞 「非視認通信および表示・照明用III族窒化物半導体の物性研究」

  • [Patent(Industrial Property Rights)] 紫外線窒化物半導体発光素子およびその製造方法2007

    • Inventor(s)
      秩父重英,尾沼猛儀,小山享宏,宗田孝之,池田大勝
    • Industrial Property Rights Holder
      東北大学・早稲田大学
    • Industrial Property Number
      特願2007-297191
    • Filing Date
      2007-11-15

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Published: 2010-06-11   Modified: 2016-04-21  

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