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2010 Fiscal Year Final Research Report

Thick epitaxial growth of AlN and AlGaN by using controlling molecules of source precursors

Planned Research

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Project AreaOptoelectronics Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor Material Potential-
Project/Area Number 18069004
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOUKITU Akinori  Tokyo University of Agriculture and Technology, 大学院・工学研究院, 教授 (10111626)

Co-Investigator(Kenkyū-buntansha) KUMAGA Yoshinao  東京農工大学, 大学院・工学研究院, 准教授 (20313306)
MURAKAMI Hajime  東京農工大学, 大学院・工学研究院, 助教 (90401455)
Project Period (FY) 2006 – 2010
Keywords窒化物半導体 / 厚膜エピタキシー / 自立基板結晶 / Al系窒化物 / 原料分子制御法 / HVPE成
Research Abstract

In this project, we have researched the growth of the high-quality and thick epitaxial layer of the group III nitrides by using a new HVPE growth method with controlling the molecules of source precursors. For Al-related nitrides, the molecule which doesn't react with quartz reactor was used and for In-related nitrides, the molecule which has a large formation energy of InN was used. As a result, we succeeded the growth of the high-quality and thick epitaxial layers of AlN, AlGaN and InN.

  • Research Products

    (18 results)

All 2011 2010 2009 2008 2007 Other

All Journal Article (7 results) (of which Peer Reviewed: 7 results) Presentation (7 results) Book (3 results) Remarks (1 results)

  • [Journal Article] Carrier Gas Dependence at Initial Processes for a-Plane AlN Growth on r-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2011

    • Author(s)
      Jumpei Tajima, Chikashi Echizen, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
    • Journal Title

      Jpn., J.Appl.Phys. 50

      Pages: 055501-1-055501-5

    • Peer Reviewed
  • [Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlNlayers grown by HVPE2010

    • Author(s)
      Yoshinao Kumagai, Yuuki Enatsu, Masanari Ishizuki, Yuki Kubota, Jumpei Tajima, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
    • Journal Title

      J.Cryst.Growth 312

      Pages: 2530-2536

    • Peer Reviewed
  • [Journal Article] Influence of substrate polarity of (0001) and (0001)GaN surfaces on hydride vapor-phase epitaxy of InN2010

    • Author(s)
      Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
    • Journal Title

      J.Cryst.Growth 312

      Pages: 651-655

    • Peer Reviewed
  • [Journal Article] Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire2008

    • Author(s)
      Yoshinao Kumagai, Jumpei Tajima, Masanari Ishizuki, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
    • Journal Title

      Appl.Phys.Express 1

      Pages: 045003-1-045003-3

    • Peer Reviewed
  • [Journal Article] HVPE growth of AlxGa1-xN ternary alloy using AlCl3 and GaCl2007

    • Author(s)
      Akinori Koukitu, Fumitaka Satoh, Takayoshi Yamane, Hisashi Murakami, Yoshinao Kumagai
    • Journal Title

      J.Cryst.Growth 305

      Pages: 335-339

    • Peer Reviewed
  • [Journal Article] Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230℃ Using (111)Si as a Starting Substrate2007

    • Author(s)
      Yoshinao Kumagai, Toru Nagashima, Akinori Koukitu
    • Journal Title

      Jpn.J.Appl.Phys. 46

      Pages: L389-L391

    • Peer Reviewed
  • [Journal Article] Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl22007

    • Author(s)
      Yoshinao Kumagai, Jun Kikuchi, Yuuki Nishizawa, Hisashi Murakami, Akinori Koukitu
    • Journal Title

      J.Cryst.Growth 300

      Pages: 57-61

    • Peer Reviewed
  • [Presentation] Self epitaxial lateral overgrowth of HVPE-AlN layers on 6H-SiC(0001) substrates by the intentional formation of non c-axis oriented AlN grains2011

    • Author(s)
      H.Murakami, S.Sekiguchi, M.Ishizuki, R.Togashi, K.Takada, Y.Kumagai, A.Koukitu
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII) S3-4
    • Place of Presentation
      Koyasan, Wakayama, Japan 招待講演
    • Year and Date
      2011-06-16
  • [Presentation] Formation of AlN on sapphire surface by high temperature heating in the mixed flow of H2 and N22011

    • Author(s)
      Y.Kumagai, T.Igi, M.Ishizuki, R.Togashi, H.Murakami, K.Takada, A.Koukitu
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII) S3-6
    • Place of Presentation
      Koyasan, Wakayama, Japan 招待講演
    • Year and Date
      2011-03-16
  • [Presentation] Control of in-plane Epitaxial Relationship of c-plane AlN Layers Grown on a-plane Sapphire Substrates by Hydride Vapor Phase Epitaxy2010

    • Author(s)
      Jumpei Tajima, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, Akinori Koukitu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN2010) A1.8
    • Place of Presentation
      Tampa, FL, U.S.A. 口頭発表
    • Year and Date
      2010-09-22
  • [Presentation] Growth of InN Films by Hydride Vapor Phase Epitaxy2010

    • Author(s)
      Yoshinao Kumagai, Rie Togashi, Hisashi Murakami, Akinori Koukitu
    • Organizer
      The 16th International Conference on Crystal Growth in Conjunction with The 14th International Conference on Vapor Growth and Epitaxy (ICCG-16/ICVGE-14) DK1
    • Place of Presentation
      Beijing, China 招待講演
    • Year and Date
      2010-08-12
  • [Presentation] In situ gravimetric monitoring of hydrogen etching rates of GaN, sapphire and SiC2010

    • Author(s)
      Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
    • Organizer
      The 16th International Conference on Crystal Growth in Conjunction with The 14th International Conference on Vapor Growth and Epitaxy (ICCG-16/ICVGE-14)
    • Place of Presentation
      Beijing, China 基調講演
    • Year and Date
      2010-08-09
  • [Presentation] Hydride Vapor Phase Epitaxy of AlN at High Temperatures on Freestanding (0001)AlN Substrates2010

    • Author(s)
      Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
    • Organizer
      2010 International Conference on Indium Phosphide and Related Materials (22nd IPRM) WeB3-3
    • Place of Presentation
      Kagawa, Japan 口頭発表
    • Year and Date
      2010-06-02
  • [Presentation] Progress in Preparation of Freestanding AlN Substrates by Hydride Vapor Phase Epitaxy2008

    • Author(s)
      Y.Kumagai, J.Tajima, Y.Kubota, M.Ishizuki, R.Togashi, H.Murakami, T.Nagashima, K.Takada, A.Koukitu
    • Organizer
      International Workshop on Nitride Semiconductors 2008 (IWN2008) We2b-C1
    • Place of Presentation
      Montreux Music and Convention Center, Montreux, Switzerland 招待講演
    • Year and Date
      2008-10-08
  • [Book] Technology of Gallium Nitride Crystal Growth Hydride Vapor Epitaxy of GaN2010

    • Author(s)
      A. Koukitu, Y. Kumagai
    • Total Pages
      31-60
    • Publisher
      Springer
  • [Book] Springer Handbook of Crystal Growth2010

    • Author(s)
      Carl Hemmingsson, Bo Monemar, Yoshinao Kumagai, Akinori Koukitu
    • Total Pages
      869-896
    • Publisher
      Springer
  • [Book] 熱力学解析による化合物半導体の気相成長 第79巻,第11号2009

    • Author(s)
      纐纈明伯, 熊谷義直
    • Total Pages
      972-978
    • Publisher
      金属
  • [Remarks] ホームページ等

    • URL

      http://epitcs.chem.tuat.ac.jp/

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Published: 2012-02-13   Modified: 2016-04-21  

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