2010 Fiscal Year Final Research Report
Study of point defects and light-emitting dynamics in group-III nitride semiconductors
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
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| Project/Area Number |
18069001
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | University of Tsukuba |
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Principal Investigator |
UEDONO Akira University of Tsukuba, 大学院・数理物質科学研究科, 教授 (20213374)
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| Co-Investigator(Kenkyū-buntansha) |
CHICHIBU Shigefusa 東北大学, 多元物質科学研究所, 教授 (80266907)
OSHIYAMA Atsushi 東京大学, 大学院・工学系研究科, 教授 (80143361)
UCHIDA Kazuyuki 東京大学, 大学院・工学系研究科, 助教 (10393810)
SHIRAISHI Kenji 筑波大学, 大学院・数理物質科学研究科, 教授 (20334039)
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| Project Period (FY) |
2006 – 2010
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| Keywords | III族窒化物半導体 / 点欠陥 / 発光ダイナミックス |
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| Research Abstract |
We studied relationships between nonradiative recombination lifetimes and point defects in (AlGaIn)N by means of positron annihilation and time-resolved photoluminescence techniques ; such recombination centers govern optical properties of the materials. We also used the first-principle calculation to study configuration and electric properties of point defects and band structures at the surface and in the interfaces.
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[Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques2007
Author(s)
S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.Denbaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, T.Sota
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Journal Title
Philosophical Magazine 87
Pages: 2019-2039
Peer Reviewed
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[Presentation] ヨウ化アンモニウムを鉱化剤に用いたアモノサーマル法によるGaN育成2010
Author(s)
鏡谷勇二, 栗林岳人, 羽豆耕治, 尾沼猛儀, 冨田大輔, 志村玲子, 秩父重英, 杉山和正, 横山千昭, 石黒徹, 福田承生
Organizer
第71回応用物理学会学術講演会
Place of Presentation
長崎大学
Year and Date
2010-09-14
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[Book] Advances in Light Emitting Materials(edited by B. Monemar and H.Grimmeiss)("Impact of Point Defects on the Luminescence Properties of (Al,Ga)N", Materials Science Forum 590, pp.233-248(2008) ISBN0-87849-358-1 ISBN-13978-087849-358-6)2008
Author(s)
S.F.Chichibu, A.Uedono, T.Onuma, S.P.DenBaars, U.K.Mishra, J.S.Speck, S.Nakamura
Total Pages
278
Publisher
Trans Tech Publications, Stafa-Zuerich
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