2010 Fiscal Year Final Research Report
Characterization of Nano-Device Structures of InN-based III-nitrides by Extremely Wide Range Spectroscopy
| Project Area | Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential- |
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| Project/Area Number |
18069002
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Chiba University |
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Principal Investigator |
YOSHIKAWA Akihiko Chiba University, 大学院・工学研究科, 教授 (20016603)
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| Co-Investigator(Kenkyū-buntansha) |
ISHITANI Yoshihiro 千葉大学, 大学院・工学研究科, 教授 (60291481)
CHE Songbek 千葉大学, 大学院・工学研究科, 助教 (00361410)
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| Co-Investigator(Renkei-kenkyūsha) |
KUSAKABE Kazuhide 千葉大学, 大学院・工学研究科, 特任准教授 (40339106)
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| Project Period (FY) |
2006 – 2010
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| Keywords | 窒化物半導体 / 窒化インジウム / 極広域分光 / キャリアダイナミクス / 表面・界面物性 / ナノ構造デバイス / MBEエピタキシャル / 超格子 / 擬似混晶 |
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| Research Abstract |
Nitride semiconductors can be applied to optical devices for the wavelength from ultraviolet of about 0.2μm to infrared of about 2μm. For the purpose of the extension of the applicable wavelength range to extremely shorter and longer sides, we have characterized the nanostructure and carrier dynamics, and have obtained the following achievements : (1) success in p-type conductivity and characterization of hole properties, (2) characterization of nonradiative carrier recombination processes of the activation energy and recombination processes both for p and n-type materials, (3) proposal of (InN)_m/(GaN)_n superlattices of "SMART" super-structures for the achievement of high quality pn-junction, and the first fabrication of the superlattice structures.
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