Low temperature growth of InN films by pulsed excitation deposition

2010 Fiscal Year Final Research Report

• Project Area: Optoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
• Project/Area Number: 18069003
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: The University of Tokyo
• Principal Investigator: FUJIOKA Hiroshi The University of Tokyo, 生産技術研究所, 教授 (50282570)
• Co-Investigator(Renkei-kenkyūsha): OHTA Jitsuo 東京大学, 生産技術研究所, 助教 (60392924)
• Project Period (FY): 2006 – 2010
• Keywords: III族窒化物 / パルス励起堆積法 / 低温成長

Research Abstract

We have developed a pulsed excitation deposition (PXD) technique for a low-temperature growth of InN-related semiconductors. We have succeeded in the growth of high quality InN, InAlN, and InGaN films by the use of PXD low-temperature growth. It was also found that it is possible to grow n-and p-type nitride films and to form a hetero-junction with an atomically flat interface by PXD. Fabrication of nitride-based devices such as light emitting diodes was demonstrated. These results indicate that the PXD low-temperature growth is suitable for the fabrication of InN-based optical and electronic devices.

Research Products

• [Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates (2010)
  • Author(s): A.Kobayashi, K.Shimomoto, J.Ohta, H.Fujioka, M.Oshima
  • Journal Title: Phys.Status Solidi (RRL) 4 Pages: 188
  • Peer Reviewed
• [Journal Article] Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates (2010)
  • Author(s): T.Fujii, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
  • Journal Title: Jpn.J.Appl.Phys. 49 Pages: 080204
  • Peer Reviewed
• [Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers (2010)
  • Author(s): K.Shimomoto, A.Kobayashi, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
  • Journal Title: Appl.Phys.Exp. 3 Pages: 061001
  • Peer Reviewed
• [Journal Article] Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition (2010)
  • Author(s): K.Shimomoto, A.Kobayashi, K.Mitamura, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
  • Journal Title: Jpn.J.Appl.Phys. 49 Pages: 080202
  • Peer Reviewed
• [Journal Article] Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition (2010)
  • Author(s): T.Fujii, A.Kobayashi, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
  • Journal Title: Appl.Phys.Exp. 3 Pages: 021003
  • Peer Reviewed
• [Journal Article] Fabrication and Characterization of AlN/InN Heterostructures (2009)
  • Author(s): T.Fujii, K.Shimomoto, R.Ohba, Y.Toyoshima, K.Horiba, J.Ohta, H.Fujioka, M.Oshima, S.Ueda, H.Yoshikawa, K.Kobayashi
  • Journal Title: Appl Phys.Exp. 2 Pages: 011002
  • Peer Reviewed
• [Journal Article] Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition (2009)
  • Author(s): R.Ohba, J.Ohta, K.Shimomoto, T.Fujii, K.Okamoto, A.Aoyama, T.Nakano, A.Kobayashi, H.Fujioka, M.Oshima
  • Journal Title: J.Solid State Chemistry 182 Pages: 2887
  • Peer Reviewed
• [Journal Article] Low-temperature growth of high quality AlN films on carbon face 6H-SiC (2008)
  • Author(s): M.-H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
  • Journal Title: Physica Status Solidi - Rapid Research Letters 2 Pages: 13
  • Peer Reviewed
• [Journal Article] Epitaxial growth mechanisms of AlN on SiC substrates at room temperature (2007)
  • Author(s): M.H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
  • Journal Title: Appl.Phys.Lett. 91 Pages: 151903
  • Peer Reviewed
• [Presentation] Future large area nitride devices fabricated with low temperature PXD process (2010)
  • Author(s): Hiroshi Fujioka
  • Organizer: The International Workshop on Nitride semiconductors 2010(Invited)
  • Place of Presentation: U.S.A
  • Year and Date: 2010-09-21
• [Presentation] Growth Orientation Control of InN by Pulsed Excitation Deposition (2010)
  • Author(s): Hiroshi Fujioka
  • Organizer: Electronic Materials Conference(Invited)
  • Place of Presentation: U.S.A
  • Year and Date: 2010-06-25
• [Presentation] Feasibility study on Future large area nitride devices (2010)
  • Author(s): Hiroshi Fujioka
  • Organizer: The European Workshop on Compound Semiconductor Devices and Integrated Circuits(Invited)
  • Place of Presentation: Germany
  • Year and Date: 2010-05-17